IRL3402PBF ,20V Single N-Channel HEXFET Power MOSFET in a TO-220AB packageapplicationsatpowerdissipation
levels to approximately 50 watts. The low thermal
resistance and l ..
IRL3705N ,55V Single N-Channel HEXFET Power MOSFET in a TO-220AB packagePD - 9.1370CIRL3705N®HEXFET Power MOSFETl Logic-Level Gate DriveDl Advanced Process TechnologyV = 5 ..
IRL3705NPBF ,55V Single N-Channel HEXFET Power MOSFET in a TO-220AB packageapplications.The TO-220 package is universally preferred for allcommercial-industrial
IRL3705NS ,55V Single N-Channel HEXFET Power MOSFET in a D2-Pak packageapplications.Absolute Maximum RatingsParameter Max. UnitsI @ T = 25°C Continuous Drain Current, V @ ..
IRL3705NSTRLPBF ,55V Single N-Channel HEXFET Power MOSFET in a D2-Pak package
IRL3705NSTRLPBF ,55V Single N-Channel HEXFET Power MOSFET in a D2-Pak package
ISP321-1 , HIGH DENSITY MOUNTING PHOTOTRANSISTOR OPTICALLY COUPLED ISOLATORS
ISP321-1 , HIGH DENSITY MOUNTING PHOTOTRANSISTOR OPTICALLY COUPLED ISOLATORS
ISP521-4 , HIGH DENSITY MOUNTING PHOTOTRANSISTOR OPTICALLY COUPLED ISOLATORS
ISP742RI , Smart Power High-Side-Switch for Industrial Applications
ISP742RI , Smart Power High-Side-Switch for Industrial Applications
ISP752R , Smart Power High-Side-Switch for Industrial Applications
IRL3402PBF
20V Single N-Channel HEXFET Power MOSFET in a TO-220AB package
PD- 95667
IRL3402PbF
HEXFET<) Power MOSFET
International
TOR Rectifier
a Advanced Process Technology
. Optimized for 4.5V-7.0V Gate Drive D
0 Ideal for CPU Core DC-DC Converters
o Fast Switching
Vross = 20V
RDS(on) = 0.019
. Lead-Free
Description s
These HEXFET Power MOSFETs were designed
specifically to meet the demands of CPU core DC-DC
converters. Advanced processing techniques
combined with an optimized gate oxide design results
in a die sized specifically to offer maximum efficiency
at minimum cost.
ID = 85A©
The TO-220 package is universally preferred for all .
commerciaI-industrial applicationsat powerdissipation TOWOAR
levels to approximately 50 watts. The low thermal
resistance and low package cost of the TO-220
contribute to its wide acceptance throughout the
industry.
Absolute Maximum Ratings
Parameter Max. Units
ID @ Tc = 25''C Continuous Drain Current, Veg tp 5.0V MS
ID tp Tc =100''C Continuous Drain Current, Veg til 5.0V 54 A
IDM Pulsed Drain Current G) 340
PD @Tc = 25°C Power Dissipation 110 W
Linear Derating Factor 0.91 W/°C
I/cs Gate-to-Source Voltage l 10 V
VGSM Gate-to-Source Voltage 14 V
(Start Up Transient, tp = 100ps)
EAS Single Pulse Avalanche Energy© 290 mJ
[AR Avalanche Current© 51 A
EAR Repetitive Avalanche Energy© 11 ml
dv/dt Peak Diode Recovery dv/dt s 5.0 V/ns
TJ Operating Junction and -55 to + 150
Tsro Storage Temperature Range t
Soldering Temperature, for 10 seconds 300 (1.6mm from case )
Mounting torque, 6-32 or M3 srew 10 lbf-in (1.1N-m)
Thermal Resistance
Parameter Typ. Max. Units
Rauc Junction-to-Case - 1.1
Recs Case-to-Sink, Flat, Greased Surface 0.50 - "C/W
ReJA Junction-to-Ambient - 62
1
7/30/04
IRL3402PbF International
TOR Rectifier
Electrical Characteristics @ To = 25''C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
V(BRpss Drain-to-Source Breakdown Voltage 20 - - V Vos = ov, ID = 250pA
AV(BR)DSS/ATJ Breakdown Voltage Temp. Coemcient - 0.02 - W'C Reference to 25''C, ID = 1mA
. . . - - 0.010 MSS = 4.5V, ID = 51A C9
RDS(on) Static DraIn-toSource On-Resistance - - 0.008 Q Vos = 7.OV, '0 = 51 A co
VGS(th) Gate Threshold Voltage 0.70 - - V Ws = Veg, b = 250uA
gtt Forward Transconductance 65 - - S Mos = 10V, ID = 51A
. - - 25 Ws = 20V, Veg = 0V
loss Drain-tice Leakage Current - - 250 pA Mos = 16V, Ves = OV, TJ = 150°C
Gate-to-Source Forward Leakage - - 100 Veg = 10V
loss Gate-to-Source Reverse Leakage - - -100 nA Vos = -10V
09 Total Gate Charge - - 78 ID = 51A
Qgs Gate-to-Source Charge - - 18 nC Ws = 10V
di Gate-to-Drain ("Miller") Charge - - 30 Vee = 4.5V, See Fig. 6 CO
tam) Turn-On Delay Time - 10 - VDD = 10V
tr Rise Time - 140 - ns ID = 51A
td(0ff) Turn-Off Delay Tlme - 80 - Ro = 5.0fl, Ws = 4.5V
tr Fall Time - 120 - RD = 0.19Q, G)
. Between lead, D
Lo Internal Drain Inductance - 4.5 - 6mm (0.25in.) (i']
"H from package 0
LS Internal Source Inductance - 7.5 - .
and center of die contact s
Ciss Input Capacitance - 3300 - l/ss = 0V
Coss Output Capacitance - 1400 - pF Mos = 15V
Crss Reverse Transfer Capacitance - 510 - f = 1.0MHz, See Fig. 5
Source-Drain Ratings and Characteristics
Parameter Min. Typ. Max. Units Conditions
ls Continuous Source Current MOSFET symbol D
(Body Diode) - - MS A showing the
ISM Pulsed Source Current - - 340 integral reverse 0
(Body Diode) G) p-n junction diode. s
Vso Diode Forward Voltage - - 1.3 V T: = 25''C, ls = 51A, Vos = 0V co
trr Reverse Recovery Time - 72 110 ns Tu = 25°C. IF = 51A
er Reverse RecoveryCharge - 160 240 nC di/dt = 100A/ps co
ton Forward Turn-On Time Intrinsic turn-on time is negligible (tum-on is dominated by Ls+ LD)
Notes:
co Repetitive rating; pulse width limited by
max. junction temperature.
C) Starting Tu = 25''C, L = 220pH
Rs = 25f2, IAS = 51A.
© Iso I 51A, di/dt C 82A/ps, VDD C V(BR)DSS'
TJs150°c
GD Pulse width g 300ps; duty cycle c: 2%.
s Calculated continuous current based on maximum allowable
junction temperature: for recommended current-handling of the
package refer to Design Tip # 93-4
