IRL640 ,200V Single N-Channel HEXFET Power MOSFET in a TO-220AB packageapplications at power dissipation levels to approximately 50 watts. The low
thermal resistance and ..
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HEXFETO Power MOSFET
q Dynamic dv/dt Rat ..
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IRL640-IRL640PBF
200V Single N-Channel HEXFET Power MOSFET in a TO-220AB package
International
14212 Rectifier
PD-9.1089
iRL640
HEXFETO Power MOSFET
0 Dynamic dv/dt Rating
Repetitive Avalanche Rated
Logic-Level Gate Drive
RDs(on) Specified at VGs=4V & 5V
Fast Switching
Ease of Paralleling
Simple Drive Requirements
Description
Third Generation HEXFETs from International Rectifier provide the designer
with the best combination of fast switching, ruggedized device design, low
VDSS = 200V
RDS(on) = 0.189
on-resistance and cost-effectiveness.
The TO-220 package is universally preferred for all commercial-industrial
applications at power dissipation levels to approximately 50 watts. The low
thermal resistance and low package cost of the T0220 contribute to its wide
acceptance throughout the industry.
Absolute Maximum Ratings
TO-220AB
Parameter Max. Units
I In @ To = 25°C Continuous Drain Current, I/ss @ 5.0 V 17
lo @ To = 100°C 'Continuous Drain Current, Vas @ 5.0 V 11 A
IDM .. _ ' Pulsed Drain Current C) 68
Pp @ To = 25°C Power Dissipatiqh 125 W
____ - Linear Derating Factor 1.0 _ W/°C
y(3_s__ _ Gate-to-Source Voltage - - _ 0:10 . __ - . V F _
EAS Single. Putse Avalanche Energy (2: 580 mJ I
_ IAR Avalanche Current co -. . ,... 10 A
. EAR _ Repetitive Avalanche Energy ti) 13 mJ
dv/dt _' Peak Diode Recovery dv/dt. CD 5.0 V/ns
To Operating Junction and -55 to +150
TSTG Storage Temperature Range ' (
. Soldering Temperature, for 10 seconds 300 (1.6mm from case) ;
_.. _ Mounting Torque, 6-32 or M3 screw 10 Ibf-in (1.1 N-m) (
Thermal Resistance
I _ Parameter _ . Min. ' Typ._v Mai. Units_ -
' Ftwc Junction-to-ce _ - - .. - 1.0
:_R9cs _ Case-to-Sink, Flat, Greased Surfape . - 0.50 - °C/W
l Ram _ - - I
AJunctiQnito-Ambient
IIRL64
Electrical Characteristics tii) Tu = 25°C (unless otherwise specified)
' Parameter Min. Typ. Max. Units Test Conditions
V(Bapss Drain-to-Source Breakdown Voltage 200 - - V Ves=OV, Io: 250p.A
AV(Brvoss/ATo Breakdown Voltage Temp. Coefficient - 0.27 - V/°C Reference to 25°C. lo: 1mA
RDS(on) Static Drain-to-Source On-Resistance - -- l 0.18 n I/as-HMV, |D=1OA ©
_ . - - 0.27 Ves=4.0V, |o=8.5A ©
Vegan) Gate Threshold Voltage 1.0 I - 2.0 V Vios=Vss, ID: 250PA
ggs ' Forward Transconductance 16 l - - S Vos=50V, lo=10A ©
, loss Drain-to-Source Leakage Current _ - - 25 “A Vos=200V, Veszov
- f 250 Vos=160V, VGs=0V, TJ=125°C
less Gate-tp-Source Forward Learagts, é L.." 100 n A Ves=10V
. Gate-to-Source Reverse Leakage - - -100 a VGs=-10V
ch Total. Gate_Ciharge T I t - - , Ist, 10:17A
Qgs date-to-SFU/oe Charge - - 9.0 n0 3 Vos=160V
di Gate-tto-thair) ("Miller") Charge - - 38 Ves=5.0V See Fig. 6 and 13 ©
td(on) Turn-On Delay Time - 8.0 - VDD=100V
t f Rise Time - 83 - ns lo=17A
Idiom Ttyn-off Delay Time - 44 - Re=4.6(l
tt Fall Time.. - - 52 - RD=5.7Q See Figure 10 ©
Lo Internal Drain Inductance - 4.5 - te(ratilnd.') PER
- nH from package , GET
Ls Internal Source Inductance - 7.5 - and center of ‘11.
die contact a
Ciss [InputCapacitance ==T 1800 1 - Ves=OV
Coss ' Output Capacitance - . 400 _ - pF 'Vos= 25V
Crss 4 Reverse Transfer Capacitance - i 120 1 - f=1.0MHz Stser'igure 5
Source-Drain Ratings and Characteristics
-='-h'arariete", - .' Min. I Typ. Max. Units Test Conditions
Q 'is-teo-rata;, Source Current l - I - l 17 MOSFET symbol .. D
I ( (Body Diode) _ 7 _ l I A showing the
ISM . Pulsed Source Current I - - 68 integral reverse G
(Body Diode) l) - p-n junction diode. s
l/sq Diode Ftorv/arc1l/oltage ,. _ - _ 2.0 V TJ=25°C, Is=17A, Ves=OV ©
tn “Reverse Recovery Time . - 310 470 ' ns TJ=25°C, IF--17A
'Ef._. Reverse Recoyery Chargg_ 7 3.2 4.8 pC Idi/dt=100A/ps (ID
. ton Fo rward Turn30n Time Intrinsic turn-on time is neglegible (turn-on is dominated by Ls+LD)
Notes:
(f) Repetitive rating; pulse width limited by
max. junction temperature (See Figure 11)
(2) VDD=50V, starting TJ=25°C. L=3.0mH
Re=25§2, IAs=17A (See Figure 12)
TJS150°C
(33 Isos17A, di/de50A/ws, VDDSV(BR)Dss,
(g) Pulse width s: 300 us; duty cycle C2%.
