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IRL3716-IRL3716S
20V Single N-Channel HEXFET Power MOSFET in a TO-220AB package
International
Tait Rectifier
Applications
o High Frequency Isolated DC-DC
Converters with Synchronous Rectification
for Telecom and Industrial Use
q High Frequency Buck Converters for
Computer Processor Power
SMPS MOSFET
PD - 94403A
IRL3716
IRL3716S
IRL3716L
HEXFET® Power MOSFET
RDS(on) max
0 Active Oring
Benefits
q Ultra-Low Gate Impedance
0 Very Low RDS(on) at 4.5V I/ss
0 Fully Characterized Avalanche Voltage
TO-220AB D2Pak TO-262
and Current IRL3716 IRL3716S IRL3716L
Absolute Maximum Ratings
Symbol Parameter Max. Units
Vos Drain-Source Voltage 20 V
VGS Gate-to-Source Voltage * 20 V
ID @ TC = 25°C Continuous Drain Current, VGS @ 10V 180©
lo @ Tc = 100''C Continuous Drain Current, VGS @ 10V 130 A
IDM Pulsed Drain CurrentC) 720
pr, @Tc = 25°C Maximum Power Dissipation© 210 W
PD @Tc = 100°C Maximum Power Dissipation® 100 W
Linear Derating Factor 1.4 Wl°C
To , TSTG Junction and Storage Temperature Range -55 to + 175 "C
Thermal Resistance
Parameter Typ. Max. Units
Rsuc Junction-to-Case® - 0.72
Rscs Case-to-Sink, Flat, Greased Surface © 0.50 - °CNV
ROJA Junction-to-Ambient) - 62
ReJA Junction-to-Ambient (PCB mount)© - 40
Notes C) through C) are on page 11
1
10/8/04
IRL3716/3716S/3716L International
TOR Rectifier
Static @ T J = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
V(BR)DSS Drain-to-Source Breakdown Voltage 20 - - V VGs = 0V, ID = 250PA
AV(BR)DSS/ATJ Breakdown Voltage Temp. Coemcient - 0.021 - V/°C Reference to 25°C, ID = 1mA
. . . - 3.0 4.0 VGS = 10V, ID = 90A ©
Roswn) Static Drain-to-Source On-Resistance - 4.0 4.8 mn I/cs = 4.5V, ID = 72A ©
VGS(th) Gate Threshold Voltage 1.0 - 3.0 V Vos = VGs, ID = 250PA
loss Drain-to-Source Leakage Current - - 20 pA Ws = 16V, VGS = 0V
- - 250 Vros = 16V, VGS = 0V, Tu = 125°C
I Gate-to-Source Forward Leakage - - 200 n A VGs = 16V
GSS Gate-to-Source Reverse Leakage - - -200 VGs = -161/
Dynamic @ Tu = 25°C (unless otherwise specified)
Symbol Parameter Min. Typ. Max. Units Conditions
git Forward Transconductance 100 - - S Vos = 10V, ID = 72A
Qg Total Gate Charge - 53 79 ID = 72A
095 Gate-to-Source Charge - 17 26 nC Vos = 16V
di Gate-to-Drain ("Miller") Charge - 24 35 l/ss = 4.5V
Qoss Output Gate Charge - 50 75 Vss = 0V, Ws = 10V
Ru Gate Resistance 1.5 Q
tdmm Turn-On Delay Time - 18 - ns VDD = 10V
tr Rise Time - 140 - ID = 72A
tsom Turn-Off Delay Time - 38 - Rs = 3.99
tf Fall Time - 36 - VGS = 4.5V ©
Ciss Input Capacitance - 5090 - VGs = 0V
Coss Output Capacitance - 3440 - pF Vros = 10V
Crss Reverse Transfer Capacitance - 560 - f = 1.0MHz
Avalanche Characteristics
Symbol Parameter Typ. Max. Units
EAS Single Pulse Avalanche Energy© - 640 mJ
IAR Avalanche CurrentCD - 72 A
Diode Characteristics
Symbol Parameter Min. Typ. Max. Units Conditions
Is Continuous Source Current C6 MOSFET symbol D
(Body Diode) - - 180 A showing the
ISM Pulsed Source Current 720 integral reverse G
(Body Diode) OD - - p-n junction diode. s
I/sn Diode Forward Voltage - 0.93 1.3 v TJ = 25°C, Is = 72A, VGS = OV ©
- 0.80 - TJ =125°C, Is = 72A, VGS = 0V ©
tn Reverse Recovery Time - 180 280 ns T: = 25°C, IF = 72A, VR=20V
er Reverse Recovery Charge - 87 130 no di/dt=100A/ps ©
trr Reverse Recovery Time - 190 280 ns TJ = 125°C, IF = 72A, VR=20V
Qrr Reverse Recovery Charge - 85 130 nC dildt=100Alps ©
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