IRLB3813 ,30V Single N-Channel HEXFET Power MOSFET in a TO-220AB packageApplicationsV R maxQg (typ.)DSS DS(on) High Frequency Isolated DC-DC1.95m @V = 10V30V Ω 57nCGS C ..
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IRLD014 ,60V Single N-Channel HEXFET Power MOSFET in a HEXDIP packageInternational
TOR Rectifier,
HEXFET® Power MOSFET
0 Dynamic dv/dt Rating
. For Automatic ..
IRLD024 ,60V Single N-Channel HEXFET Power MOSFET in a HEXDIP packageintetttaati9!?al
TOR Rectifier
HEXFET® Power MOSFET
q Dynamic dv/dt Rating
0 For Automatic ..
IRLD024 ,60V Single N-Channel HEXFET Power MOSFET in a HEXDIP packageintetttaati9!?al
TOR Rectifier
HEXFET® Power MOSFET
q Dynamic dv/dt Rating
0 For Automatic ..
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IRLB3813
30V Single N-Channel HEXFET Power MOSFET in a TO-220AB package
PD - 97407
International
TOR Rectifier IRLB3813PbF
Applications HEXFET® Power MOSFET
o OptimizedforUPS/InverterApplications V R max Q t
0 High Frequency Isolated DC-DC DSS DS(on) g ( yp0
Converters with Synchronous Rectification 30V 1'95mQ@VGS = 10V 57nC
for Telecom and Industrial Use
0 Power Tools D, .
Benefits "N ', . s
0 Very Low Rosmn) at 4.5V VGS 'GD
q Ultra-Low Ga/e.lmptdan.ce T O-220 AB
o Fully Characterized Avalanche Voltage
and Current
. Lead-Free
Gate Drain Source
Absolute Maximum Ratings
Parameter Max. Units
VDS Drain-to-Source Voltage 30 V
VGS Gate-to-Source Voltage t 20
ID @ To = 25°C Continuous Drain Current, l/ss @ 10V 2606)
ID © TC = 100°C Continuous Drain Current, Vas @ 10V 190© A
IDM Pulsed Drain Current CO 1050
PD @Tc = 25°C Maximum Power Dissipation s 230 W
PD @Tc = 100°C Maximum Power Dissipation S 120
Linear Derating Factor 1.6 W/°C
TJ Operating Junction and -55 to + 175
TSTG Storage Temperature Range °C
Soldering Temperature, for 10 seconds 300 (1.6mm from case)
Mounting torque, 6-32 or M3 screw 10lb.in (1 .1N-m)
Thermal Resistance
Parameter Typ. Max. Units
Redo Junction-to-Case s - 0.64
Recs Case-to-Sink, Flat Greased Surface 0.50 - °C/W
Ro, Junction-to-Ambient © - 62
Notes OD through © are on page 9
1
07/03/09
IRLl338'13PbF
International
TOR Rectifier
Static © T, = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
BVDSS Drain-to-Source Breakdown Voltage 30 - - V Vss = 0V, ID = 250PA
ABVDSS/ATJ Breakdown Voltage Temp. Coefficient - 11 - mV/°C Reference to 25°C, lo = 1.0mA
RDS(on) Static Drain-to-Source On-Resistance - 1.60 1.95 mg Ves = 10V, ID = 60A oo
- 2.00 2.60 Vas = 4.5V, ID = 48A ©
VGS(th) Gate Threshold Voltage 1.35 1.90 2.35 V Vos = Vas, ID = 150pA
AN/sam/ATO Gate Threshold Voltage Coefficient - -7.8 - mV/°C
loss Drain-to-Source Leakage Current - - 1.0 pA Vos = 24V, Vas = 0V
- - 100 Vos = 24V, Vas = 0V, T, = 125°C
less Gate-to-Source Forward Leakage - - 100 nA Vss = 20V
Gate-to-Source Reverse Leakage - - -100 Ves = -20V
gfs Forward Transconductance 140 -- -- S Vos = 15V, ID = 48A
Qg Total Gate Charge - 57 86
0951 Pre-Vth Gate-to-Source Charge - 16 - Vos = 15V
Qgsz Post-Vth Gate-to-Source Charge - 6.7 - nC Vss = 4.5V
di Gate-to-Drain Charge - 19 - ID = 48A
ngdr Gate Charge Overdrive - 15 - See Fig. 16
st Switch Charge (0952 + di) - 25.7 _
Qoss Output Charge - 35 - nC Vos = 16V, Vas = 0V
Re Gate Resistance - 0.87 1.3 Q
tam) Turn-On Delay Time - 36 - VDD = 15V, Vss = 4.5V©
t, Rise Time - 170 - ns ID = 48A
td(off) Turn-Off Delay Time -- 33 - Rs = 1.89
t, Fall Time -- 60 -- See Fig. 14
Ciss Input Capacitance - 8420 --.- Vos = 0V
Coss Output Capacitance - 1620 - pF Vos = 15V
Crss Reverse Transfer Capacitance - 650 - f = 1.0MHz
Avalanche Characteristics
Parameter Typ. Max. Units
EAS Single Pulse Avalanche Energy© _ 520 mJ
IAR Avalanche Current LO _ 48 A
Diode Characteristics
Parameter Min. Typ. Max. Units Conditions
ls Continuous Source Current - - 2606) MOSFET symbol D
(Body Diode) A showing the Lt
ISM Pulsed Source Current - - 1050 integral reverse G c,
(Body Diode) Ci) p-n junction diode. R
Vso Diode Forward Voltage - - 1.0 V To = 25°C, Is = 48A, VGS = 0V ©
trr Reverse Recovery Time - 24 36 ns T J = 25°C, IF = 48A, VDD = 15V
l Reverse Recovery Charge -- 22 33 nC di/dt = 244A/ps ©
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