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IRL510S
100V Single N-Channel HEXFET Power MOSFET in a D2-Pak package
tntemattonall
Rectifier
HEXFETO Power MOSFET
Description
Third Generation HEXFETs from International Rectifier provide the designer
with the best combination of fast switching, ruggedized device design, low
Surface Mount
Available in Tape & Reel
Dynamic dv/dt Rating
Repetitive Avalanche Rated
Logic_-Level Gate Drive
RDS(on) Specified at VGS=4V & 5V
175°C Operating Temperature
PD-9.907
IRL51OS
VDSS = 100V
RDS(on) =: 0.54Q
on-resistance and cost-effectiveness.
The SMD-220 is a surface mount power package capable of accommodating
die sizes up to HEX-4. It provides the highest power capability and the lowest
possibte on-resistance in any existing surface mount package. The SMD-220
is suitable for high current applications because of its low internal connection
resistance and can dissipate up to 2.0W in a typical surface mount application.
Absolute Maximum Ratings
SMD-220
Parameter Max, Units
lo @ To = 25°C Continuous Drain Current, Ves @ 5.0 V 5.6
lo @ Tc = 100°C Continuous Drain Current, Vss @ 5.0 V 4.0 A
IDM Pulsed Drain Current C) 18
PD © To = 25°C Power Dissipation 43 W
M!) TA = 25°C Power Dissipation (PCB Mount)" 3.7
Linear Derating Factor 0.29 WPC
Linear Derating Factor (PCB Mount)" 0.025
ms l Gate-to-Source Voltage :10 V
F EAs i Single Pulse Avalanche Energy © 100 m]
IAR Avalanche Current CD 5.6 A
EAR Repetitive Avalanche Energy C) 4.3 mJ
dv/dt Peak Diode Recovery dv/dt © 5.5 V/ns
TJ, Tsm Junction and Storage Temperature Range -55 to +175 °C
Soldering Temperature, for 10 seconds 300 (1.6mm from case)
Thermal Resistance
1 1 Parameter Min. Typ. Max. Units
ReJC Junction-to-Case - - _ 3.5 -
Rem Junction-to-Ambient (PCB mount)" - - 40 °C/W
RHJA Junction-to-Ambient - - 62
" When mounted on I" square PCB (FR-4 or G-10 Material).
For recommended footprint and soldering techniques refer to application note #AN-994.
IRL510S
Electrical Characteristics tii) TJ b"-", 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Test Conditions
V(BR)Dss Drain-to-Source Breakdown Voltage 100 - - V Vss=OV, lo: 250pA
AV(BR)DSS/ATJ Breakdown Voltage Temp. Coefficient - 0.12 - V/°C Reference to 25°C, ID: 1mA
H05(on) Static Drain-to-Source On-Resistance - - 0.54 n l/tas-lov, lro=3.4A g)
- - 0.76 Ves=4.0V, 10:2.8A C4)
Vesuh) Gate Threshold Voltage 1.0 - 2.0 V VDs=Vgs, Io-- 250WA
gis Forward Transconductance 1.9 - - S Vos=50V, |D=3.4A CO
lass ' Drain-to-Source Leakage Current - - 25 PA Vros=100V, I/as-HN
. - - 250 Vns=80V, VGs=OV, TJ=150°C
lass ' Gate-to-Source Forward Leakage - ---- 100 n A VGs=10V
i Gate-to-Source Reverse Leakage - - -100 1/Gs=-10V
q, Total Gate Charge - - 6.1 b--S.6A
Qgs Gate-to-Source Charge - - 2.6 nC VDs=80V
di Gate-to-Drain ("Miller") Charge - - 3.3 VGs=50V See Fig, 6 and 13 ©
tdmn) Turn-On Delay Time - 9.3 - Voo--50V
t, Rise Time - 47 - ns lo=5.6A
tum) Turn-Off Delay Time - 16 - Re=12£2
tr Fall Time - 18 - RD=8.4Q See Figure 10 G)
La Internal Drain Inductance - 4.5 - it2trJ.itilnd.') D
- nH from package egg
Ls Internal Source Inductance - 7.5 - Ind center of
die contact s
Ciss Input Capacitance - 250 - Vss--0V
Cass Output Capacitance - 80 - PF V03: 15V
Crss Reverse Transfer Capacitance - 15 - f=1.0MHz See Figure 5
Source-Drain Ratings and Characteristics
Parameter Min. Typ. Max, Units Test Conditions
Is Continuous Source Current - - 5 6 MOSFET symbol D
(Body Diode) ' A showing the Hi:
ksu Pulsed Source Current - - 18 integral reverse G (trl]
(Body Diode) Ci) p-n junction diode. s _
Vso Diode Forward Voltage - - 2.5 V TJ=25°C, IS=5.6A, VGs=OV C4)
tn Reverse Recovery Time - 110 130 ns TJ=25N, lF=5.6A
Orr Reverse Recovery Charge - 0.50 0.65 wc di/dtsi00A/ws ©
ton Fo rward Tu rn-On Time Intrinsic turn-on time is neglegible (turn-oh is dominated by Ls+lu:)
Notes:
co Repetitive rating; pulse width limited by
max. junction temperature (See Figure 11)
© VDD=25V, starting TJ=25°C, L=4.8mH
Re=25Q, lAs=5.6A (See Figure 12)
TJS175°C
(3) ISDSSBA, di/dts75A/ps, VDDSV(BR)Dss,
co Pulse width f 300 us; duty cycle 32%.
