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IRL3705NSTRLPBF
55V Single N-Channel HEXFET Power MOSFET in a TO-262 package
PD - 95381
IRL3705NSPbF
IRL3705NLPbF
HEXFET© Power MOSFET
International
TOR Rectifier
Logic-Level Gate Drive
Advanced Process Technology
Surface Mount (IRL3705NS)
Low-profile through-hole (IRL3705NL)
175°C Operating Temperature
Fast Switching
Fully Avalanche Rated
o Lead-Free G
Description
Fifth Generation HEXFETs from International Rectifier
utilize advanced processing techniques to achieve s
extremely low on-resistance per silicon area. This
benefit, combined with the fast switching speed and
ruggedized device design that HEXFET Power MOSFETs
are well known for, provides the designer with an extremely
efficient and reliable device for use in a wide variety of
applications.
The D2Pak is a surface mount power package capable of
accommodating die sizes up to HEX-4. It provides the
highest power capability and the lowest possible on-
resistance in any existing surface mount package. The
D2Pak is suitable for high current applications because of
its low internal connection resistance and can dissipate
up to 2.0W in a typical surface mount application.
The through-hole version (IRL3705NL) is available for low-
profileapplications.
Absolute Maximum Ratings
VDSS = 55V
" RDS(on) = 0.019
ID = 89A©
D 2 Pak TO-262
Parameter Max. Units
ID @ Tc = 25°C Continuous Drain Current, Vss @ 10V© 89©
ID @ To = 100''C Continuous Drain Current, Vss @ 10V© 63 A
IDM Pulsed Drain Current (M9 310
Pro @TA = 25''C Power Dissipation 3.8 W
Pro @Tc = 25°C Power Dissipation 170 W
Linear Derating Factor 1.1 W/°C
Vss Gate-to-Source Voltage 1 16 V
Eps; Single Pulse Avalanche EnergyOS 340 ml
IAR Avalanche CurrentCD 46 A
EAR Repetitive Avalanche Energy0) 1.7 tttl
dv/dt Peak Diode Recovery dv/dt ©© 5.0 V/ns
TJ Operating Junction and -55 to + 175
TSTG Storage Temperature Range °c
Soldering Temperature, for 10 seconds 300 (1.6mm from case )
Thermal Resistance
Parameter Typ. Max. Units
Rouc Junction-to-Case - 0.90 a
Ram Junction-to-Ambient ( PCB Mounted,steady-state)" - 40 CMI
06/08/04
IRL3705NS/LPbF
International
TOR Rectifier
Electrical Characteristics @ T J = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
V(BR)Dss Drain-to-Source Breakdown Voltage 55 - - V Ves = 0V, ID = 250pA
AV(BR)Dss/ATJ Breakdown Voltage Temp. Coefficient - 0.056 - V/''C Reference to 25°C, ID = 1mA©
- - 0.010 Veg =10V, ID = 46A 6)
RDS(on) Static Drain-to-Source On-Resistance - - 0.012 Q Vcs = 5.0V, ko = 46A ©
- - 0.018 VGS = 4.0V, ID = 39A (9
VGS(th) Gate Threshold Voltage 1.0 - 2.0 V V95 = VGs, ID = 250PA
gig Forward Transconductance 50 - - S Vos = 25V, ID = 46A©
. - - 25 Vos = 55V, VGS = 0V
loss Drain-to-Source Leakage Current - - 250 PA Vos = 4 4V, Vss = 0V, Tu = 150°C
loss Gate-to-Source Forward Leakage - - 100 nA Veg = 16V
Gate-to-Source Reverse Leakage - - -100 VGS = -16V
% Total Gate Charge - - 98 ID = 46A
095 Gate-to-Source Charge - - 19 nC V95 = 44V
di Gate-to-Drain ("Miller") Charge - - 49 l/ss = 5.0V, See Fig. 6 and 13 (96)
td(on) Turn-On Delay Time - 12 - VDD = 28V
tr Rise Time - 140 - ns ID = 46A
tam) Turn-Off Delay Time - 37 - Rs = 1.89, VGS = 5.0V
tt FallTime 78 RD = 0.599, See Fig. 10 coco
LS Internal Source Inductance - 7.5 - nH Between lead, .
and center of die contact
Ciss Input Capacitance - 3600 - VGS = 0V
Coss Output Capacitance - 870 - pF Vros = 25V
Crss Reverse Transfer Capacitance - 320 - f = 1.0MHz, See Fig. 5©
Source-Drain Ratings and Characteristics
Parameter Min. Typ. Max. Units Conditions
k; Continuous Source Current MOSFETsymbol D
(Body Diode) - - 89© A showing the
ISM Pulsed Source Current integral reverse G
(Body Diode) OD - - 310 p-n junction diode. s
N/so Diode Forward Voltage - - 1.3 V Tu = 25°C, Is = 46A, N/ss = 0V (9
trr Reverse Recovery Time - 94 140 ns Tu = 25''C, h: = 46A
Qrr Reverse Recovery Charge - 290 440 nC di/dt = 100A/ps COS
ton Forward Turn-On Time Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Notes:
G) Repetitive rating; pulse width limited by B) Pulse width s: 300ps; duty cycle S 2%.
max. junction temperature. ( See fig. 11 )
C) VDD = 25v, starting TJ = 25°c, L = 320pH (S) Uses IRL3705N data and test conditions
Rs = 259, IAS= 46A. (See Figure 12)
co Calculated continuous current based on maximum allowable
Cl) ISD S 46A, di/dt S 250/Ups, VDD S V(BR)DSS:
TJS 175°C package refer to Design Tip ' 93-4
** When mounted on 1" square PCB ( FR-4 or G-10 Material ).
For recommended footprint and soldering techniques refer to application note #AN-994.
junction temperature; tor recommended current-handling of the
