IRL520 ,100V Single N-Channel HEXFET Power MOSFET in a TO-220AB packageInternatiqnal
TOR Rectifier
HEXFET® Power MOSFET
PD-9.561C
IRL520
. Dynamic dv/dt Rati ..
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IRL520
100V Single N-Channel HEXFET Power MOSFET in a TO-220AB package
- - - O
International
BOR Rectifier IRL520
HEXFET® Power MOSFET
PD-9.561C
Dynamic dv/dt Rating
Repetitive Avalanche Rated D -
Logic-Level Gate Drive VDSS - 100V
RDs(on) Specified at VGs=4V & 5V
175°C Operating Temperature rn RDS(on) = 0.279
Fast Switching
Ease of Paralleling s ID = 9.2A
Description
Third Generation HEXFETs from International Rectifier provide the designer
with the best combination of fast switching, ruggedized device design, low
on-resistance and cost-effectiveness.
The TO-220 package is universally preferred for all commercial-industrial
applications at power dissipation levels to approximately 50 watts. The low
thermal resistance and low package cost of the TO-220 contribute to its wide
acceptance throughout the industry.
TO-220AB
Absolute Maximum Ratings
Parameter _-'-'---.----'- _-_--- - Max. Units
lo © Tc = 25°C Continuous Drain Current, l/ss @ 5.0 V 9.2
In © To = 100°C Continuous Drain Current, l/es @ 5.0 V 6.5 A
IDM Pulsed Drain Current co - - Iii,
PD @ To = 25°C Power Dissipation 60 W
Linear Derating Factor 0.40 WPC
Ves Gate-to-Source Voltage - _ilO V
EAS Single Pulse Avalanche Energy © 170 ml
IAH Avalanche Current co 9.2 A
EAR Repetitive Avalane1E_r1_rqy G) 6.0 mJ
dv/dt Peak Diode Recovery dv/dt © _,__.,__. i.-. -.__.._5-5 V/ns
To Operating Junction and -55 to +175
TSTS “Ff 'itS_r.iIg_tCLsiy.pps_re1ty!e Rahgew °C
Soldering Temperature, for 10 seconds 300 (1.6mm from case) _
___ Mounting Torque, 6-32 or M3 screw 10 1bf-in (1.1 Nam) 1
Thermal Resistance
- Pargrhgter Min. Typ. f - Max. Units
Rmc Junction-to-Case - l - 2.5
Recs__p_w_ Case-to-Sink, Flat, Greased Surface - 0.50 -TTf" °CNV
Ram Junction-to-Ambien-t - --_-. - - 62
IRL520
Electrical Characteristics tii) TJ = 25°C (unless otherwise specified)
' Parameter Min. Typ. Max. Units Test Conditions
V(BR)DSS Drain-to-Source Breakdown Voltage i' 100 - - V VGs=0V, ID: 250uA
AV(BR)DSS/ATJ Breakdown Voltage Temp. Coefficient - V 0.12 - V/°C Reference to 25°C, In: 1mA
Roswn) Static Drain-to-Source On-Resistance - - 0.27 f2 VGs=5.01/, 10:5’5A C4D
- - 0.38 VGs=4.0V, b=4.6A ©
VGS(lh) Gate Threshold Voltage 1.0 - 2.0 V Vros=Vas, lo--- 250pA
gfs Fonrvard Transconductance 3.2 - - S VDs=50V, Io=5.5A CO
loss Drain-to-Source Leakage Current - - 25 ptA VDS=1OOV’ VGS=OV
- - 250 VDs=80V, I/tss-MN, TJ=15OOC
less Gate-to-Source Forward Leakage - - 100 n A Ves=10V
Gate-to-Source Reverse Leakage - - -1OO Vss=-10V
Qg Total Gate Charge - - 12 |o=9.2A
Qgs Gate-to-Source Charge - - 3.0 no Vos=80V
di Gate-to-Drain ("Miller") Charge - - 7.1 VGs=5.0V See Fig. 6 and 13 ©
tdmn) Turn-On Delay Time - 9.8 - lhorr=50V
t, Rise Time - 64 - ns Io=9.2A
Idiom Tum-Off Delay Time - 21 - RG=9.OQ
h Fall Time - 27 - RD=5.2§2 See Figure 10 ©
Lo Internal Drain Inductance - 4.5 - itvri'illtilnd.') é)
nH from package GE
Ls Internal Source Inductance - 7.5 - Ind center of
die contact s
Ciss Input Capacitance - 490 - Vtss=0V
Coss Output Capacitance - 150 - pF Vos=25V
Crss Reverse Transfer Capacitance - 30 - f=1.0MH2 See Figure 5
Source-Drain Ratings and Characteristics
Parameter Min. Typ. Max. Units Test Conditions
ls Continuous Source Current MOSFET symbol D
(Body Diode) - -- 9.2 A showing the
ISM Pulsed Source Current - - as integral reverse G
(Body Diode) (D p-n junction diode. s
Vso Diode Forward Voltage - - 2.5 V TJ=25°C, ls=9.2A, VGs=0V ©
tr, Reverse Recovery Time - 130 190 ns TJ=25°C, IF=9.2A
er Reverse Recovery Charge - 0.83 1.0 wo dildt=100A/ps ©
ton Forward Turn-On Time Intrinsic turn-on time is neglegible (turn-on is dominated by Ls+Lo)
Notes:
C) Repetitive rating; pulse width limited by
max. junction temperature (See Figure 11)
2 VDD=25V, starting TJ=25°C, L=3.0mH
RG=25n, IAs=9.2A (See Figure 12)
TJS175°C
s Isosg.2A, di/dts110A/ps, VDDSV(BR)DSS.
@ Pulse width f 300 Vs; duty cycle s2%.
