IRL520NSTRLPBF ,100V Single N-Channel HEXFET Power MOSFET in a D2-Pak packageapplications.Wuan-eDem.
bsolute Maximum Ratings
Parameter Max. Units
ID tp To = 25''C Contin ..
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resistance and can dissipate up to 2.0W in a t ..
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IRL530N ,100V Single N-Channel HEXFET Power MOSFET in a TO-220AB packageapplications at power dissipationlevels to approximately 50 watts. The low thermalresistance and l ..
IRL530NPBF ,100V Single N-Channel HEXFET Power MOSFET in a TO-220AB packageapplicationsatpowerdissipation
levels to approximately 50 watts. The low thermal
resistance and l ..
IRL530NS ,100V Single N-Channel HEXFET Power MOSFET in a D2-Pak packageapplications.Absolute Maximum RatingsParameter Max. UnitsI @ T = 25°C Continuous Drain Current, V @ ..
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IRL520NSTRLPBF
100V Single N-Channel HEXFET Power MOSFET in a TO-262 package
Internet
TOR Rectifier
PD- 95592
IRL520NSPbF
|RL520NLPbF
n Logic-Level Gate Drive
. Advanced Process Technology HEXFETD Power MOSFET
. Surface Mount (IRL520NS) D
. Low-profilethrough-hole (IRL520NL) VDSS = 100V
. 175°C Operating Temperature
. Fast Switching RDS(on) - 0.18n
. Fully Avalanche Rated ID = 10A
. Lead-Free s
Description
Fifth Generation HEXFETs from International Rectifier
utilize advanced processing techniques to achieve
extremely low orn-resistarnce per silicon area. This
benefit, combined with the fast switching speed and
ruggedized device designthat HEXFET Power MOSFEI'S _
are well known tor, provides the designerwith an extremely /tiy
efficient and reliable device tor use in a wide variety of o'
applications.
The D2Pak is a surface mount power package capable of rc2pa. To“.
accommodating die sizes up to rHEX-4. It provides the
highest power capability and the lowest possible on-
resistance in any existing surface mount package. The
D2Pa k is suitable tor high current applications because ot
its low internal connection resistance and can dissipate
up to 2.0W in a typical surface mount application.
The through-hole version (|RL520NL) is availa tale for low-
profileapplications.
Absolute Maximum Ratings
Parameter Max. Units
b e TC = 25°C Continuous Drain Current, Vss e ION/G) 10
ID Cl TC = 100°C Continuous Drain Current, I/ss Cl 10V(0 7.1 A
IDM Pulsed Drain Current OS 35
PD @TA=25°C Power Dissipation 3.8 W
PD (2Tc = 25''C Power Dissipation 48 W
Linear Derating Factor 0.32 WPC
Vss Gate-to-Source Voltage :16 V
EAg Single Pulse Avalanche Energy0)3) 85 ml
Ips; Avalanche CurrentG) 6.0 A
EAR Repetitive Avalanche Energy0) 4.8 tn)
dv/dt Peak Diode Recovery dv/dt OS 5.0 V/ns
T: Operating Junction and -55 to + 175
TSTS Storage Temperature Range T
Soldering Temperature, for 10 seconds 300 (1.6mm from case )
Thermal Resistance
Parameter Typ. Max. Units
Rch Junction-to-Case - 3.1 °C/W
RM Junctitr1-ttrAmtient( PCB Mounted,stea4rstate)" - 40
1
07/21/04
IR520NS/LPbF International
TOR Rectifier
Electrical Characteristics @ To = 25°C (unless otherwise specified)
Param eter Min. Typ. Max. Units Conditions
V(BR)DSS Drain-to-Source Breakdown Voltage 100 - - V Veg = ov, ID = 250uA
AV(BR)DSS/ATJ Breakdown Voltage Temp. Coefficient - 0.11 - Vf'C Reference to 25°C, ID = lmACs)
- - 0.18 Veg =10V, ID = 6.0A co
RD3(On) Static Drain-to-S- On-Resistance - - 0.22 n l/ss = 5.0V, IL) = 6.0A co
- - 0.26 Veg = 4.0V, ID = S.OA Cr)
VGS(th) Gate Threshold Voltage 1.0 - 2.0 V VDS = l/ss, ID = 250pA
gtt Forward Transconductance 3.1 - - S VDS = 25V, ID = 6.0A©
. - - 25 V93 = 100V, Vos = 0V
bss Drain-to-Source Leakage Current - - 250 A bbs = 80V, beer, = 0V, Tu = 150''C
less Gate-to-Source Forward Leakage - - 100 nA Veg = 16V
Gate-to-Source Reverse Leakage - - -100 l/cs = -16V
Qg Total Gate Charge - - 20 ID = 6.0A
Qgs Gate-to-Source Charge - - 4.6 nC l/vs = 80V
di Gate-to-Drain ("Miller") Charge - - 10 Vss = 5.0V, See Fig. 6 and 13 coco
td(0n) Turn-On Delay Time - 4.0 - VDD = 50V
tr Rise Time - 35 - ns ID = 6.0A
tam) Tu rn-Off Delay Time - 23 - Rs = 119, Vss = 5.0V
tr Fall Time 22 RD = 8.29, See Fig. 10 COS
Ls Internal Source Inductance - 7.5 - nH Between lead, .
and center of die contact
Css Input Capacitance - 440 - l/ss = 0V
Coss Output Capacitance - 97 - pF VDS = 25V
Crss Reverse Transfer Capacitance - 50 - f = 1.0MHz, See Fig. 5©
Source-Drain Ratings and Characteristics
Parameter Min. Typ. Max. Units Conditions
Is Continuous Source Current MOSFETsymbol C)
(Body Diode) - - 10 A showing the
ISM Pulsed Source Current integral reverse G
(Body Diode) C) - - 35 p-n junction diode. s
V30 Diode Forward Voltage - - 1.3 V T: = 25''C, Is = 6.0A, l/ss = 0V G)
trr Reverse Recovery Time - 110 160 ns Tu = 25''C, IF = 6.0A
er Reverse Recovery Charge - 410 620 nC di/dt = 100A/ps COG)
ton Forward Turn-On Time Intrinsic turn-at time is negligible (turn-on is dominated by Ls+LD)
Notes:
G) Repetitive rating; pulse width limited by @ Pulse width g 300psi duty cycle g 2%,
max. junction temperature. ( See fig. 11 )
© VDD = 25V, starting Tu-- 25''C, L = 4.7mH (5) Uses IRL520N data and test conditions
Rs = 259, IAS = 6.0A, (See Figure 12)
G) ISD I 6.OA, di/dt I MOA/ps, VDD S Vvsvss,
Tu S175°C
" When mounted on 1" square PCB ( FR-4 or G-10 Material ).
For recommended footprint and soldering techniques refer to application note #AN-994.
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