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IRL3705NS
55V Single N-Channel HEXFET Power MOSFET in a TO-262 package
International
TOR Rectifier
PD - 91502C
IRL3705NS/L
Logic-Level Gate Drive
Advanced Process Technology
Surface Mount (IRL3705NS)
Low-profile through-hole (|RL3705NL)
175°C Operating Temperature
Fast Switching
0 Fully Avalanche Rated
Description
Fifth Generation HEXFETs from International Rectifier
utilize advanced processing techniques to achieve
extremely low on-resistance per silicon area. This
benefit, combined with the fast switching speed and
ruggedized device design that HEXFET Power MOSFETs
arewell known for, provides the designerwith an extremely
emcient and reliable device for use in a wide variety of
applications.
The D2Pak is a surface mount power package capable of
accommodating die sizes up to HEX-4. It provides the
highest power capability and the lowest possible on-
resistance in any existing surface mount package. The
HEXFET0 Power MOSFET
VDSS = 55V
RDS(on) = 0.019
ID = 89A©
D2Pak is suitable for high current applications because of D 2 Pak T0462
its low internal connection resistance and can dissipate
up to 2.0W in a typical surface mount application.
Thethrough-hole version (|RL3705NL) is available for low-
profileapplications.
Absolute Maximum Ratings
Parameter Max. Units
ID © Tc = 25°C Continuous Drain Current, VGS @ 10VS 89©
ID @ To = 100°C Continuous Drain Current, Ves @ 10V© 63 A
IDM Pulsed Drain Current (D6) 310
Pro @TA = 25°C Power Dissipation 3.8 W
Pro @Tc = 25°C Power Dissipation 170 W
Linear Derating Factor 1.1 W/°C
VGS Gate-to-Source Voltage i 16 V
EN; Single Pulse Avalanche Energy©© 340 m1
IAR Avalanche Current0) 46 A
EAR Repetitive Avalanche Energy© 1.7 mJ
dv/dt Peak Diode Recovery dv/dt ©© 5.0 V/ns
TJ Operating Junction and -55 to + 175
TSTG Storage Temperature Range 'C
Soldering Temperature, tor 10 seconds 300 (1.6mm from case )
Thermal Resistance
Parameter Typ. Max. Units
ReJC Junction-to-Case - 0.90 a
Ras Junction-to-Ambient ( PCB Mounted,steady-state)" - 40 C/W
5/12/98
IRL3705NS/L International
TOR Rectifier
Electrical Characteristics @ T J = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
V(BR)DSS Drain-to-Source Breakdown Voltage 55 - - V VGS = 0V, ID = 250PA
AV(BR)DSSIATJ Breakdown Voltage Temp. Coemcient - 0.056 - V/°C Reference to 25°C, ID = 1mAS
- - 0.010 VGS =10V,ID = 46A ©
RDSM Static Drain-to-Source On-Resistance - - 0.012 Q Vss = 5.0V, ID = 46A ©
- - 0.018 Vss = 4.0V, ID = 39A ©
Vesuh) Gate Threshold Voltage 1.0 - 2.0 V Vros = VGs, ID = 250pA
git Forward Transconductance 50 - - S Vros = 25V, ID = 46AS
. - - 25 Vos = 55V, VGS = 0V
loss Drain-to-Source Leakage Current - _ 250 HA Vos = 44V, VGS = 0V, TJ = 150°C
less Gate-to-Source Forward Leakage - - 100 n A N/ss = 16V
Gate-to-Source Reverse Leakage - - -100 Vss = -16V
A Total Gate Charge - - 98 ID = 46A
As Gate-to-Source Charge - - 19 nC Vros = 44V
di Gate-to-Drain ("Miller") Charge - - 49 VGS = 5.0V, See Fig. 6 and 13 ©(9
Gon) Turn-On Delay Time - 12 - VDD = 28V
t, Rise Time - 140 - ns ID = 46A
tdom Turn-Off Delay Time - 37 - Rs = 1.89, Vss = 5.0V
tr FallTime 78 RD = 0.599, See Fig. 10 ©S
Ls Internal Source Inductance - 7.5 - nH Between lead, .
and center of die contact
Ciss Input Capacitance - 3600 - VGs = 0V
Coss Output Capacitance - 870 - pF Vros = 25V
Crss Reverse Transfer Capacitance - 320 - f = 1.0MHz, See Fig. 56)
Source-Drain Ratings and Characteristics
Parameter Min. Typ. Max. Units Conditions
b Continuous Source Current MOSFETsymbol D
(Body Diode) - - 89© A showing the
ISM Pulsed Source Current integral reverse G
(Body Diode) (D - - 310 p-n junction diode. s
I/so Diode Forward Voltage - - 1.3 V TJ = 25°C, Is = 46A, Vss = 0V ©
tn Reverse Recovery Time - 94 140 ns T: = 25°C, IF = 46A
Qrr Reverse Recovery Charge - 290 440 no di/dt = 100A/us (96)
ton Forward Tum-On Time Intrinsic tum-on time is negligible (turn-on is dominated by LS+LD)
Notes:
co Repetitive rating; pulse width limited by © Pulse width S 300ps; duty cycle S 2%.
max. junction temperature. (See fig. 11 )
© l/DD = 25V, starting Tu = 25°C, L = 320pH s Uses IRL3705N data and test conditions
Rs = 259, 'As = 46A. (See Figure 12)
. © Calculated continuous current based on maximum allowable
© Iso I 46A, di/dt I 250A/ps, VDD I V(BR)DSS, junction temperature; tor recommended current-handling of the
TJ S 175°C package refer to Design Tip ' 93-4
** When mounted on 1" square PCB ( FR-4 or G-10 Material ).
For recommended footprint and soldering techniques refer to application note #AN-994.
