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IRL530S
100V Single N-Channel HEXFET Power MOSFET in a D2-Pak package
International
TOR Rectifier
HEXFET® Power MOSFET
0 Surface Mount
Available in Tape & Reel
Dynamic dv/dt Rating
Repetitive Avalanche Rated
o Logic-Level Gate Drive
o Ros(on)8pecified at VGS=4V & 5V
0 175°C Operating Temperature
Description
Third Generation HEXFETs from International Rectifier provide the designer
with the best combination of fast switching, ruggedized device design, low
PD-9.909
lRL530S
Vross= 100V
RDS(on) = 0.169
|D=15A
on-resistance and cost-effectiveness.
The SMD-220 is a surface mount power package capable of accommodating
die sizes up to HEX-4. It provides the highest power capability and the lowest
possible on-resistance in any existing surface mount package. The SMD-220
is suitable for high current applications because of its low internal connection
resistance and can dissipate up to 2.0W in a typical surface mount application.
SMD-220
Absolute Maximum Ratings
Parameter Max. Units
V Io © To = 25°C Continuous Drain Current, Vos @ 5.0 V 15
ID @ Tc = 100°C Continuous Drain Current, l/cs © 5.0 V 11 A
IDM Pulsed Drain Current C) 60
Po © To = 25°C Power Dissipation 88 W
PD o TA = 25°C Power Dissipation (PCB Mount)" 3.7
Linear Derating Factor 0.59 WPC
Linear Derating Factor (PCB Mount)" 0.025
Vss Gate-to-Source Voltage :10 v"
EAS Single Pulse Avalanche Energy Q) 290 mJ
IAR Avalanche Current CD 15 A
EAR Repetitive Avalanche Energy (D 8.8 mJ
dv/dt Peak Diode Recovery dv/dt © 5.5 V/ns
To, Tsro Junction and Storage Temperature Range -55 to +175 °C
Soldering Temperature, for 10 seconds 300 (1.6mm from case)
Thermal Resistance
Parameter Min. Typ. Max. Units
Fhuc Junction-to-Case - - 1.7
RM Junctioh-to-Ambient (PCB mount)" - - 40 °C/W
RM Junction-to-Ambient - - 62
** When mounted on 1" square PCB (FR-4 or (3-10 Material).
For recommended footprint and soldering techniques refer to application note #AN-994.
IRLSBOS
Electrical Characteristics @ Tu = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Test Conditions
V(snmss Drain-to-Source Breakdown Voltage 100 - - V VGs=0V, ID: 250PA
AV(BR)DSS/ATJ Breakdown Voltage Temp. Coefficient - 0.14 - VPC Reference to 25°C, In: 1mA
Rosmn) Static Drain-to-Source On-Resistance - - 0,16 n VGS=5'OV' ID--9.0A ©
- - 0.22 VGs=4.0V, kr--7.5A ©
Ves(m) Gate Threshold Voltage 1.0 - 2.0 V VDs=VGs, ID: 250pA
5 gm Forward Transconductance 6.4 - - S Vos=50V, lo=9.0A ©
loss Drain-to-Source Leakage Current - - 25 uA 1/rs=100V, VGSZOV
- - 250 VDs=80V, Vss=0V, TJ=150°C
less Gate-to-Source Forward Leakage - - 100 n A Vss--10V
Gate-to-Source Reverse Leakage - - -1OO VGs=-1OV
th Total Gate Charge - - 28 10:15A
Qgs Gate-to-Source Charge - - 3.8 " Vns=80V
di Gate-to-Drain ("Miller") Charge - - 14 Vss=5.OV See Fig. 6 and 13 Cs)
td(on) Turn-On Delay Time - 4.7 - VDD=50V
tr Rise Time - 100 - ns ID:15A
tum) Turn-Off Delay Time - 22 - RG=12Q
1: Fall Time - 48 - RD=329 See Figure 10 ©
Lo Internal Drain Inductance - 4.5 - [3ii2r/r('J.ltilnd.') D
: nH from package GE )
Ls Internal Source Inductance - 7.5 , - Ind center of
die contact s
Ciss Input Capacitance - 930 - VGS=0V
Cogs Output Capacitance - 250 - pF VDs=25V
Crss Reverse Transfer Capacitance - 57 - f=1.0MHz See Figure 5
Source-Drain Ratings and Characteristics
Parameter Min. Typ. Max. Units Test Conditions
ls I Continuous Source Current - - 15 MOSFET symbol D
(Body Diode) A showing the F2:
ISM ' Pulsed Source Current - - 60 integral reverse G (tLl,
1 (Body Diode) CO p-n junction diode. s
VsD I Diode Forward Voltage - - 2.5 V TJ=250C, kr=15A, Vss--0V ©
tn Reverse Recovery Time - 150 200 ns TJ=25°C, IF=15A
Orr Reverse Recovery Charge - 0.93 1.4 wc di/dt=100A/us Ci)
ton Forward Turn-On Time Intrinsic turn-on time is neglegible (turn-on is dominated by Ls+LD)
Notes:
(j) Repetitive rating; pulse width limited by
max. junction temperature (See Figure 11)
C) VDD=25V, starting TJ=2500, L=1.9mH
RG--25n, IAs=15A (See Figure 12)
TJS175°C
© ISDS15A, di/dtS140A/ps, VDDSV(BF{)DSS.
© Pulse width f 300 ps; duty cycle 32%.
