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IRL3705N -IRL3705NPBF
55V Single N-Channel HEXFET Power MOSFET in a TO-220AB package
International
oisatR3ctifier
PD - 9.137OC
IRL3705N
Logic-Level Gate Drive
Advanced Process Technology
Dynamic dv/dt Rating
175°C Operating Temperature
Fast Switching
o Fully Avalanche Rated
Description
Fifth Generation HEXFETs from International Rectifier
utilize advanced processing techniques to achieve
extremely low on-resistance per silicon area. This
benefit, combined with the fast switching speed and
ruggedized device design that HEXFET Power
MOSFETs are well known for, provides the designer
with an extremely efficient and reliable device for use
in a wide variety of applications.
The TO-220 package is universally preferred for all
commerciaI-industrial applications at powerdissipation
levels to approximately 50 watts. The low thermal
HEXFET® Power MOSFET
VDSS = 55V
RDS(on) = 0.019
ID = 89Aeo
resistance and low package cost of the TO-220 TO-220AB
contribute to its wide acceptance throughout the
industry.
Absolute Maximum Ratings
Parameter Max. Units
ID @ To = 25°C Continuous Drain Current, VGS @ 10V 890D
ID @ Tc = 100°C Continuous Drain Current, VGS @ 10V 63 A
IDM Pulsed Drain Current co 310
PD @Tc = 25''C Power Dissipation 170 W
Linear Derating Factor 1.1 W/°C
VGS Gate-to-Source Voltage * 16 V
EAg Single Pulse Avalanche Energy© 340 m]
IAR Avalanche CurrentC) 46 A
EAR Repetitive Avalanche Energy© 17 m]
dv/dt Peak Diode Recovery dv/dt © 5.0 V/ns
Tu Operating Junction and -55 to + 175
TSTG Storage Temperature Range °C
Soldering Temperature, for 10 seconds 300 (1.6mm from case )
Mounting torque, 6-32 or M3 srew 10 Ibf-in (1 .1N-m)
Thermal Resistance
Parameter Typ. Max. Units
Rac Junction-to-Case - 0.90
Recs Case-to-Sink, Flat, Greased Surface 0.50 - 'C/W
ReJA Junction-to-Ambient - 62
8/25/97
IRL3705N International
TOR Rectifier
Electrical Characteristics @ To = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
V(BR)DSS Drain-to-Source Breakdown Voltage 55 - - V VGs = 0V, ID = 250pA
AV(BR)DSSIATJ Breakdown Voltage Temp. Coefficient - 0.056 - V/°C Reference to 25°C, ID = 1mA
- - 0.010 VGS =10V, ID = 46A (9
RDs(on) Static Drain-to-Source On-Resistance - - 0.012 Q VGS = 5.0V, ID = 46A ©
- - 0.018 I/ss = 4.0V, ID = 39A GD
VGS(th) Gate Threshold Voltage 1.0 - 2.0 V VDs = I/ss, ID = 250pA
gfs Forward Transconductance 50 - - S l/os = 25V, ID = 46A
bss Drain-to-Source Leakage Current : : Ji, pA $3: =- i,si,t//,' V2: =" g, To = 150°C
less Gate-to-Source Forward Leakage - - 100 n A VGs = 16V
Gate-to-Source Reverse Leakage - - -100 VGS = -16V
Qg Total Gate Charge - - 98 ID = 46A
Qgs Gate-to-Source Charge - - 19 no Vos = 44V
di Gate-to-Drain ("Miller") Charge - - 49 VGs = 5.0V, See Fig. 6 and 13 69
td(on) Turn-On Delay Time - 12 - VDD = 28V
tr Rise Time - 140 - ns ID = 46A
td(off) Turn-Off Delay Time - 37 - Rs = 1.89, I/ss = 5.0V
t, Fall Time 78 RD = 0.599, See Fig. 10 ©
. Between lead, D
u, Internal Drain Inductance - 4.5 - nH 6mm (0.25in.) g: )
Ls Internal Source Inductance - 7.5 - from package . G
and center of die contact s
Ciss Input Capacitance - 3600 - l/ss = 0V
Coss Output Capacitance - 870 - pF VDs = 25V
Crss Reverse Transfer Capacitance - 320 - f = 1.0MHz, See Fig. 5
Source-Drain Ratings and Characteristics
Parameter Min. Typ. Max. Units Conditions
Is Continuous Source Current MOSFET symbol D
(Body Diode) - - 896) A showing the i:
ISM Pulsed Source Current integral reverse G C,
(Body Diode) co - - 310 p-n junction diode. s
VSD Diode Forward Voltage - - 1.3 V T: = 25°C, ls = 46A, VGs = 0V GD
trr Reverse Recovery Time - 94 140 ns TJ = 25°C, IF = 46A
G, Reverse RecoveryCharge - 290 440 nC di/dt = 100A/ps ©
ton Forward Turn-On Time Intrinsic tum-on time is negligible (tum-on is dominated by LS+LD)
Notes:
co Repetitive rating; pulse width limited by C3) ISD s: 46A, di/dt s: 250A/ps, VDD S V(BR)DSS:
max. junction temperature. ( See fig. 11 ) Tu S 175°C
GD Pulse width 3 300ps; duty cycles 2%.
G) Calculated continuous current based on maximum allowable
junction temperature; for recommended current-handling of the
package refer to Design Tip # 93-4
© VDD = 25V, starting T J = 25°C, L = 320pH
Rs = 259, lAs = 46A. (See Figure 12)
