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IRL630S
200V Single N-Channel HEXFET Power MOSFET in a D2-Pak package
Intetttatiipoall PD-9.1254
IOR Rectifier IRL630S
HEXFET6 Power MOSFET
Surface Mount
Available in Tape & Reel D
Dynamic dv/dt Rating VDSS = 200V
Repetitive Avalanche Rated
Logic-Level Gate Drive " RDS(on) = 0.40n
RDS(0N) Specified at VGS = 4V & 5V
150°C Operating Temperature ID = 9.0A
Description
Third Generation HEXFETs from International Rectifier provide the designer
with the best combination of fast switching, ruggedized device design, low
on-resistance and cost-effectiveness.
The SMD-220 is a surface mount power package capable of accommodating die
sizes up to HEX-4. It provides the highest power capability and the lowest possible
on-resistance in any existing surface mount package. The SMD-220 is suitable
for high current applications because of its low internal connection resistance and
can dissipate up to 2.0W in a typical surface mount application. SMD-220
Absolute Maximum Ratings
Parameter Max. Units
ID @ Tc = 25''C Continuous Drain Current, VGs @ 5.0V 9.0
ID @ Tc = 100°C Continuous Drain Current, VGS @ 5.0V 5.7 A
G, Pulsed Drain Current OD 36
Po @Tc = 25''C Power Dissipation 74
Pro @Tc = 25''C Power Dissipation (PCB Mount)" 3.1 W
Linear Derating Factor 0.59
Linear Derating Factor (PCB Mount)" 0.025 W/OC
l/ss Gate-to-Source Voltage 110 V
EAs Single Pulse Avalanche Energy © 250 mJ
IAR Avalanche Current© 9.0 A
EAR Repetitive Avalanche Energy (D 7.4 mJ
dv/dt Peak Diode Recovery dv/dt © 5.0 V/ns
TJ,TSTG Junction and Storage Temperature Range -55 to + 150 o
Soldering Temperature, for 10 seconds 300 (1.6mm from case) C
Thermal Resistance
Parameter Min. Typ. Max. Units
ReJC Junction-to-Case - - 1.7
ReJA Junction-to-Ambient (PCB Mount)" - - 40 "C/W
ReJA Junction-to-Ambient - - 62
** When mounted on 1" square PCB (FR-A or G-10 Material).
For recommended footprint and soldering techniques refer to application note #AN-994.
Revision 0
IRL630S TOR
Electrical Characteristics @ ll = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
V(BR)DSS Drain-to-Source Breakdown Voltage 200 - - V VGs = 0V, ID = 250PA
AV(BR)DSS/ATJ Breakdown Voltage Temp. Coemcient - 0.27 - V/°C Reference to 25°C, ID = 1mA
RDS(ON) Static Drain-to-Source On-Resistance - - 0.40 n VGS = 5.0V, ID = 5.4A ©
- - 0.50 VGS = 4.0V, ID = 4.5A ©
VGS(th) Gate Threshold Voltage 1.0 - 2.0 V VDS = Vss, ID = 250pA
gfs Forward Transconductance 4.8 - - S Vos = 50V, ID = 5.4A
loss Drain-to-Source Leakage Current - - 25 pA VDS = 200V, I/ss = 0V
- - 250 VDs = 160V, VGS = 0V, TJ = 125°C
less Gate-to-Source Forward Leakage - - 100 n A VGS = 10V
Gate-to-Source Reverse Leakage - - -100 VGS = -10V
% Total Gate Charge - - 40 ID = 9.0A
Qgs Gate-to-Source Charge - - 5.5 nC VDs = 160V
di Gate-to-Drain ("Miller") Charge - - 24 V95 = 10V, See Fig. 6 and 13 ©
tam.) Turn-On Delay Time - 8.0 - ns VDD = 100V
tr Rise Time - 57 - ID = 9.0A
td(off) Turn-Off Delay Time - 38 - Rs = 6.09
If Fall Time - 33 - RD = 119, See Fig. 10 ©
Lo Internal Drain Inductance - 4.5 - Between Igad, tr
nH 6mm (0.25in.) 6
Ls Internal Source Inductance - 7.5 - from package . J
and center of die contact g
Ciss Input Capacitance - 1100 - VGS = 0V
Coss Output Capacitance - 220 - pF Vros = 25V
Crss Reverse Transfer Capacitance - 70 - f = 1.0MHz, See Fig. 5
Source-Drain Ratings and Characteristics
Parameter Min. Typ. Max. Units Conditions
ls Continuous Source Current MOSFET symbol r,,,\_\ U
(Body Diode) - - 9.0 A showing the g” L '>-_
ISM Pulsed Source Current - - 36 integral reverse a 's ’71,...-
(Body Diode) OD p-n junction diode. 's----" c,
VSD Diode Forward Voltage - - 2.0 V TJ = 25°C, Is = 9.0A, I/cs = 0V ©
trr Reverse Recovery Time - 230 350 ns TJ = 25°C, IF = 9.0A
Qrr Reverse RecoveryCharge - 1.7 2.6 PC di/dt = 100A/ps Ci)
ton Forward Tum-On Time Intrinsic tum-on time is negligible (tum-on is dominated by LS+LD)
Notes:
co Repetitive rating; pulse width limited by G) ISD g 9.0A, di/dt g 120A/ps, V00 3 V(BR)DSS,
max. junction temperature. ( See fig. 11 ) To f 150°C
© VDD = 25V, starting To = 25°C, L = 4.6mH © Pulse width s: 300ps; duty cycle s: 2%.
Rs = 259, IAS-- 9.0A. (See Figure 12)
