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IRL540NL-IRL540NS
100V Single N-Channel HEXFET Power MOSFET in a TO-262 package
International
Tart, Rectifier
PD-91535
IRL540NS/L
Advanced Process Technology
Surface Mount (IRL540NS)
Low-profile through-hole (IRL540NL)
175°C Operating Temperature
Fast Switching
Fully Avalanche Rated
Description
Fifth Generation HEXFETs from International Rectifier
utilize advanced processing techniques to achieve
extremely low on-resistance per silicon area. This
benefit, combined with the fast switching speed and
ruggedized device design that HEXFET Power MOSFETs
areweil known for, providesthe designerwith an extremely
emcient and reliable device for use in a wide variety of
applications.
The D2Pak is a surface mount power package capable of
accommodating die sizes up to HEX-4. It provides the
highest power capability and the lowest possible on-
HEXFET0 Power MOSFET
VDSS = 100V
A RDS(on) = 0.044n
s ID = 36A
8buitr
resistance in any existing surface mount package. The 02 Pak T0-262
D2Pak is suitable for high current applications because of
its low internal connection resistance and can dissipate up
to 2.0W in a typical surface mount application.
The through-hole version (IRF540NL) is available for low-
profile applications.
Absolute Maximum Ratings
Parameter Max. Units
ID @ Tc = 25°C Continuous Drain Current, VGS @ 10V© 36
ID @ Tc = 100°C Continuous Drain Current, VGS @ 10V© 26 A
IDM Pulsed Drain Current cos 120
PD @TA = 25°C Power Dissipation 3.8 W
Pro @Tc = 25°C Power Dissipation 140
Linear Derating Factor 0.91 W/''C
VGS Gate-to-Source Voltage i 16
EAS Single Pulse Avalanche Energy©6) 310 mJ
IAR Avalanche Currentc0 18 A
EAR Repetitive Avalanche EnergyCD 14 mi
dv/dt Peak Diode Recovery dv/dt ©S 5.0 V/ns
To Operating Junction and -55 to + 175
TSTG Storage Temperature Range ''C
Soldering Temperature, for 10 seconds 300 (1.6mm from case )
Thermal Resistance
Parameter Typ. Max. Units
Rauc Junction-to-Case - 1 .1 o
ReJA Junction-to-Ambient ( PCB Mounted/steady-state)" - 40 C/W
5/13/98
IRL540NS/L
International
TOR Rectifier
Electrical Characteristics @ T J = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
V(BR)DSS Drain-to-Source Breakdown Voltage 100 - - V VGS = 0V, ID = 250PA
AV(BR)DSS/ATJ Breakdown Voltage Temp. Coemcient - 0.11 - V/°C Reference to 25°C, ID = 1mAS
- - 0.044 VGS = 10V, ID = 18A ©
RDS(on) Static Drain-to-Source On-Resistance - - 0.053 Q Vss = 5.0V, ID = 18A ©
- - 0.063 v.33 = 4.0V, ID = 15A ©
VGS(th) Gate Threshold Voltage 1.0 - 2.0 V Vos = Vss, ID = 250pA
gfs Forward Transconductance 14 - - S VDs = 25V, ID = 18A©
. - - 25 V93 = 100V, Vss = 0V
loss Drain-to-Source Leakage Current - - 250 Vos = 80V, VGs = 0V, TJ = 150''C
less Gate-to-Source Forward Leakage - - 100 n A VGs = 16V
Gate-to-Source Reverse Leakage - - -100 VGS = -16V
Qg Total Gate Charge - - 74 lo = 18A
Qgs Gate-to-Source Charge - - 9.4 nC Vros = 80V
di Gate-to-Drain ("Miller") Charge - - 38 VGS = 5.0V, See Fig. 6 and 13 @©
tam) Turn-On Delay Time - 11 - VDD = 50V
tr Rise Time - 81 - ns ID = 18A
td(oit) Turn-Off Delay Time - 39 - Rs = 5.09, VGS = 5.0V
tf Fall Time - 62 - RD = 2.79, See Fig. 10 @©
Ls Internal Source Inductance - 7.5 - nH Between lead, .
and center of die contact
Ciss Input Capacitance - 1800 - VGs = 0V
Cass Output Capacitance - 350 - pF Vos = 25V
Crss Reverse Transfer Capacitance - 170 - f = 1.0MHz, See Fig. 5©
Source-Drain Ratings and Characteristics
Parameter Min. Typ. Max. Units Conditions
Is Continuous Source Current - - 36 MOSFET symbol D
(Body Diode) A showing the
ISM Pulsed Source Current - - 120 integral reverse G
(Body Diode) (D6) p-n junction diode. s
Vso Diode Forward Voltage - - 1.3 V T: = 25°C, Is = 18A, VGS = 0V ©©
trr Reverse Recovery Time - 190 290 ns To = 25°C, IF = 18A
Qrr Reverse RecoveryCharge - 1.1 1.7 PC di/dt = 100/Vps ©©
ton Forward Turn-On Time Intrinsic turn-on time is negligible (tum-on is dominated by LS+LD)
Notes:
C) Repetitive rating; pulse width limited by
max. junction temperature. ( See fig. 11 )
© Starting T: = 25°C, L = 1.9mH
RG = 259, IAS = 18A. (See Figure 12)
co ISD S 18A, di/dt S 180A/ps, VDD S V(BR)DSS,
T J s: 175°C
** When mounted on 1" square PCB ( FR-4 or G-IO Material ).
For recommended soldering techniques refer to application note #AN-994.
© Pulse width S 300ps; duty cycle 3 2%.
s Uses IRL540N data and test conditions
