IRL3803STRLPBF ,30V Single N-Channel HEXFET Power MOSFET in a D2-Pak packageapplications.Wm' Ti?i6Lte Maximum Ratings
Parameter Max. Units
l, © Tc = 25°C Continuous Drain ..
IRL3803STRRPBF ,30V Single N-Channel HEXFET Power MOSFET in a D2-Pak packageInternational
TOR Rectifiera Demo
Logic-Level Gate Drive
Advanced Process Technology
Surfac ..
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IRL3803STRLPBF-IRL3803STRRPBF
30V Single N-Channel HEXFET Power MOSFET in a D2-Pak package
International
:raRIectifier
. Lead-Free
Description
Logic-Level Gate Drive
Advanced Process Technology
Surface Mount (IRL3803S)
Low-profile through-hole (I RL3803L)
175°C Operating Temperature
Fast Switching
FuIIyAvalanche Rated
Fifth Generation HEXFETs from International Rectifier
utilize advanced processing techniques to achieve
extremely low
on-resistance per silicon area This
benefit, combined with the fast switching speed and
ruggedized device design thatHEXFET Power MOSFETS
are well known for, provides the designer with an extremely
efficient and reliable device for use in a wide variety of
applications.
The D2Pak is a surface mount power package capable of
accommodating die sizes up to HEX-4. It provides the
highest power capability and the lowest possible on-
resistanoe in any existing surface mount package. The
D2Pak is suitable for high current applications because of
its low internal connection resistance and can dissipate
up to 2.0W in a typical surface mount application.
The through-hole version (lRLBBOBL) is available for low-
profile applications
Absoidte Maximum Ratings
PD-95101A
IRL3803SPbF
IRL3803LPbF
HEXFET® Power MOSFET
D VDSS = 30V
RDS(on) = 0.0069.
ID = 14OA©
Parameter Max. Units
ID tt Tc = 25''C Continuous Drain Current, VGS tt ION/S 140©
ID Q) Tc = 100°C Continuous Drain Current, VGS tt 10V© 98© A
IDM Pulsed Drain Current (DC 470
PD@TA= 25''C Power Dissipation 3.8 W
PD@TC = 25''C Power Dissipation 200 W
Linear Derating Factor 1 2 Wl°C
Ves Gate-to-Source Voltage A16 V
EAS Single Pulse Avalanche Energy®© 610 m]
IAR Avalanche Current® 71 A
EAR Repetitive Avalanche EnergyCD 20 m]
dv/dt Peak Diode Recovery dv/dt (3)(S) 5.0 V/ns
TJ Operating Junction and -55 to + 175
Tsro Storage Temperature Range °c
Soldering Temperature, for 10 seconds 300 (1.6mm from case)
Thermal Resistance
Parameter Typ. Max. Units
RQJC Junction-to-Case - 0.75 o
ReJA Junction-to-Ambient ( PCB Mounted,steady-state)" - 40 CAN
1
12/9/04
IRL3803S/LPbF International
TOR Rectifier
Electrical Characteristics ti) T J = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
V(BR)DSS Drain-to-Source Breakdown Voltage 30 - - V VGS = W, ID = 250pA
AVtBR)DsS/ATJ Breakdown Voltage Temp. Coefficient - 0.052 - V/°C Reference to 25''C, ID = 1mA@
. . . - - 0.006 VGS =10V, ID = 71A (4)
RDS(on) Static Drain/o-Source On-Resistance - - 0.009 Q Ves = 4.W, lo = 59 A G)
VGS(th) Gate Threshold Voltage 1 .0 - V 1/ros = VGS, ID = 250pA
ge Forward Transconductance 55 - - S VDS = 25V, ID = 71A©
V - - 25 Vos = 30V, N/ss = OV
bss Drain-to-Source Leakage Current - - 250 pA VDS = 24V, Ves = 0V, TJ = 150''C
Gate-to-Source Forward Leakage - - 100 VGS = 16V
IGSS Gate-to-Source Reverse Leakage - - -100 nA l/os = -16V
Qg Total Gate Charge - - 140 ID = 71A
Q95 Gate-to-Source Charge - - 41 nC VDS = 24V
di Gate-to-Drain ("Miller") Charge - - 78 l/rss = 4.5V, See Fig. 6 and 13 6)6)
tdion) Turn-On Delay Time - 14 - VDD = 15V
tr RiseTime - 230 - ID = 71A
tdiott) Turn-Off Delay Time - 29 - Rs = 1.3n
tr FalITime - 35 - RD = 0.209, See Fig. 10 C)(S)
Ls Internal Source Inductance - 7.5 - nH Between lead,
and center of die contact
Ciss Input Capacitance - 5000 - Vos = 0V
Cass Output Capacitance - 1800 - pF VDS = 25V
Crss Reverse Transfer Capacitance - 880 - f = 1.0MH2, See Fig. "
Source-Drain Ratings and Characteristics
Parameter Min. Typ. Max. Units Conditions
ls Continuous Source Current MOSFETsymboI C)
(Body Diode) - - 140© A showing the l
ISM Pulsed Source Current integral reverse G
(Body Diode) C) - - 470 p-n junction diode. s
VSD Diode Forward Voltage - - 1.3 V T: = 25''C, ls = 71A, Vcs = 0V Cr)
trr Reverse Recovery Time - 120 180 ns T: = 25''C, IF = 71A
0.. Reverse Recovery Charge - 450 680 nC di/dt = 100A/ps (9(S)
ton Forward Turn-On Time Intrinsic turn-on time is negligible (turn-on is dominated by Ls+ Lc)
Notes:
C) Repetitive rating; pulse width limited by (il) Pulse width C 300ps; duty cycle C 2%.
max. junction temperature. ( See fig. 11 )
© VDD= 15V,starting T: = 25°C, L = 180pH (S) Uses IRL3803 data and test conditions.
Rs = 25f2, IAS-- 71A. (See Figure 12) © Calculated continuous current based on maximum allowable
© Iso I 71A, di/dt s 130A/ps, V00 I VcsR)css, junction terytraterelor repommended current-handling of the
TJS 175''C package refer to Design Tip # 93-4
hh When mounted on 1" square PCB ( FR-4 or G-10 Material ).
For recommended footprint and soldering techniques refer to application note 'AN-994.
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