IRL520S ,100V Single N-Channel HEXFET Power MOSFET in a D2-Pak packageapplications because of its low internal connection
resistance and can dissipate up to 2.0W in a t ..
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Absolute Maximum Ratings
Parameter Max. Units
ID tp To = 25''C Contin ..
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IRL520S
100V Single N-Channel HEXFET Power MOSFET in a D2-Pak package
llrtternatidnall
EOR Rectifier
HEXFET® Power MOSFET
o Surface Mount
0 Available in Tape & Reel
o Dynamic dv/dt Rating
0 Repetitive Avalanche Rated
0 Logic-Level Gate Drive
0 RDs(on) Specified at VGs=4V & 5V
0 175°C Operating Temperature
Description
Third Generation HEXFETs from International Rectifier provide the designer
with the best combination of fast switching, ruggedized device design, low
PD-9.908
IRLSZOS
VDSS = 100V
RDS(on) '3 0.279
on-resistance and cost-effectiveness.
The SMD-22O is a surface mount power package capable of accommodating
die sizes up to HEX-4. It provides the highest power capability and the lowest
possible on-resistance in any existing surface mount package. The SMD-220
is suitable for high current applications because of its low internal connection
resistance and can dissipate up to 2.0W in a typical surface mount application.
Absolute Maximum Ratings
SMD-220
Parameter Max. Units
lo © To = 25°C Continuous Drain Current, Ves @ 5.0 V 9.2
In @ Tc = 100°C Continuous Drain Current, Vss © 5.0 V 6.5 A
IDM Pulsed Drain Current (I) 36
PD @ Tc = 25°C Power Dissipation 60 W
Po @ TA = 25°C Power Dissipation (PCB Mount)" 3.7
Linear Derating Factor 0.40 W PC
Linear Derating Factor (PCB Mount)" 0.025
Vss Gate-to-Source Voltage k10 V
EAs Single Pulse Avalanche Energy © 170 mJ
IAH Avalanche Current T 9.2 A
EAR Repetitive Avalanche Energy 6) 6.0 mJ
dv/dt Peak Diode Recovery dv/dt © 5.5 V/ns
Ts Tsm Junction and Storage Temperature Range -55 to +175 °C
Soldering Temperature, for 10 seconds 300 (1.6mm from case)
Thermal Resistance
Parameter Min. Typ. Max. Units
Rmc Junction-to-Case - - 2.5
RNA Junction-to-Ambient (PCB mount)" - - 4O °C/W
Ram Junction-to-Ambient - - 62
** When mounted on 1" square PCB (FR-4 or G-10 Material).
For recommended footprint and soldering techniques refer to application note #AN-994.
IRLSZOS
Electrical Characteristics © Tu = 250C (unless otherwise specified)
Parameter Min. Typ. Max. Units _Test Conditions
V(BR)DSS Drain-to-Source Breakdown Voltage 100 - - V VGSQOV, 10: 250prA
AV(BR)DSS/ATJ Breakdown Voltage Temp. Coefficient - 0.12 - 1//0C Reference to 2500, lo: 1mA
RDS(on) Static Drain-to-Source On-Resistance - w 0,27 Q V68:5'0V' lv=5.5A ©
-TT, - 0.38 VGs=4.OV, lo=4.6A ©
VGS(th) Gate Threshold Voltage 1.0 - 2.0 V Vos:VGs, ID: 250prA
Sty, k _feo/taAr_ryeTnAucty1ct, ”g7, 3.2 - - S V03250V, |D=5.5A ©
loss Drain-to-Source Leakage Current - - 25 uA Vros---100V, Vss=0V
- - 250 VDs=80V. VGs=0V, TJ=150°C
lass Gate-to-Source Forward Leakage - - 100 n A Vissr-aliV,
- (_3pl1tp-ioyrtiis, Reverse Leakage - - -1OO VGs=-1OV
tei," - "ilir,diaFjiiirisrl_' - Lr" _ - - 12 lo=9.2A
Qgs Gate-to-Source Charge ---'. : -T- 3.0 nC VDs=80V
_% A ime-tiojDEip Chlille), gag, - - 7.1 VGs:5.0V See Fig. 6 and 13 (4)
Jam -C0yr_o-fp_el1y1T.lrpts, --__-_ - 9.8 - Voo=sov
[tr Rise Time - 64 - ns 10:9.2A
139112,. .7 Lurn-Q“ Belavjm: - 2 - - 21 - Re=9-OQ
__ 1: Fall Time - 27 - Prr--5.2n See Figure 10 ©
LD Internal Drain Inductance - 4.5 -..- t,iti,htril12fi1nd.') D
nH from package GE )
Ls Internal Source Inductance - 7.5 - and center of
die contact 3
O_ss_ ._Jn.p_ut .Cfiaflang,_ - - - ..:. -ff)0, ; Vss=OV
Coss Output Capacitance - 7 4 150 - i pF VDs=25V
frss Reverse Transfer Capacitance - 30 - f=1.0MHz See Figure 5
Source-Drain Ratings and Characteristics
- - - --- - _fy_yeer, --- Mp.E/p. Max. Units Test Conditions i
Is Continuous Source Current - - 9 2 MOSFET symbol D
-_(l3t)dytioe), - .._._._ - -- - - 21-2 A showing the
ISM Pulsed Source Current - - 36 integral feverge G
(Body Diode) co p-n junction diode. s
Vso Diode Forward Voltage - - 2.5 V TJ=25°C, Is=9.2A, Vcs=OV ©
trr 5 Reverse Recovery Time - 130 190 ns TJ=25OC, |F=9.2A
Orr Reverse Recovery Charge - 0.83 1.0 PC di/dt=100A/ps co
ton Forward Turn-On Time Intrinsic turn-on time is neglegible (turn-on is dominated by Ls+LD)
Notes:
ci) Repetitive rating; pulse width limited by
max. junction temperature (See Figure 1 1)
© VDD=25V, starting TJ=25°C, L=3.0mH
RG=25§2, IA3=9.2A (See Figure 12)
© 15059.2A, di/dtf110A/ws, VDDSV(BR)DSSy
TJS175OC
co Pulse width 3 300 us; duty cycle 32%.
