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IRL540N-IRL540N.-IRL540NPBF
100V Single N-Channel HEXFET Power MOSFET in a TO-220AB package
PD - 91495A
IRL540N
International
TOR Rectifier
HEXFET® Power MOSFET
o Logic-Level Gate Drive D
o Advanced Process Technology VDss = 100V
. Dynamic dv/dt Rating
o 175°C Operating Temperature FN, RDSM) = (10449
. Fast Switching G
0 Fully Avalanche Rated ID = 36A
Description s
Fifth Generation HEXFETs from International Rectifier
utilize advanced processing techniques to achieve
extremely low on-resistance per silicon area. This
benefit, combined with the fast switching speed and
ruggedized device design that HEXFET Power
MOSFETs are well known for, provides the designer l,
with an extremely efficient and reliable device for use xtrritly
in a wide variety of applications. 'i)ffi-isii'-'a'i-'i-)
The TO-220 package is universally preferred for all
commerciaI-industrialapplications atpowerdissipation
levels to approximately 50 watts. The low thermal
resistance and low package cost of the TO-220 TO-220AB
contribute to its wide acceptance throughout the
industry.
Absolute Maximum Ratings
Parameter Max. Units
ID @ Tc = 25°C Continuous Drain Current, VGS @ 10V 36
ID @ Tc = 100°C Continuous Drain Current, VGS @ 10V 26 A
IDM Pulsed Drain Current C) 120
Pro @Tc = 25°C Power Dissipation 140 W
Linear Derating Factor 0.91 W/''C
VGS Gate-to-Source Voltage i 16 V
EAs Single Pulse Avalanche Energy© 310 mJ
IAR Avalanche Current0) 18 A
EAR Repetitive Avalanche Energy(0 14 mJ
dv/dt Peak Diode Recovery dv/dt © 5.0 V/ns
TJ Operating Junction and -55 to + 175
TSTG Storage Temperature Range °c
Soldering Temperature, for 10 seconds 300 (1.6mm from case )
Mounting torque, 6-32 or M3 srew IO Ibf-in (1.1Nom)
Thermal Resistance
Parameter Typ. Max. Units
ReJc Junction-to-Case - 1.1
Recs Case-to-Sink, Flat, Greased Surface 0.50 - "C/W
ReJA Junction-to-Ambient - 62
5/13/98
IRL540N
International
TOR Rectifier
Electrical Characteristics @ T J = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
V(BR)DSS Drain-to-Source Breakdown Voltage 100 - - V VGS = 0V, ID = 250PA
AV
- - 0.044 l/ss =10V,ID = 18A ©
Rrosom Static Drain-to-Source On-Resistance - - 0.053 Q VGS = 5.0V, ID = 18A ©
- - 0.063 VGS = 4.0V, ID = 15A ©
VGsah) Gate Threshold Voltage 1.0 - 2.0 V Ws = VGs, ID = 250PA
9ts Forward Transconductance 14 - - S Vros = 25V, ID = 18A
loss Drain-to-Source Leakage Current T, T, Ji, PA VS: =" 1t(//)tt,',C),, = 150°C
less Gate-to-Source Forward Leakage - - 100 n A l/ss = 16V
Gate-to-Source Reverse Leakage - - -100 VGS = -16V
09 Total Gate Charge - - 74 ID = 18A
Qgs Gate-to-Source Charge - - 9.4 no Vros = 5.0V
di Gate-to-Drain ("Miller") Charge - - 38 Vss = 5.0V, See Fig. 6 and 13 (D
tdmn) Turn-On Delay Time - 11 _-.- VDD = 50V
tr Rise Time - 81 - ns ID = 18A
td(off) Turn-Off Delay Time - 39 - Rs = 5.09, VGS = 5.0V
tr Fall Time 62 R9 = 2.79, See Fig. 10 ©
. Between lead, D
u, Internal Drain Inductance - 4.5 - nH 6mm (0.25in.) E )
Ls Intemal Source Inductance - 7.5 --.- from package . G _
and center of die contact s
Ciss Input Capacitance - 1800 - Was = 0V
Coss Output Capacitance - 350 - pF Vos = 25V
Crss Reverse Transfer Capacitance - 170 - f = 1.0MHz, See Fig. 5
Source-Drain Ratings and Characteristics
Parameter Min. Typ. Max. Units Conditions
Is Continuous Source Current - - 36 MOSFET symbol D
(Body Diode) A showing the
ISM Pulsed Source Current integral reverse G
(Body Diode) C)6) - - 120 p-n junction diode. s
VSD Diode Forward Voltage - - 1.3 V To = 25°C, Is = 18A, VGS = 0V ©
trr Reverse Recovery Time - 190 290 ns TJ = 25°C, IF = 18A
Qrr Reverse RecoveryCharge - 1.1 1.7 PC di/dt = 100A/ps ©
ton Forward Turn-On Time Intrinsic tum-on time is negligible (tum-on is dominated by LS+LD)
Notes:
co Repetitive rating; pulse width limited by
max. junction temperature. (See fig. 11 )
C) Starting To = 25°C, L = 1.9mH
Rs = 250, IAS = 18A. (See Figure 12)
© ISD 3 18A, di/dt s 180/Ups, VDD s V(BR)DSS,
T J 5 175°C
GD Pulse width 3 300ps; duty cycle 3 2%
