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IRL3303S -IRL3303STRL-IRL3303STRR
30V Single N-Channel HEXFET Power MOSFET in a TO-262 package
PD - 9.13238
International
TOR, Rectifier IRL3303S/L
Logic-Level Gate Drive HEXFET® Power MOSFET
Advanced Process Technology D
Surface Mount (IRL3303S)
Low-profile through-hole (IRL3303L)
175°C Operating Temperature
Fast Switching G
FullyAvalanche Rated
VDSS = 30V
RDS(on) = 0.0269
ID = 38A
Description
Fifth Generation HEXFETs from International Rectifier
utilize advanced processing techniques to achieve
extremely low on-resistance per silicon area. This
benefit, combined with the fast switching speed and
ruggedized device design that HEXFET Power MOSFETs
arewell known for, providesthe designerwith an extremely
effcient and reliable device for use in a wide variety of
applications.
The D2Pak is a surface mount power package capable of
accommodating die sizes up to HEX-4. It provides the
highest power capability and the lowest possible on- D 2 Pak TO-262
resistance in any existing surface mount package. The
D2Pak is suitable for high current applications because of
its low internal connection resistance and can dissipate
up to 2.0W in a typical surface mount application.
The through-hole version (IRL3303L) is available for low-
profile applications.
Absolute Maximum Ratings
Parameter Max. Units
b @ TC = 25°C Continuous Drain Current, VGS @ ION/S 38
ID @ Tc = 100°C Continuous Drain Current, Veg @ 10VC9 27 A
IDM Pulsed Drain Current C)6) 140
Pro @TA= 25°C Power Dissipation 3.8 W
PD @Tc = 25''C Power Dissipation 68 W
Linear Derating Factor 0.45 W/°C
I/ss Gate-to-Source Voltage $16 V
EAS Single Pulse Avalanche Energy©S 130 m]
IAR Avalanche Current0) 20 A
EAR Repetitive Avalanche Energy© 6.8 rN
dv/dt Peak Diode Recovery dv/dt ©6) 5.0 V/ns
Tu Operating Junction and -55 to + 175
TSTG Storage Temperature Range ''C
Soldering Temperature, for 10 seconds 300 (1.6mm from case )
Thermal Resistance
Parameter Typ. Max. Units
ReJC Junction-to-Case - 2.2 o C /W
ReJA Junction-to-Ambient ( PCB Mounted/steady-state)" - 40
8/25/97
IRL3303S/L International
TOR Rectifier
Electrical Characteristics @ Tu = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
V(BR)DSS Drain-to-Source Breakdown Voltage 30 - - V VGs = 0V, ID = 250pA
AV(BR)DSS/ATJ Breakdown Voltage Temp. Coefficient - 0.035 - V/°C Reference to 25°C, ID = 1mAS
. . . - - 0.026 VGS = 10V, ID = 20A co
RDs(on) Static Drain-to-Source On-Resistance - - 0.040 f2 Ves = 4.5V, b = 17A © TJ = 150°C
VGS(th) Gate Threshold Voltage 1.0 - V I/ras = VGS, ID = 250pA
gfs Forward Transconductance 12 - - S Ws = 25V, ID = 20AS
loss Drain-to-Source Leakage Current : : Ji, PA x3: "="" 1232:: (fC--" fl), Tu = 150°C
Gate-to-Source Forward Leakage - - 100 VGs = 16V
less Gate-to-Source Reverse Leakage - - -100 nA VGs = -16V
q, Total Gate Charge - - 26 ID = 20A
cbs Gate-to-Source Charge - - 8.8 nC Vros = 24V
di Gate-to-Drain ("Miller") Charge - - 15 VGS = 4.5V, See Fig. 6 and 13 @6)
td(on) Turn-On Delay Time - 7.4 - VDD = 15V
tr Rise Time - 200 - ID = 20A
tam) Turn-Off Delay Time - 14 - Rs = 6.59
tr FaIITime - 36 - RD = 0.79, See Fig. 10 ((i)6)
Ls Internal Source Inductance - 7.5 - nH Between lead,
and center of die contact
Ciss Input Capacitance - 870 - I/ss = 0V
Coss Output Capacitance - 340 - pF VDs = 25V
Crss Reverse Transfer Capacitance - 170 - f = 1.0MHz, See Fig. 56)
Source-Drain Ratings and Characteristics
Parameter Min. Typ. Max. Units Conditions
g Continuous Source Current 38 MOSFETsymbol D
(Body Diode) - - A showing the Hi:
ISM Pulsed Source Current integral reverse G
(Body Diode) co - - 140 p-n junction diode. s
l/so Diode Forward Voltage - - 1.3 V Tu = 25°C, Is = 20A, VGs = 0V G)
trr Reverse Recovery Time - 72 110 ns Tu = 25°C, IF = 20A
er Reverse Recovery Charge - 180 280 pC di/dt = 100A/ps C9S
ton Forward Turn-On Time Intrinsic tum-on time is negligible (turn-on is dominated by LS+LD)
Notes:
co Repetitive rating; pulse width limited by © ISD 5 20A, di/dt s 140A/ps, V00 3 V(BR)DSS,
max. junction temperature. ( See fig. 11 ) TJS 175°C
© VDD = 15V, starting TJ = 25°C, L = 470pH © Pulse width 3 300ps; duty cycle f 2%.
Rs-- 25O, IAS = 20A. (See Figure 12) G) Uses IRL3303 data and test conditions.
** When mounted on 1" square PCB ( FR-4 or G-10 Material ).
For recommended footprint and soldering techniques refer to application note #AN-994.
