IRL8113PBF ,30V Single N-Channel HEXFET Power MOSFET in a TO-220AB packageApplicationsHEXFET Power MOSFET High Frequency Synchronous Buck Converters for Computer Proces ..
IRL8113S ,30V Single N-Channel HEXFET Power MOSFET in a D2Pak package IRL8113IRL8113SIRL8113L
IRL8113SPBF ,30V Single N-Channel HEXFET Power MOSFET in a D2Pak packageIRL8113PbFIRL8113SPbFIRL8113LPbF
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IRL8113PBF-IRL8113SPBF
30V Single N-Channel HEXFET Power MOSFET in a TO-262 package
PD - 95582
International IRL8113PbF
ISER Rectifier |RL8113SPbF
IRL8113LPbF
Applications HEXFET@ Power MOSFET
o High Frequency Synchronous Buck
Converters for Computer Processor Power Voss RDS(on) max Qg (Typ.)
o Lead-Free 30V 6.0mQ 23nC
Benefits $, - $9 'git,
. Low RDS(on) at 4.5V VGS \;:; "ii-'j'it'it 'Rie' V
q Low Gate Charge ‘\ .- l l,
o Fully Characterized Avalanche Voltage .
and Current TO-220AB D2Pak TO-262
IRL8113 IRL8113S IRL8113L
Absolute Maximum Ratings
Parameter Max. Units
Vos Drain-to-Source Voltage 30 V
VGS Gate-to-Source Voltage i 20
ID @ Tc = 25°C Continuous Drain Current, VGS @ 10V 105 © A
ID @ Tc = 100°C Continuous Drain Current, Vss @ 10V 74 ©
IOM Pulsed Drain Current CD 420
PD @Tc = 25°C Maximum Power Dissipation 110 W
PD @Tc = 100°C Maximum Power Dissipation 57
Linear Derating Factor 0.76 W/°C
TJ Operating Junction and -55 to + 175 ''C
TSTG Storage Temperature Range
Soldering Temperature, tor 10 seconds 300 (1.6mm from case)
Mounting Torque, 6-32 or M3 screw © 10 lbf-in (1.1N-m)
Thermal Resistance
Parameter Typ. Max. Units
RoJc Junction-to-Case co - 1.32 °C/W
Rocs Case-to-Sink, Flat Greased Surface © 0.50 -
ROJA Junction-to-Ambient ©© - 62
ROJA Junction-to-Ambient (PCB Mount) SO) - 40
Notes OD through (D are on page 12
1
07/20/04
IIRL8rl3/S/LPbF
International
TOR Rectifier
Static @ T J = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
BVDss Drain-to-Source Breakdown Voltage 30 - - V VGS = 0V, ID = 250PA
ABVDss/ATJ Breakdown Voltage Temp. Coefhcient - 0.020 - V/°C Reference to 25°C, ID = 1mA
RDS(on) Static Drain-to-Source On-Resistance - 4.8 6.0 m9 Vss = 10V, ID = 21A ©
- 5.7 7.1 VGS=4.5V, ID=17A®
VGsah) Gate Threshold Voltage 1.35 2.25 v Vos = VGS, ID = 250PA
AVGS(th)/ATJ Gate Threshold Voltage CoefMient - -5.0 - mW'C
loss Drain-to-Source Leakage Current - - 1.0 pA Vos = 24V, N/ss = 0V
- - 150 I/os = 24V, VGS = 0V, T, = 125°C
less Gate-to-Source Forward Leakage - - 100 nA Vss = 20V
Gate-to-Source Reverse Leakage - - -100 VGS = -20V
gfs Forward Transconductance 86 - - S Vos = 15V, ID = 17A
q, Total Gate Charge - 23 35
0951 Pre-Vth Gate-to-Source Charge - 6.0 - Vos = 15V
Qgs2 Post-Vth Gate-to-Source Charge - 2.0 - nC VGS = 4.5V
di Gate-to-Drain Charge - 8.3 - ID = 17A
ngdr Gate Charge Overdrive - 6.7 - See Fig. 16
st Switch Charge (Qgsg + di) - 10 -
Qoss Output Charge - 14 - nC Ws = 16V, VGs = 0V
td(on) Turn-On Delay Time - 14 - Von = 15V, VGS = 4.5V ©
t, Rise Time - 38 - ID = 17A
lam) Turn-Off Delay Time - 18 - ns Clamped Inductive Load
tr Fall Time - 5.0 -
Ciss Input Capacitance - 2840 - VGS = 0V
Coss Output Capacitance - 620 - pF Vos = 15V
Crss Reverse Transfer Capacitance - 290 - f = 1.0MHz
Avalanche Characteristics
Parameter
urrent
epe va
Diode Characteristics
Parameter Min. Typ. Max. Units Conditions
ls Continuous Source Current - - 105 © MOSFET symbol a
(Body Diode) A showing the
ISM Pulsed Source Current - - 420 integral reverse G
(Body Diode) © p-n junction diode. s
Vso Diode Forward Voltage - - 1.0 V Tu = 25°C, Is = 17A, VGS = 0V ©
in Reverse Recovery Time - 18 27 ns To = 25°C, IF = 17A, VDD = 15V
er Reverse Recovery Charge - 7.2 11 nC di/dt = 100A/ps OD
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