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IRL3714-IRL3714L-IRL3714S
20V Single N-Channel HEXFET Power MOSFET in a TO-220AB package
PD - 94175A
International
2 fl ifi IRL3714
TOR ech ler SMPS MOSFET IRL3714S
IRL3714L
HEXFET® Power MOSFET
Applications
0 High Frequency Isolated DC-DC Voss RDS(on) max ID
Converters with Synchronous Rectification 20V 20mg 36A
for Telecom and Industrial Use
0 High Frequency Buck Converters for
Computer Processor Power
Benefits P JP n
, Ts . é"
o Ultra-Low Gate Impedance 's, V
0 Very Low RDS(on) at 4.5V VGS
o F II h r rized Avalanche Volta e
u y C a acte g TO-220AB D2Pak TO-262
and Current IRL3714 IRL3714S IRL3714L
Absolute Maximum Ratings
Symbol Parameter Max. Units
Vos Drain-Source Voltage 20 V
VGS Gate-to-Source Voltage , 20 V
ID @ TC = 25°C Continuous Drain Current, VGS @ 10V 36
ID @ Tc = 70''C Continuous Drain Current, VGS @ 10V 31 A
IDM Pulsed Drain CurrentCD 140
pr, @Tc = 25°C Maximum Power Dissipation© 47 W
PD @Tc = 70°C Maximum Power Dissipation© 33 W
Linear Derating Factor 0.31 W/°C
TJ , TSTG Junction and Storage Temperature Range -55 to + 175 °C
Thermal Resistance
Parameter Typ. Max. Units
ReJC Junction-to-Case - 3.2
Recs Case-to-Sink, Flat, Greased Surface © 0.50 - ”CNV
ReJA Junction-to-Ambient) - 62
ReJA Junction-to-Ambient (PCB mount)S - 40
Notes C) through © are on page 11
1
06/19/01
IRL3714/3714S/3714L International
TOR Rectifier
Static @ T J = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
V(BR)DSS Drain-to-Source Breakdown Voltage 20 - - V VGS = 0V, ID = 250pA
AV
Roswn) Static Drain-to-Source On-Resistance - 15 20 mn VGS = 10V, ID = 18A ©
- 21 28 VGS = 4.5V, ID = 14A ©
VGS(th) Gate Threshold Voltage 1.0 - 3.0 V VDS = VGS, ID = 250pA
loss Drain-to-Source Leakage Current - - 20 y A Vos = 16V, VGS = 0V
- - 100 Vos = 16V, N/ss = 0V, TJ = 125°C
less Gate-to-Source Forward Leakage - - 200 n A VGs = 16V
Gate-to-Source Reverse Leakage - - -200 VGS = -16V
Dynamic @ Tu = 25°C (unless otherwise specified)
Symbol Parameter Min. Typ. Max. Units Conditions
gis Forward Transconductance 17 - - S Vos = 10V, ID = 14A
09 Total Gate Charge - 6.5 9.7 ID = 14A
Qgs Gate-to-Source Charge - 1.8 - nC Vros = 10V
qu Gate-to-Drain ("Miller") Charge - 2.9 - VGs = 4.5V
Qoss Output Gate Charge - 7.1 - VGS = 0V, VDS = 10V
taon) Turn-On Delay Time - 8.7 - VDD = 10V
tr Rise Time - 78 - ns lo = 14A
tdmfn Turn-Off Delay Time - 10 - Rs = 1.89
tr Fall Time - 4.5 - Vss = 4.5V ©
Ciss Input Capacitance - 670 - VGS = 0V
Coss Output Capacitance - 470 - VDS = 10V
Crss Reverse Transfer Capacitance - 68 - pF f = 1.0MHz
Avalanche Characteristics
Symbol Parameter Typ. Max. Units
EAS Single Pulse Avalanche Energy© - 72 mJ
IAR Avalanche CurrentC0 - 14 A
Diode Characteristics
Symbol Parameter Min. Typ. Max. Units Conditions
Is Continuous Source Current - 36 - MOSFET symbol D
(Body Diode) A showing the
ISM Pulsed Source Current 140 - integral reverse G
(Body Diode) C) p-n junction diode. s
Vso Diode Forward Voltage - - 1.3 V TJ = 2S'C, ls = 18A, VGS = 0V s
- 0.88 - TJ =125°C, Is =18A,VGS = 0V ©
tn Reverse Recovery Time - 35 53 ns T: = 25°C, IF = 18A, VR=10V
er Reverse Recovery Charge - 34 51 nC di/dt=100A/ps ©
trr Reverse Recovery Time - 35 53 ns TJ = 125°C, IF = 18A, VR=10V
Qrr Reverse Recovery Charge - 35 53 n0 dildt=100Alps ©
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