IRL8113S ,30V Single N-Channel HEXFET Power MOSFET in a D2Pak package IRL8113IRL8113SIRL8113L
IRL8113SPBF ,30V Single N-Channel HEXFET Power MOSFET in a D2Pak packageIRL8113PbFIRL8113SPbFIRL8113LPbF
IRLB3034PBF ,40V Single N-Channel HEXFET Power MOSFET in a TO-220AB packageApplicationsDDC Motor DriveV 40VDSSHigh Efficiency Synchronous Rectification in SMPSR typ.1 ..
IRLB3036PBF ,60V Single N-Channel HEXFET Power MOSFET in a TO-220AB packageApplicationsDDC Motor DriveV 60VDSSHigh Efficiency Synchronous Rectification in SMPSR typ.1 ..
IRLB3813 ,30V Single N-Channel HEXFET Power MOSFET in a TO-220AB packageApplicationsV R maxQg (typ.)DSS DS(on) High Frequency Isolated DC-DC1.95m @V = 10V30V Ω 57nCGS C ..
IRLBA3803P ,30V Single N-Channel HEXFET Power MOSFET in a Super 220 (TO-273AA) packageapplications, reduce system power dissipation,upgrade existing designs or have TO-247 performance i ..
ISPGAL22V10C-15LJ , In-System Programmable E2CMOS PLD
ISPGAL22V10C-7LJ , In-System Programmable E2CMOS PLD
ISPGDS14-7P , in-system programmable Generic Digital SwitchTM
ISPGDX120A-5T176 , In-System Programmable Generic Digital CrosspointTM
ISPGDX120A-7T176 , In-System Programmable Generic Digital CrosspointTM
ISPGDX160A-5Q208 , In-System Programmable Generic Digital CrosspointTM
IRL8113-IRL8113S
30V Single N-Channel HEXFET Power MOSFET in a TO-220AB package
International
TOR Rectifier
PD - 95821
lRL8113
IRL8113S
IRL8113L
Applications HEXFET0 Power MOSFET
q High Frequency Synchronous Buck
Converters for Computer Processor Power Voss RDS(on) max Qg (Typ.)
30V 6.0mQ 23nC
Benefits [ r _;iiii,
0 Low RDS(on) at 4.5V VGS "i5il'; ‘x G"
o Low Gate Charge "s, ' _
q Fully Characterized Avalanche Voltage .
and Current TO-220AB D2Pak TO-262
IRL8113 IRL8113S IRL8113L
Absolute Maximum Ratings
Parameter Max. Units
Vos Drain-to-Source Voltage 30 V
VGS Gate-to-Source Voltage , 20
ID @ Tc = 25°C Continuous Drain Current, VGS @ 10V 105 © A
ID @ Tc = 100°C Continuous Drain Current, I/ss @ 10V 74 co
IBM Pulsed Drain Current C) 420
PD @Tc = 25°C Maximum Power Dissipation 110 W
PD @Tc = 100°C Maximum Power Dissipation 57
Linear Derating Factor 0.76 W/°C
T J Operating Junction and -55 to + 175 ''C
TSTG Storage Temperature Range
Soldering Temperature, for 10 seconds 300 (1.6mm from case)
Mounting Torque, 6-32 or M3 screw © 10 lbf-in (1.1N-m)
Thermal Resistance
Parameter Typ. Max. Units
ROJC Junction-to-Case © - 1.32 °C/W
Rocs Case-to-Sink, Flat Greased Surface © 0.50 -
ROJA Junction-to-Ambient (TOD - 62
ROJA Junction-to-Ambient (PCB Mount) S© - 40
Notes OD through co are on page 12
1
1/6/04
|RL8113/S/L
Static © T J = 25°C (unless otherwise specified)
International
TOR ilectifier
Parameter Min. Typ. Max. Units Conditions
BVDSS Drain-to-Source Breakdown Voltage 30 - - V VGS = 0V, ID = 250PA
ABVDss/ATJ Breakdown Voltage Temp. Coemcient - 0.020 - V/°C Reference to 25°C, ID = 1mA
RDS(on) Static Drain-to-Source On-Resistance - 4.8 6.0 mn Vss = 10V, ID = 21A ©
- 5.7 7.1 Vss = 4.5V, ID = 17A ©
VGS(th) Gate Threshold Voltage 1.35 2.25 V Vos = VGS, ID = 250pA
AVGS(th)/ATJ Gate Threshold Voltage Coetrtcient - -5.0 - mV/°C
loss Drain-to-Source Leakage Current - - 1.0 pA Vos = 24V, I/ss = 0V
- - 150 Vos = 24V, VGS = 0V, TJ = 125°C
less Gate-to-Source Forward Leakage - - 100 nA Vss = 20V
Gate-to-Source Reverse Leakage - - -100 Vss = -20V
gfs Forward Transconductance 86 - - S Vos = 15V, ID = 17A
A Total Gate Charge - 23 35
Qgs1 Pre-Vth Gate-to-Source Charge - 6.0 - Vos = 15V
Qgsz Post-Vth Gate-to-Source Charge - 2.0 - nC VGS = 4.5V
an Gate-to-Drain Charge - 8.3 - ID = 17A
ngdr Gate Charge Overdrive - 6.7 - See Fig. 16
st Switch Charge (Qgs2 + di) - 10 -
Qoss Output Charge - 14 - nC Vos = 16V, I/ss = OV
td(on) Turn-On Delay Time - 14 - VDD = 15V, Ves = 4.5V ©
t, Rise Time - 38 - ID = 17A
td(off) Turn-Off Delay Time - 18 - ns Clamped Inductive Load
t, Fall Time - 5.0 -
Ciss Input Capacitance - 2840 - VGS = 0V
C055 Output Capacitance - 620 - pF Vos = 15V
Crss Reverse Transfer Capacitance - 290 - f = 1.0MHz
Avalanche Characteristics
Parameter
Diode Characteristics
Parameter Min. Typ. Max. Units Conditions
ls Continuous Source Current - - 105 © MOSFET symbol D
(Body Diode) A showing the
ISM Pulsed Source Current - - 420 integral reverse G
(Body Diode) (D p-n junction diode. S
Vso Diode Forward Voltage - - 1.0 V To = 25°C, ls = 17A, VGS = 0V ©
trr Reverse Recovery Time - 18 27 ns TJ = 25''C, IF = 17A, VDD = 15V
Cr, Reverse Recovery Charge - 7.2 11 nC di/dt = 100A/ps ©
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