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IRL5602S-IRL5602STRL-IRL5602STRR
-20V Single P-Channel HEXFET Power MOSFET in a D2-Pak package
International
:raRIectifier
P-Channel
Description
Advanced Process Technology
Dynamic dv/dt Rating
175°C Operating Temperature
PD- 91888
IRL5602S
HEXFET® Power MOSFET
Fast Switching G
Fully Avalanche Rated
VDSS = -20V
RDS(on) = 0.0429
ID = -24A
Fifth Generation HEXFETs from International Rectifier utilize advanced
processing techniques to achieve extremely low on-resistance per silicon area.
This benefit, combined with the fast switching speed and ruggedized device
design that HEXFET Power MOSFETs are well known for, provides the
designer with an extremely efficient and reliable device for use in a wide variety
of applications.
The D2Pak is a surface mount power package capable of accommodating die
sizes up to HEX-4. it provides the highest power capability and the lowest
possible on-resistance in any existing surface mount package. The D2Pak is
suitable for high current applications because of its low internal connection
resistance and can dissipate up to 2.0W in a typical surface mount application.
Absolute Maximum Ratings
Parameter Max. Units
ID @ Tc = 25°C Continuous Drain Current, VGS @ -4.5V -24
ID @ Tc = 100°C Continuous Drain Current, VGS © -4.5V -17 A
IDM Pulsed Drain Current (D -96
PD @Tc = 25°C Power Dissipation 75 W
Linear Derating Factor 0.5 W/°C
VGS Gate-to-Source Voltage * 8.0 V
EAS Single Pulse Avalanche Energy© 290 m]
IAR Avalanche Current© -12 A
EAR Repetitive Avalanche Energy© 7.5 mJ
dv/dt Peak Diode Recovery dv/dt © -0.81 V/ns
To Operating Junction and -55 to + 175
TSTG Storage Temperature Range °C
Soldering Temperature, for 10 seconds 300 (1.6mm from case )
Thermal Resistance
Parameter Typ. Max. Units
Rac Junction-to-Case - 2.0 0
ReJA Junction-to-Ambient ( PCB Mounted,steady-state)" - 40 CM,
1
5/11/99
IRL5602S
International
TOR Rectifier
Electrical Characteristics @ T J = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
V(BR)DSS Drain-to-Source Breakdown Voltage -20 - - V VGS = 0V, ID = -250pA
AV
- - 0.042 l/ss = -4.5V, ID = -12A (4)
Rosm Static Drain-to-Source On-Resistance - - 0.062 C2 VGS = -2.7V, ID = -10A ©
- - 0.075 VGS = -2.5V, ID = -10A ©
VGS(th) Gate Threshold Voltage -0.7 - -1.0 V Vos = VGS, ID = -250PA
gfs Forward Transconductance 12 - - S Vos = -15V, lo = -12A©
. - - -25 Vos = -20V, VGS = 0V
loss Drain-to-Source Leakage Current - - -250 PA VDs = -16V, N/ss = 0V, Tu = 150°C
less Gate-to-Source Forward Leakage - - 500 n A VGs = -8.0V
Gate-to-Source Reverse Leakage - - -500 VGs = 8.0V
% Total Gate Charge - - 44 ID = -12A
Q95 Gate-to-Source Charge - - 8.7 no Vos = -16V
di Gate-to-Drain ("Miller") Charge - - 19 VGS = -4.5V, See Fig. 6 and 13 (4D(S)
tdwn) Turn-On Delay Time - 9.7 - We, = -10 V
tr Rise Time - 73 - ns ID = -12A
td(off) Turn-Off Delay Time - 53 - Rs = 6.09, Vss = 4.5V
t, Fall Time - 84 - RD = 0.89, See Fig. 10®©
Ls Internal Source Inductance - 7.5 - nH Between lead, .
and center of die contact
Ciss Input Capacitance - 1460 - VGs = 0V
Coss Output Capacitance - 790 - pF Ws = -15V
Crss Reverse Transfer Capacitance - 370 - f = 1.0MHz, See Fig. 5©
Source-Drain Ratings and Characteristics
Parameter Min. Typ. Max Units Conditions
Is Continuous Source Current - - -24 MOSFET symbol D
(Body Diode) A showing the
ISM Pulsed Source Current integral reverse G
(Body Diode) OD - - -96 p-n junction diode. S
VSD Diode Forward Voltage - - -1.4 V TJ = 25''C, Is = -12A, VGS = 0V (9
tn Reverse Recovery Time - 58 88 ns T: = 25°C, IF = -12A
Qrr Reverse RecoveryCharge - 54 81 nC di/dt = -100A/ps C9
ton Forward Turn-On Time Intrinsic tum-on time is negligible (tum-on is dominated by LS+LD)
Notes:
C) Repetitive rating; pulse width limited by
max. junction temperature. ( See fig. 11 )
© Starting TJ = 25°C, L = 3.0mH
Rs = 259, IAS-- -14A. (See Figure 12)
** When mounted on FR-4 board using minimum recommended footprint.
For recommended footprint and soldering techniques refer to application note #AN-994.
© ISD s: -12A, di/dt s 120A/ps, vDD f V(BR)DSS,
T J f 175°C
© Pulse width f 300ps; duty cycle f 2%.
