IRL530NPBF ,100V Single N-Channel HEXFET Power MOSFET in a TO-220AB packageapplicationsatpowerdissipation
levels to approximately 50 watts. The low thermal
resistance and l ..
IRL530NS ,100V Single N-Channel HEXFET Power MOSFET in a D2-Pak packageapplications.Absolute Maximum RatingsParameter Max. UnitsI @ T = 25°C Continuous Drain Current, V @ ..
IRL530NSTRLPBF ,100V Single N-Channel HEXFET Power MOSFET in a D2-Pak packageapplicationsWuan-eDem.
Absolute Maximum Ratings
Parameter Max. Units
ID tp To = 25''C Contin ..
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resistance and can dissipate up to 2.0W in a t ..
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thermal resistance and ..
IRL540N ,100V Single N-Channel HEXFET Power MOSFET in a TO-220AB packagePD - 91495AIRL540N®HEXFET Power MOSFETl Logic-Level Gate DriveDl Advanced Process TechnologyV = 100 ..
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IRL530NPBF
100V Single N-Channel HEXFET Power MOSFET in a TO-220AB package
PD - 95451
International
Tart, Rectifier IRL530NPbF
HEXFETD Power MOSFET
Logic-Level Gate Drive D
Advanced Process Technology VDSS = 100V
Dynamic dv/dt Rating
175 C Qpetatlng Temperature rn RDS(on) = 0.1 on
Fast Switching G
Fully Avalanche Rated
. Lead- .ree
i5Agarfiisfirgrt s
Fifth Generation HEXFETs from International Rectifier
utilize advanced processing techniques to achieve
extremely low on-resistance per silicon area. This
benefit, combined with the fast switching speed and
ruggedized device design that HEXFET Power
MOSFETs are well known for, provides the designer
with an extremely efficient and reliable device for use
in a wide variety of applications.
ID=17A
The TO-220 package is universally preferred for all
commerciaI-industrial applications at powerdissipation
levels to approximately 50 watts. The low thermal
resistance and low package cost of the TO-220
contribute to its wide acceptance throughout the
industry.
Absolute Maximum Ratings
Parameter Max. Units
ID tp Tc = 25''C Continuous Drain Current, Vos @ 10V 17
ID tp Tc = 100''C Continuous Drain Current, Vos @ 10V 12 A
IDM Pulsed Drain Current OD 60
PD @Tc = 25°C Power Dissipation 79 W
Linear Derating Factor 0.53 W/''C
Vss Gate-to-Source Voltage l 16 V
EAS Single Pulse Avalanche Energy© 150 mJ
IAR Avalanche CurrentCI) 9.0 A
EAR Repetitive Avalanche EnergyCo 7.9 mJ
dv/dt Peak Diode Recovery dv/dt © 5.0 V/ns
Tu Operating Junction and -55 to + 175
Tsrc, Storage Temperature Range u(3
Soldering Temperature, for 10 seconds 300 (1 .6mm from case )
Mounting torque, 6-32 or M3 srew 10 Ibf-in (1.1N-m)
Thermal Resistance
Parameter Typ. Max. Units
ReJC Junction-to-Case - 1.9
Rscs Case-to-Sink, Flat, Greased Surface 0.50 - "Ch/V
RNA Junction-to-Ambient - 62
1
6/23/04
IRL530NPbF International
TOR Rectifier
Electrical Characteristics @ Tu = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
V(BRDSS Drain-to-Source Breakdown Voltage 100 - - V Veg = ov, b = 250uA
AV(ER)DSSIATJ Breakdown Voltage Temp. Coefficient - 0.122 - V/°C Reference to 25''C, ID = 1mA
- - 0.100 Veg = 10V, ID = 9.0A (9
RDSW) Static Drain-toSource On-Resistance - - 0.120 n Vss = 5.0V, ID = 9.0A co
- - 0.150 Veg = 4OV, ID = 8.0A co
Vegnm Gate Threshold Voltage 1.0 - 2.0 V Ws = Veg. ID = 250PA
gts Forward Transconductance 7.7 - - S Ws = 25V, ID = 9.0A
les Drain-toSource Leakage Current :: I] 22550 pA 1:2: , gSSIVVZ:S=_03/VTJ = 150°C
less Gate-to-Source Forward Leakage - - 100 nA Veg = 16V
Gate-to-Source Reverse Leakage - - -100 Veg = -16V
Qg Total Gate Ch arge - - 34 ID = 9.0A
095 Gate-to-Source Charge - - 4.8 nC Ws = 80V
di Gate-to-Drain ("Miller") Charge - - 20 Veg = 5.0V, See Fig. 6 and 13 CO
tam) Turn-On Delay Time - 7.2 - VDD = 50V
tr Rise Time - 53 - ns ID = 9.0A
td(off) Turn-Off Delay Time - 30 - Rs = 6.09, Veg = 5.0V
t, Fall Time 26 RD = 5.59, See Fig. 10 C4)
LD Internal Drain Inductance - 4.5 - nH t,t:e;ld'it,f)' £0
LS Internal Source Inductance - 7.5 - from package . G
and center of die contact a
Clss Input Capacitance - 800 - l/ss = 0V
Coss Output Capacitance - 160 - pF Ws = 25V
Crss Reverse Transfer Capacitance - 90 - f = 1.0MHz, See Fig. 5
Source-Drain Ratings and Characteristics
Parameter Min. Typ. Max. Units Conditions
Is Continuous Source Current MOSFET symbol D
(Body Diode) - - 17 A showing the Q
ISM Pulsed Source Current integral reverse 0
(Body Diode) Cot) - - 60 p-n junction diode. _ s
Va: Diode Forward Voltage - - 1.3 V TJ = 25''C, Is = 9.0A, Vss = 0V C4)
trr Reverse Recovery Time - 140 210 ns Tu = 25''C, IF = 9.0A
er Reverse RecoveryCharge - 740 1100 nC di/dt = 100A/ps (9
ton Forward Turn-On Time Intrinsic turn-on time is negligible (tum-on is dominated by L3+LD)
Notes:
(O Repetitive rating; pulse width limited by © ISD s 9.0A, di/dt s 540A/ps, VDD SVBRDSS.
max.junction temperature. ( See fig. 11 ) Tr-c 175°C
© Starting TJ = 25''C, L = 3.7mH C4) Pulse width I 300ps; duty cycle f 2%
Rs = 25n, IAS = 9.0A. (See Figure 12)
2
