IRL520NL ,100V Single N-Channel HEXFET Power MOSFET in a TO-262 packageapplications.Absolute Maximum RatingsParameter Max. UnitsI @ T = 25°C Continuous Drain Current, V @ ..
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IRL520NS ,100V Single N-Channel HEXFET Power MOSFET in a D2-Pak packagePD - 91534IRL520NS/L®HEXFET Power MOSFETl Logic-Level Gate Drivel Advanced Process TechnologyDV = 1 ..
IRL520NSTRL ,100V Single N-Channel HEXFET Power MOSFET in a D2-Pak packageapplications.2The D Pak is a surface mount power package capable ofaccommodating die sizes up to HE ..
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bsolute Maximum Ratings
Parameter Max. Units
ID tp To = 25''C Contin ..
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IRL520NL-IRL520NS-IRL520NSTRL
100V Single N-Channel HEXFET Power MOSFET in a TO-262 package
International
TOR Rectifier
PD - 91534
|RL520NS/L
Logic-Level Gate Drive
Advanced Process Technology
Surface Mount (IRL520NS)
Low-profile through-hole (IRL520NL)
175°C Operating Temperature
Fast Switching
0 Fully Avalanche Rated
Description
Fifth Generation HEXFETs from International Rectifier
utilize advanced processing techniques to achieve
extremely low on-resistance per silicon area. This
benefit, combined with the fast switching speed and
ruggedized device design that HEXFET Power MOSFETs
arewell known for, provides the designerwith an extremely
emcient and reliable device for use in a wide variety of
applications.
The D2Pak is a surface mount power package capable of
accommodating die sizes up to HEX-4. It provides the
highest power capability and the lowest possible on-
resistance in any existing surface mount package. The
HEXFET0 Power MOSFET
VDSS = 100V
RDS(on) = 0.189
|D=10A
D2Pak is suitable for high current applications because of D 2 Pak T0462
its low internal connection resistance and can dissipate
up to 2.0W in a typical surface mount application.
The through-hole version (IRL520NL) is available for low-
profileapplications.
Absolute Maximum Ratings
Parameter Max. Units
ID @ Tc = 25°C Continuous Drain Current, Vss @ 10V© 10
ID @ Tc = 100°C Continuous Drain Current, VGS @ 10VS 7.1 A
IDM Pulsed Drain Current cos 35
PD @TA = 25°C Power Dissipation 3.8 W
Pro @To = 25°C Power Dissipation 48 W
Linear Derating Factor 0.32 W/''C
Ves Gate-to-Source Voltage $16 V
EN; Single Pulse Avalanche EnergyOS 85 m]
IAR Avalanche Current0) 6.0 A
EAR Repetitive Avalanche Energy0) 4.8 mJ
dv/dt Peak Diode Recovery dv/dt ©© 5.0 V/ns
TJ Operating Junction and -55 to + 175
TSTG Storage Temperature Range ''C
Soldering Temperature, for 10 seconds 300 (1.6mm from case )
Thermal Resistance
Parameter Typ. Max. Units
Rauc Junction-to-Case - 3.1 o
RwA Junction-to-Ambient ( PCB Mounted,steady-state)** - 40 C/W
5/13/98
IRL520NS/L
International
TOR Rectifier
Electrical Characteristics @ T J = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
V(BR)DSS Drain-to-Source Breakdown Voltage 100 - - V VGS = 0V, ID = 250pA
AV(BR)Dss/ATJ Breakdown Voltage Temp. Coemcient - 0.11 - V/°C Reference to 25°C, ID = 1mA©
- - 0.18 VGS =10V,ID = 6.0A ©
Rrosom Static Drain-to-Source On-Resistance _ - 0.22 Q VGS = 5.0V, ID = 6.0A Cr)
- - 0.26 VGS = 4.0V, lo = 5.0A (9
VGS(th) Gate Threshold Voltage 1.0 - 2.0 V Vros = Kas, ID = 250pA
git Forward Transconductance 3.1 - - S Vros = 25V, ID = 6.0AS
. - - 25 VDS = 100V, VGs = 0V
loss Drain-to-Source Leakage Current - - 250 A Vos = 80V, VGS = 0V, TJ = 150°C
less Gate-to-Source Forward Leakage - - 100 nA VGS = 16V
Gate-to-Source Reverse Leakage - - -100 VGS = -16V
09 Total Gate Charge - - 20 ID = 6.0A
Qgs Gate-to-Source Charge - - 4.6 nC Vros = 80V
di Gate-to-Drain ("Miller") Charge - - 10 Vcs = 5.0V, See Fig. 6 and 13 ©©
Won) Turn-On Delay Time - 4.0 - VDD = 50V
tr Rise Time - 35 - ns ID = 6.0A
td(off) Turn-Off Delay Time - 23 - Rs = 119, N/ss = 5.0V
tf FaIITime 22 R9 = 8.29, See Fig. 10 C06)
Ls Internal Source Inductance - 7.5 - nH Between lead, .
and center of die contact
Ciss Input Capacitance - 440 - VGs = 0V
Coss Output Capacitance - 97 - pF Vos = 25V
Crss Reverse Transfer Capacitance - 50 - f = 1.0MHz, See Fig. 5©
Source-Drain Ratings and Characteristics
Parameter Min. Typ. Max. Units Conditions
5 Continuous Source Current MOSFETsymbol D
(Body Diode) - - 10 A showing the
ISM Pulsed Source Current _ _ 35 integral reverse G
(Body Diode) C) p-n junction diode. s
Vso Diode Forward Voltage - - 1.3 V T: = 25°C, ls = 6.0A, Vss = 0V ©
trr Reverse Recovery Time - 110 160 ns TJ = 25°C, IF = 6.0A
Qrr Reverse Recovery Charge - 410 620 nC di/dt = 100/Ups COO)
ton Forward Turn-On Time Intrinsic tum-on time is negligible (tum-on is dominated by Ls+to)
Notes:
co Repetitive rating; pulse width limited by
max. junction temperature. ( See fig. 11 )
© VDD = 25V, starting TJ = 25°C, L = 4.7mH
Rs = 25n, IAS = 6.0A. (See Figure 12)
GD Pulse width 3 300ps; duty cycle 3 2%.
s Uses IRL520N data and test conditions
co ISD s 6.0A,
Tu I 175°C
di/dt f MOA/ps, VDD f V(BR)DSS!
** When mounted on I" square PCB ( FR-4 or G-10 Material ).
For recommended footprint and soldering techniques refer to application note #AN-994.
