IRL530 ,100V Single N-Channel HEXFET Power MOSFET in a TO-220AB packageapplications at power dissipation levels to approximately 50 watts. The low
thermal resistance and ..
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Absolute Maximum Ratings
Parameter Max. Units
ID tp To = 25''C Contin ..
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IRL530
100V Single N-Channel HEXFET Power MOSFET in a TO-220AB package
International
TOR Rectifier
PD-9.5620
lfRL530
HEXFET® Power MOSFET
0 Dynamic dv/dt Rating
0 Repetitive Avalanche Rated
It Logic-Level Gate Drive
It Ros(on) Specified at VGs=4V & 5V
0 175°C Operating Temperature
o Fast Switching
0 Ease of Paralleling
Description
Third Generation HEXFETs from International Rectifier provide the designer
with the best combination of fast switching, ruggedized device design, low
D Vas,s = 100V
RDS(on) .".Td 0 16Q
on-resistance and cost-effectiveness.
The TO-220 package is universally preferred for all commercial-industrial
applications at power dissipation levels to approximately 50 watts. The low
thermal resistance and low package cost of the TO-22O contribute to its wide
acceptance throughout the industry.
TO-220AB
Absolute Maximum Ratings
Parameter Max. Units
10 @ To = 25°C Continuous Drain Current, VGs @ 5.0 V 15
ID @ Tc = 100°C Continuous Drain Current, Ves @ 5.0 V 11 A
IDM Pulsed Drain Current C) 60
Pr: @ To = 2500 Power Dissipation 88 W
Linear Derating Factor 0.59 WPC
Vos Gate-to-Source Voltage i10 V
EAs Single Pulse Avalanche Energy Q) 290 md
IAR Avalanche Current C) 15 A
EAR Repetitive Avalanche Energy OD 8.8 mJ
dv/dt Peak Diode Recovery dv/dt (3) 5.5 V/ns
Tu Operating Junction and -55 to +175
TSTG Storage Temperature Range “C
Soldering Temperature, for 10 seconds 300 (1.6mm from case)
Mounting Torque, 6-32 or M3 screw 10 Ibf.in (1.1 N-m)
Thermal Resistance
Parameter Min, Typ. Max, Units
Fhuc Junction-to-Case - - 1.7
Recs Case-to-Sink, Flat, Greased Surface - 0.50 - °C/W
1 Ram Junction-to-Ambient -r.. .__ 62
llRL530
Electrical Characteristics @ Tu = 25°C (unless otherwise specified)
l Parameter Min. Typ. Max. Units Test Conditions
V(BR)DSS Drain-to-Source Breakdown Voltage 100 - - V Vas---0V, lo: 250PA
AV(BR)DSS/ATJ Breakdown Voltage Temp. Coefficient - 0.14 - VPC Reference to 25°C, In: 1mA
Ros(on) Static Drain-to-Source On-Resistance - - 0.16 n Vas=5.OV, b--9.0A co
- - 0.22 Vss=4.OV, Io=7.5A ©
VGS(th) Gate Threshold Voltage 1.0 - 2.0 V VDs=VGs, ID: 250PA
gfs Forward Transconductance 6.4 - - S VDs=50V, ID--9.0A ©
loss Drain-to-Source Leakage Current - - 25 pA Vios=100V, I/ss-HN
.'.'.-.'. - 250 VDs=80V, VGS=OV, TJ=150°C
less Gate-to-Source Forward Leakage - - 100 n A Vss---10V
Gate-to-Source Reverse Leakage - - -1OO Ves=-10V
09 Total Gate Charge - - 28 |D=15A
Qgs Gate-to-Source Charge - - 3.8 nC VDS=80V
di Gate-to-Drain ("Miller") Charge - - 14 VG5=5.0V See Fig. 6 and 13 C4)
Won) Turn-On Delay Time - 4.7 - VDD=50V
tr Rise Time - 100 - ns |D=15A
tum”) Turn-Off Delay Time - 22 - Re=12Q
t: Fall Time - 48 - Re:SZQ See Figure 10 ©
Ln Internal Drain Inductance - 4.5 - ttit,v,1rJ.itie.') D
nH from package SQ:
Ls Internal Source Inductance - 7.5 - and center of
die contact s
Ciss Input Capacitance - 930 - Vss=OV
Coss Output Capacitance - 250 - pF lhos=25V
Crss Reverse Transfer Capacitance - 57 - f=1.0MHz See Figure 5
Source-Drain Ratings and Characteristics
Parameter Min. Typ. Max. Units Test Conditions
Is Continuous Source Current - - 15 MOSFET symbol D
(Body Diode) A showing the L,-,-':
ISM Pulsed Source Current - ', - 60 integral reverse G (Ir:-]
(Body Diode) C) p-n junction diode. s
Vso Diode Forward Voltage - - 2.5 V TJ=25°C, Is=15A, l/ss-s-OV ©
tr, Reverse Recovery Time - 150 200 ns TJ=250C, IF=15A
er Reverse Recovery Charge - 0.93 1.4 wc di/dt=100A/p1s ©
ton Forward Turn-On Time Intrinsic turn-on time is neglegible (turn-on is dominated by Ls+LD)
Notes:
C) Repetitive rating; pulse width limited by
max. junction temperature (See Figure 11)
© VDD=25V, starting TJ=25°C, L=1.9mH
RG=2SQ, |As=15A (See Figure 12)
© ISDS15A, di/dts140/Ws, VDDSV(BR)Dss,
TJS175°C
C4) Pulse width fi 300 Vs,' duty cycle 32%.
