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TOR Rectifier,
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0 Dynamic dv/dt Rating
. For Automatic ..
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IRLB3034PBF
40V Single N-Channel HEXFET Power MOSFET in a TO-220AB package
PD -97363
IlRLl33034PbF
HEXFETID Power MOSFET
International
Tait Rectifier
Applications
. lc 1opr.Drive . . . . D Voss 40V
: 'Cingi2E,fttl"g Synchronous Rectification m SMPS RDS(on) typ. 1.4mf2
ptible Power Supply
q High Speed Power Switching G max. 1.7mf2
. Hard Switched and High Frequency Circuits In (Silicon Limited) 343ACO
s ID (Package Limited) 195A
Benefits
. Optimized for Logic Level Drive
. Very Low RDS(ON) at 4.5V VGS
. Superior R*Q at 4.5V VGS
. Improved Gate, Avalanche and Dynamic dV/dt
Ruggedness
. Fully Characterized Capacitance and Avalanche
TO-220AB
SOA FLB3034PbF
0 Enhanced body diode dV/dt and dI/dt Capability
o Lead-Free
Gate Drain Source
Absolute Maximum Ratings
Symbol Parameter Max. Units
Ir, @ Tc = 25°C Continuous Drain Current, l/ss @ 10V (Silicon Limited) 343CO
Ir, @ To = 100°C Continuous Drain Current, N/es @ 10V (Silicon Limited) 243 C) A
Ir) @ Ts = 25°C Continuous Drain Current, Vss @ 10V (Package Limited) 195
Mm Pulsed Drain Current O) 1372
PD @Tc = 25°C Maximum Power Dissipation 375 W
Linear Derating Factor 2.5 W/°C
Vas Gate-to-Source Voltage t20 V
dv/dt Peak Diode Recovery GD 4.6 V/ns
Tu Operating Junction and -55 to + 175
TSTG Storage Temperature Range =
Soldering Temperature, for 10 seconds 300
(1.6mm from case)
Mounting torque, 6-32 or M3 screw 10lbf-in (1.1N-m)
Avalanche Characteristics
EAS (Thermallylimited) Single Pulse Avalanche Energy © 255 mJ
IAR Avalanche Current © . A
EAR Repetitive Avalanche Energy © See Fig. 14, 15, 22a, 22b, mJ
Thermal Resistance
Symbol Parameter Typ. Max. Units
ReJC Junction-to-Case - 0.4
Recs Case-to-Sink, Flat, Greased Surface 0.5 - °C/W
RQJA Junction-to-Ambient - 62
1
01/14/09
IRLB3034PbF
International
TOR Rectifier
Static @ Tu = 25°C (unless otherwise specified)
Symbol Parameter Min. Typ. Max. Units Conditions
V(Bmss Drain-to-Source Breakdown Voltage 40 - - V Vss = 0V, ID = 250pA
AV(BR)DSS/ATJ Breakdown Voltage Temp. Coefficient - 0.04 - V/°C Reference to 25°C, ID = 5mA©
. . . - 1.4 1.7 1a=10V,lo--195ACr)
RDSW) Static Drain-to-Source On-Resistance - 1.6 2.0 mo Vss = 4.5V, l, = 172A ©
VGSM Gate Threshold Voltage 1.0 - 2.5 V Vos = Vas, ID = 250pA
|DSS Drain-to-Source Leakage Current - 20 Vos = 40V, Vas = 0V
- - 250 pA Vos = 40v, Vss = OV, TJ = 125°C
less Gate-to-Source Forward Leakage - - 100 Vss = 20V
Gate-to-Source Reverse Leakage - -100 nA I/ss = -20V
Rem) Internal Gate Resistance - 2.1 - n
Dynamic © T J = 25°C (unless otherwise specified)
Symbol Parameter Min Typ. Max. Units Conditions
gfs Forward Transconductance 286 - - S Vos = 10V, ID = 195A
A Total Gate Charge - 108 162 ID = 185A
Qgs Gate-to-Source Charge - 29 - Vos = 20V
di Gate-to-Drain ("Miller") Charge - 54 - nC Vss = 4.5V G)
stc Total Gate Charge Sync. (Q, - di) - 54 - ID = 185A, Vos =0V, Vas = 4.5V
tom Turn-On Delay Time - 65 - VDD = 26V
t, Rise Time - 827 - ID = 195A
tom Turn-Off Delay Time - 97 - ns Rs = 2.19
t, Fall Time - 355 - I/ss = 4.5V s
Ciss Input Capacitance - 10315 - Vas = 0V
Coss Output Capacitance - 1980 - VDS = 25V
Crss Reverse Transfer Capacitance - 935 - pF f = 1.0MHz
Coss eff. (ER) Effective Output Capacitance (Energy Related)© - 2378 - I/ss = 0V, Vos = 0V to 32V ©
Cu, eff. (TR) Effective Output Capacitance (Time Related) © - 2986 - l/ss = 0V, VDs = 0V to 32V ©
Diode Characteristics
Symbol Parameter Min Typ. Max. Units Conditions
ls Continuous Source Current - - 3430D MOSFET symbol D
(Body Diode) showing the
ISM Pulsed Source Current - - A integral reverse G
. 1372 . . .
(Body Diode) © p-n junction diode. S
VSD Diode Forward Voltage - - 1.3 v Tu = 25°C, ls = 195A, vGS = OV s
tr, Reverse Recovery Time - 39 - T J = 25°C VR = 34V,
- 41 - ns Tu = 125°C |F=195A
Q,, Reverse Recovery Charge - 39 - Tu = 25°C di/dt = 100NUS co
_ 46 - nC TJ = 125°C
IRRM Reverse Recovery Current - 1.7 - A Tu = 25°C
ton Forward Turn-On Time Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Notes:
(D Calcuted continuous current based on maximum allowable junction
temperature Bond wire current limit is 195A. Note that current
limitation arising from heating of the device leds may occur with
some lead mounting arrangements.
© Repetitive rating; pulse width limited by max. junction
temperature.
© Limited by TJmax, starting Tu = 25°C, L = 0.013mH
Rs = 259, IAS = 195A, VGs =1OV. Part not recommended for use
above this value .
(d) Iso S 195A, di/dt S MIA/ps, VDD S V(snvss, Tu f 175°C.
© Pulse width s: 400ps; duty cycle I 2%.
co cus eff. (TR) is a fixed capacitance that gives the same charging time
as Coss while Vos is rising from 0 to 80% Voss.
© Coss eff. (ER) is a fixed capacitance that gives the same energy as
Coss while VDs is rising from O to 80% Voss.
Ro is measured at Tu approximately 90°C
