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IRL3715ZCL-IRL3715ZCS
20V Single N-Channel HEXFET Power MOSFET in a TO-262 package
International
TOR Rectifier
Applications
q High Frequency Synchronous Buck
Converters for Computer Processor Power
Benefits
0 Low RDS(on) at 4.5V VGS
o Ultra-Low Gate Impedance
q Fully Characterized Avalanche Voltage
and Current
Absolute Maximum Ratings
PD - 94783
IRL3715ZCS
IRL3715ZCL
HEXFET® Power MOSFET
VDss RDS(on) max 09
20V 11mQ 7.0nC
D2Pak TO-262
IRL3715ZCS IRL3715ZCL
Parameter Max. Units
Vos Drain-to-Source Voltage 20 V
VGS Gate-to-Source Voltage , 20
ID @ Tc = 25°C Continuous Drain Current, VGS @ 10V 50 s A
ID @ TC = 100°C Continuous Drain Current, I/ss @ 10V 36 Cs)
IBM Pulsed Drain Current co 200
PD @Tc = 25''C Maximum Power Dissipation 45 W
PD @Tc = 100°C Maximum Power Dissipation 23
Linear Derating Factor 0.30 W/°C
T J Operating Junction and -55 to + 175 ''C
TSTG Storage Temperature Range
Soldering Temperature, for 10 seconds
300 (1.6mm from case)
Thermal Resistance
Parameter Typ. Max. Units
ROJC Junction-to-Case - 3.33 ''C/W
ROJA Junction-to-Ambient (PCB Mount) GD - 40
Notes OD through s are on page 11
1
9/15/03
IRL3715ZCS/L
Static @ T J = 25°C (unless otherwise specified)
International
TOR ilectifier
Parameter Min. Typ. Max. Units Conditions
BVDSS Drain-to-Source Breakdown Voltage 20 - - V Vss = 0V, ID = 250pA
ABI/ross/AT: Breakdown Voltage Temp. Coemcient - 0.014 - V/°C Reference to 25°C, ID = 1mA
RDS(on) Static Drain-to-Source On-Resistance - 9.2 11 mn VGS = 10V, ID = 15A ©
- 12.4 15.5 Vss = 4.5V, ID = 12A ©
VGS(Ih) Gate Threshold Voltage 1.65 2.1 2.55 V Vos = Vss, ID = 250pA
AVGS(th)/ATJ Gate Threshold Voltage CoefMient - -5.2 - mV/°C
loss Drain-to-Source Leakage Current - - 1.0 pA Vros = 16V, VGS = 0V
- - 150 Vos = 16V, I/ss = 0V, TJ = 125°C
lass Gate-to-Source Forward Leakage - - 100 nA VGS = 20V
Gate-to-Source Reverse Leakage - - -100 Vss = -20V
gfs Forward Transconductance 31 - - S Vos = 10V, ID = 12A
09 Total Gate Charge - 7.0 11
Qgs1 Pre-Vth Gate-to-Source Charge - 2.1 - Vros = 10V
Qgs2 Post-N/th Gate-to-Source Charge - 0.9 - nC VGS = 4.5V
di Gate-to-Drain Charge - 2.3 - ID = 12A
ngdr Gate Charge Overdrive - 1.7 - See Fig. 16
st Switch Charge (Qgs2 + di) - 3.2 -
Qoss Output Charge - 3.7 - nC Vos = 10V, vGS = 0v
tum) Turn-On Delay Time - 7.1 - VDD = 10V, I/ss = 4.5V ©
t, Rise Time - 44 - ID = 12A
tum) Turn-Off Delay Time - 11 - ns Clamped Inductive Load
t, Fall Time - 4.6 -
Ciss Input Capacitance - 870 - Vss = 0V
Cass Output Capacitance - 270 - pF Vos = 10V
Crss Reverse Transfer Capacitance - 140 - f = 1.0MHz
Avalanche Characteristics
Parameter
Diode Characteristics
Parameter Min. Typ. Max. Units Conditions
ls Continuous Source Current - - 50 © MOSFET symbol D
(Body Diode) A showing the
ISM Pulsed Source Current - - 200 integral reverse G
(Body Diode) T p-n junction diode. S
Vso Diode Forward Voltage - - 1.0 V TJ = 25°C, IS = 12A, VGS = 0V ©
t, Reverse Recovery Time - 9.1 14 ns To = 25°C, IF = 12A, VDD = 10V
ar, Reverse Recovery Charge - 2.2 3.3 nC di/dt = 100A/ps ©
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