IRL540NSTRRPBF ,100V Single N-Channel HEXFET Power MOSFET in a D2-Pak package
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IRL540NSTRRPBF
100V Single N-Channel HEXFET Power MOSFET in a TO-262 package
International
TOR Rectifier
Advanced Process Technology
Surface Muum (lfRL540NG')
Low-profiln thmugh-hole JRLS40NL)
1TS’C Dpurating Tempetamto
Fast Stmltzhing
Fuily Avalanche Hated
Lead.-Free
Description
Fifth Generatlon HEXFETS from International Rectmer
ublize advanced processing techniques to achneve
extremely low or-stance pet silicon area. This
benefit. combined with the fast swutchmg speed and
ruggedized devicedesign that HEXFET Power MOSFETs
ara well known for, prtovitftrsthtrdtsigrwrwith an extremely
emc-ent and tenable device tor use In a mac; variety of
avpllca1tons
The Di'Pak 's a surface mount power package capable ot
PD- 95234
IRL540NS/LPbF
y-iExFETe' Power MOSFET
Votes = 100V
Rosmm = 0.0445;
l = 36A
accommodating due SIZGS up to HEX-4. It provides the 5'3“ -o 2t
mghest power capammy and the lowest possible on-
resistance m any existing surface mount package The
D2Pak IS suntame for high current appllcations because of
us low mtemal connection resistance and can dissipate up
to 2 OW m a typical surface mount applicator,
The through-nole version (IRF540NL) is available for low.
profile applications
Absolute Maximum Ratings
Parameter Max, Units
ID lit TC = 25 'C Continuous Drain Current. VGs EEO IWIS: 36
Ic, te TC = 100 ‘C Conténuous Drain Current, Vas. - IUVS! 26 A
tos, Pulsed Drain Current Co s - 120
h, CPT. = 2t5% Power Dissipation 3,8 Pl
Po ffi'T; = 25’C Power Dtsmpation 140 W
Lunear Deratlng Faclm 0.91 W-“C
Ware. aste-lo-tiource Voltage t 16 V
Ess. Single Pulse Avalanche Eniisrgy2ei; 210 mJ
Em Mala nche Current]: 18 A
LEAH Repetitive Avalanche Energy 14 ml
dpidt Peak Diode Recovery dv/dt ISIS." 5.0 Vine
T, Operating Junction and -55 lo + 175
Tsuv. Storage Temperature Range '-'C
Soldanng Tempmatura. ior 10 seconds 300 (l.6mm from case )
Thermal Resistance
Parameter Typ. Max. Units
R, 5; Junction-to-Case - 1.1 £ch
Rm Junction-to-Ambicnt ( PCB Mi:xrtedsteadye2ale)" - ao
1
05/04/04
http://www.ltm.com/
lRL540NS/LPbF International
TOR Rectifier
Electrical Characteristics @ Ts = 25''C (unless otherwise specified)
Parameter Min. Typ. Max. Units Condillons
meoss Dtatn.ttrSouttX Breakdown Voltage 100 - - It Vos = OV, k, a 250PA
Aanusy'ATJ Breakdown Voltage Temp. Coefficient - 0.11 - W'C Reference to 25''C, lo = ImA©
- - 0.044 Vas =10V.ID =18A (9
Roam Static Dtam.ttrSource On-Resnstanoe - - 0.053 n Vos 3 5.0V. ID a 18A 0)
- - 0.063 Vas = tOV, ID = 15A q)
Vgslm) Gate Threshold Voltage 1.0 - 2.0 V Vos = Mas. ID = 250PA
Ps Forward Transconductance 14 - - S Virs w. 2SV, io = IRAS
- - 25 Vos ' 100V. Vtss = 0V
logs Dtaryto-Soumo Leakage Current - - 250 A Vos a 80V, Vas w. OV, T., = 150''C
lass Gale-ta-Source Forward Leakage - -- 100 n A Vos = 16V
Gate-to-Source Reverse Leakage - - .100 Vas = -16V
% Total Gate Charge - - 74 Io = IBA
09, Gate-to-Source Charge - - 9.4 nC Vos = MV
tho Gate.to-Drain ("Miller") Charge - - 38 Vas ' 5.0V. See Fig, 6 and 13 {0(5)
tsem,'. Tum-On Delay Time - tt - Voo = 50V
t, Rise Tune - 81 - ns lo = 18A
tstsny Turn-OH Delay Time - 39 - Re a son. Vcs ' 5.0V
t, Fall Time - 62 - R0 = 2.7il, See Fig, 10 Q36)
Ls Internal Source Inmcmco - 7.5 - nH Between lead, ,
and center ol die contacl
G, Input Capacitance - 1800 - Vas = 0V
Cass Output Capacitance - 350 - pF Vos = 251/
G, Reverse Transfer Capacitance - 170 - f = 1.0MHz. See Fig, 56)
Source-Drain Ratings and Characteristics
W Parameter Min. Typ. Max. Units Conditions
ls Continuous Source Current - - 36 MOSFET symbol "
(Body Diode) A shovnng ma
ISM Pulsed Source Current integral rsverse U
(Body Diode) mm - - 120 fr-n function diode. b
Vso Diodo Forward Voltage - - 1.3 V T, ' 25''C, is = 18A. Vas = 0V C9T,
tr, _ Reverse Recovery Tame - 190 290 ns T, = 25''C, I; w. 18A
G, Reverse RecoveryChargo - Lt 1.7 pC dild1 = 100A/ps $0
tan Forward Tum-On Tuma Intrinsic tum-on time is negligible (tum-on s dominated by LseLo)
Notes:
OD Rapolmvo rating. puiso width limited by (D Pu1se wudlh s 300ps; duty cycle s 2%.
max. junction temperalure. (See 119. 11 )
© Starting T J = 25''C, L = 1.9mH (S) Uses |RL540N data and test conditions
Rs 2 Mil, 15 = 18A. (See Figure 12)
CD Iso f. 18A. ds/dt s 180Nus. Voos Vuamoss-
T Js 1750C
.. When mounted on I" square PCB ( FR-4 or G-10Material ).
For recommended soldering techniques refer to application note #AN-QSM.
2
