IRL530NS ,100V Single N-Channel HEXFET Power MOSFET in a D2-Pak packageapplications.Absolute Maximum RatingsParameter Max. UnitsI @ T = 25°C Continuous Drain Current, V @ ..
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Absolute Maximum Ratings
Parameter Max. Units
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IRL530NS
100V Single N-Channel HEXFET Power MOSFET in a TO-262 package
International
TOR Rectifier
PD - 913490
IRL530NS/L
Advanced Process Technology
Surface Mount (IRL530NS)
Low-profile through-hole (IRL530NL)
175°C Operating Temperature
Fast Switching
. Fully Avalanche Rated
Description
Fifth Generation HEXFETs from International Rectifier
utilize advanced processing techniques to achieve
extremely low on-resistance per silicon area. This
benefit, combined with the fast switching speed and
ruggedized device design that HEXFET Power MOSFETs
are well known for, provides the designerwith an extremely
etMient and reliable device for use in a wide variety of
applications.
The D2Pak is a surface mount power package capable of
accommodating die sizes up to HEX-4. It provides the
highest power capability and the lowest possible on-
resistance in any existing surface mount package. The
D2Pak is suitable for high current applications because of
its low internal connection resistance and can dissipate
up to 2.0W in a typical surface mount application.
The through-hole version (IRL530NL) is available for low-
profile applications.
Absolute Maximum Ratings
HEXFET® Power MOSFET
FN, RDS(on) = 0.10n
VDSS =100V
ID = 17A
Parameter
ID @ To = 25°C Continuous Drain Current, Ves @ 10V©
ID @ To = 100°C Continuous Drain Current, Vss @ 10V©
IDM Pulsed Drain Current cos
PD @TA = 25°C Power Dissipation
Po @Tc = 25°C Power Dissipation
Linear Derating Factor
l/ss Gate-to-Source Voltage
EAS Single Pulse Avalanche Energy©S
IAR Avalanche Current0)
EAR Repetitive Avalanche Energy©
dv/dt Peak Diode Recovery dv/dt ©©
To Operating Junction and
TSTG Storage Temperature Range
-55 to + 175
Soldering Temperature, for 10 seconds
300 (1.6mm from case)
Thermal Resistance
Parameter
Typ. Max.
ReJC Junction-to-Case
.-..-.- 1.9
RNA Junction-to-Ambient ( PCB Mounted,steady-state)"
1/09/04
IRL530NS/L International
TOR iiectifier
Electrical Characteristics © T J = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
V(BR)DSS Drain-to-Source Breakdown Voltage 100 - - V VGs = 0V, ID = 250pA
AV(BR)DSSIATJ Breakdown Voltage Temp. Coefficient - 0.122 - V/°C Reference to 25°C, ID = 1mA©
- - 0.100 I/ss =10V,ID = 9.0A ©
Roswn) Static Drain-to-Source On-Resistance - - 0.120 f2 l/GS = 5.0V, Ir, = 9.0A Cr)
- - 0.150 VGS = 4.0V, ID = 8.0A ©
Vesah) Gate Threshold Voltage 1.0 - 2.0 V Vos = VGs, ID = 250pA
gts Forward Transconductance 7.7 - - S Vos = 50V, ID = 9.0AS
. - - 25 Ws = 100V, VGS = 0V
loss Drain-to-Source Leakage Current - - 250 A Vros = 80V, VGS = 0V, T: = 150°C
less Gate-to-Source Forward Leakage - - 100 n A VGS = 16V
Gate-to-Source Reverse Leakage - - -100 VGS = -16V
09 Total Gate Charge - - 34 ID = 9.0A
Qgs Gate-to-Source Charge - - 4.8 nC Vos = 80V
di Gate-to-Drain ("Miller") Charge - - 20 Vss = 5.0V, See Fig. 6 and 13 GM
tdon) Turn-On Delay Time - 7.2 - VDD = 50V
tr Rise Time - 53 - ns lr, = 9.0A
td(off) Turn-Off Delay Time - 30 - Rs = 6.09, VGS = 5.0V
tt Fall Time 26 Ro = 5.59, See Fig. 10 ©S
Ls Internal Source Inductance - 7.5 - Between lead,
nH and center of die contact
Ciss Input Capacitance - 800 - VGS = 0V
Cass Output Capacitance - 160 - pF Vos = 25V
Crss Reverse Transfer Capacitance - 90 - f = 1.0MHz, See Fig. 5©
Source-Drain Ratings and Characteristics
Parameter Min. Typ. Max. Units Conditions
Is Continuous Source Current - - 17 MOSFET symbol D
(Body Diode) A showing the
ISM Pulsed Source Current - - 60 integral reverse G
(Body Diode) ODS p-n junction diode. s
VSD Diode Forward Voltage - - 1.3 V TJ = 25°C, Is = 9.0A, VGS = 0V (ii)
trr Reverse Recovery Time - 140 210 ns Tu = 25°C, IF = 9.0A
G, Reverse Recovery Charge - 740 1100 nC di/dt = 100A/ps (4DO)
ton Forward Turn-On Time Intrinsic tum-on time is negligible (tum-on is dominated by Ls+LD)
Notes:
(O Repetitive rating; pulse width limited by © Pulse width f 300ps; duty cycle S 2%.
max. junction temperature. ( See fig. 11 )
© Starting Tu = 25°C, L = 3.7mH s Uses IRL530N data and test conditions
Re: 259, IAS = 9.0A. (See Figure 12)
© ISD f 9.0A, di/dt f 540Alps, VDD f V(BR)DSS1
T J f 175°C
** When mounted on I" square PCB ( FR-4 or G-10 Material ).
For recommended soldering techniques refer to application note #AN-994.
