IRL3803VS ,30V Single N-Channel HEXFET Power MOSFET in a TO-220AB packageapplications because of its low internal connectionresistance and can dissipate up to 2.0W in a typ ..
IRL510S ,100V Single N-Channel HEXFET Power MOSFET in a D2-Pak packageapplications because of its low internal connection
resistance and can dissipate up to 2.0W in a t ..
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TOR Rectifier
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. Dynamic dv/dt Rati ..
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levels to approximately 50 watts. The low thermal
resistance and l ..
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IRL3803VS
30V Single N-Channel HEXFET Power MOSFET in a TO-262 package
PD - 94735
IRL3803VS
IRL3803VL
International
TOR Rectifier
HEXFET© Power MOSFET
o Logic-Level Gate Drive D
o Advanced Process Technology VDSS = 30V
o Surface Mount (IRL3803VS)
o Low-pro/rough-hole (IRL3803VL) rN, RDS on = 5.5mQ
o 175°C Operating Temperature G ( )
0 Fast Switching -
. Fully Avalanche Rated s ko - 140A©
Description
Advanced HEXFET® Power MOSFETs from International Rectifier
utilize advanced processing techniques to achieve extremely low on-
resistance per silicon area. This benefit, combined with the fast
switching speed and ruggedized device design that HEXFET power . I .;,
MOSFETs are well known for, provides the designer with an extremely 1r, x C 9..
efflcient and reliable device for use in a wide variety of applications. "ij'ritj)e, "
The D2Pak is a surface mount power package capable of accommodating
die sizes up to HEX-4. It providesthe highest power capability and the lowest 2
. . . . . 2 D Pak TO-262
possible on-resistance In any existing surface mount package. The D Pak
'N " _
is suitablefor high current applications because ofits low internal connection IRL3803VS IRL3803VL
resistance and can dissipate up to 2.0W in a typical surface mount
application.
Absolute Maximum Ratings
Parameter Max. Units
ID @ TC = 25°C Continuous Drain Current, VGS @ 10V 140©
ID @ TC = 100''C Continuous Drain Current, Vss @ 10V 110 A
IDM Pulsed Drain Current COO) 470
PD @TA = 25°C Power Dissipation 3.8
PD @Tc = 25°C Power Dissipation 200 W
Linear Derating Factor 1.4 W/°C
VGS Gate-to-Source Voltage * 16 V
IAR Avalanche Current(0 71 A
EAR Repetitive Avalanche Energy© 20 m]
dv/dt Peak Diode Recovery dv/dt ©© 5.0 V/ns
TJ Operating Junction and -55 to + 175
TSTG Storage Temperature Range
Soldering Temperature, tor 10 seconds 300 (1.6mm from case )
Thermal Resistance
Parameter Typ. Max. Units
ReJC Junction-to-Case - 0.74 "C/W
ReJA Junction-to-Ambient (PCB Mounted, steady state)© - 40
1
07/21/03
IRL3803VS/lRL3803VL
International
TOR Rectifier
Electrical Characteristics @ T J = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
V(BR)DSS Drain-to-Source Breakdown Voltage 30 - - V VGs = 0V, ID = 250pA
AV(BR)DSSIATJ Breakdown Voltage Temp. Coemcient - 0.028 - V/°C Reference to 25°C, ID = 1mA
. . . - - 5.5 VGs =1OV,ID = 71A (9
RDS(on) Static Drain-to-Source On-Resistance - - 7.5 mn N/ss = 4.5V, ID = 59A (9
VGS(th) Gate Threshold Voltage 1.0 - - V VDS = VGs, ID = 250pA
gfs Forward Transconductance 82 - - S VDs = 25V, ID = 71A@OD
. - - 25 A Vos = 30V, VGS = 0V
loss Drain-to-Source Leakage Current - - 250 p Vos = 24V, VGS = 0V, To = 150°C
Gate-to-Source Forward Leakage - - 100 VGs = 16V
less Gate-to-Source Reverse Leakage - - -100 nA N/ss = -16V
Qg Total Gate Charge - - 76 ID = 71A
Qgs Gate-to-Source Charge - - 19 nC Vros = 24V
di Gate-to-Drain ("Miller") Charge - - 35 Vcs = 4.5V, See Fig. 6 and 13
tam) Turn-On Delay Time - 16 - VDD = 15V
tr Rise Time - 180 - ID = 71A
td(ott) Turn-Off Delay Time - 29 - Rs = 1.39
tf Fall Time - 37 - VGS = 4.5V, See Fig. IO (0.
Lo Internal Drain Inductance - 4.5 - Between Isad, D
6mm (0.25in.)
nH from package GE )
Ls Internal Source Inductance - 7.5 - .
and center of die contact s
Ciss Input Capacitance - 3720 - N/ss = 0V
Coss Output Capacitance - 1480 - N/rss = 25V
Crss Reverse Transfer Capacitance - 270 - pF f = 1.0MHz, See Fig. 5
EAS Single Pulse Avalanche Energy©© - 1560C400© mJ IAS = 71A, L = 0.16mH
Source-Drain Ratings and Characteristics
Parameter Min. Typ. Max. Units Conditions
Is Continuous Source Current MOSFET symbol D
(Body Diode) _ _ 140© A showing the
ISM Pulsed Source Current - - 470 integral reverse G
(Body Diode)C) p-n junction diode. s
VSD Diode Forward Voltage - - 1.2 V TJ = 25°C, ls = 71A, VGS = 0V ©
tn Reverse Recovery Time - 52 78 ns TJ = 25°C, IF = 71A
G, Reverse Recovery Charge - 91 140 no di/dt = 100A/us ©C9
ton Forward Turn-On Time Intrinsic tum-on time is negligible (turn-on is dominated by L3+LD)
Notes:
co Repetitive rating; pulse width limited by
max.junctiontempera1ure. (See ftg. 11)
© Starting To-- 25°C, L = 160pH
Rs = 259, IAS= 71A, VGS=10V (See Figure 12)
© Iso S 71A, dl/dtS110A/HS,VDD S V(BR)DSS'
TJg175°c
© Pulse width S 400ps; duty cycle S 2%.
s This is a typical value at device destruction and
represents operation outside rated limits.
© This is a calculated value limited to To = 175°C .
© Calculated continuous current based on maximum allowable
junction temperature. Package limitation current is 75A.
Uses IRL3803 data and test conditions.
© This is applied to D2Pak, when mounted on I" square PCB
(FR-4 or G-IO Material ). For recommended footprint and
soldering techniques refer to application note #AN-994.
