IRL7833 ,30V Single N-Channel HEXFET Power MOSFET in a TO-220AB package IRL7833IRL7833SIRL7833L
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IRL7833 -IRL7833L-IRL7833S
30V Single N-Channel HEXFET Power MOSFET in a TO-220AB package
International
TOR Rectifier
Applications
o High Frequency Synchronous Buck
PD - 94668B
IRL7833
IRL7833S
IRL7833L
HEXFET© Power MOSFET
Converters for Computer Processor Power VDSS RDSion) max tity
q High Frequency Isolated DC-DC 30V 3.8mf2 32nC
Converters with Synchronous Rectification
for Telecom and Consumer Use
Benefits , 'i'liiiiih
q Very Low RDS(on) at 4.5V l/GS "R,)'; '", Cs",
o Ultra-Low Gate Impedance \. '.'
0 Fully Characterized Avalanche Voltage
and Current TO-220AB D2Pak T 0-262
IRL7833 IRL7833S IRL7833L
Absolute Maximum Ratings
Parameter Max. Units
Vos Drain-to-Source Voltage 30 V
VGS Gate-to-Source Voltage 1: 20
ID @ TC = 25°C Continuous Drain Current, VGS @ 10V 150©
ID @ Tc = 100°C Continuous Drain Current, Vss @ 10V 110(9 A
Kon, Pulsed Drain Current (D 600
Po @Tc = 25°C Maximum Power Dissipation © 140 W
PD @Tc = 100°C Maximum Power Dissipation © 72
Linear Derating Factor 0.96 W/°C
T J Operating Junction and -55 to + 175 °C
TSTG Storage Temperature Range
Mounting Torque, 6-32 or M3 screw 10 lbPin (1 .1N'm)
Thermal Resistance
Parameter Typ. Max. Units
ROJC Junction-to-Case - 1.04
Rocs Case-to-Sink, Flat, Greased Surface © 0.50 _ °C/W
ROJA Junction-to-Ambient © - 62
ROJA Junction-to-Ambient (PCB Mount) s - 40
Notes OD through © are on page 12
1
4/22/04
IRL7833/S/L International
TOR Rectifier
Static @ To = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
BVDSS Drain-to-Source Breakdown Voltage 30 - - V Vss = 0V, ID = 250pA
ABN/oss/AT: Breakdown Voltage Temp. Coefficient - 18 - mV/°C Reference to 25°C, ID = 1mA
RDS(on) Static Drain-to-Source On-Resistance - 3.1 3.8 mn VGS = 10V, b = 38A ©
- 3.7 4.5 Vss = 4.5V, ID = 30A ©
VGS(lh) Gate Threshold Voltage 1.4 - 2.3 V Vos = VGs, ID = 250pA
AVGS(1h)/ATJ Gate Threshold Voltage Coefficient - -11 - mV/°C
loss Drain-to-Source Leakage Current - - 1.0 pA Vos = 24V, VGS = 0V
- - 150 Vos = 24V, N/ss = ov, T: = 125°C
less Gate-to-Source Forward Leakage - - 100 nA VGS = 20V
Gate-to-Source Reverse Leakage - - -100 Vss = -20V
gfs Forward Transconductance 150 - - S Vos = 15V, ID = 30A
Qg Total Gate Charge - 32 47
0951 Pre-Vth Gate-to-Source Charge - 8.7 - Vos = 16V
Qgs2 Post-N/th Gate-to-Source Charge - 5.1 - nC VGS = 4.5V
di Gate-to-Drain Charge - 13 - ID = 30A
ngdr Gate Charge Overdrive - 5.3 - See Fig. 16
st Switch Charge (Qgs2 + di) - 18 -
Qoss Output Charge - 22 - nC Vos = 16V, Ves = 0V
td(on) Turn-On Delay Time - 18 - VDD = 15V, I/ss = 4.5V Cr)
t, Rise Time - 50 - ns ID = 26A
td(off) Turn-Off Delay Time - 21 - Clamped Inductive Load
tr Fall Time - 6.9 -
Ciss Input Capacitance - 4170 - VGS = 0V
Coss Output Capacitance - 950 - pF Vos = 15V
Crss Reverse Transfer Capacitance - 470 - f = 1.0MHz
Avalanche Characteristics
Parameter . Max.
EAS ng se va 560
IAR va 30
EAR 14
Diode Characteristics
Parameter Min. Typ. Max. Units Conditions
ls Continuous Source Current - - 1503) MOSFET symbol D
(Body Diode) A showing the
ISM Pulsed Source Current - - 600 integral reverse G
(Body Diode) C)C0 p-n junction diode. S
Vso Diode Forward Voltage - - 1.2 V To = 25°C, Is = 30A, VGS = 0V ©
in Reverse Recovery Time - 42 63 ns Tu = 25°C, IF = 30A, VDD = 15V
er Reverse Recovery Charge - 34 51 nC di/dt = 100A/ps ©
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