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IRL3303
30V Single N-Channel HEXFET Power MOSFET in a TO-220AB package
International
TOR, Rectifier
PD - 9.1322B
IRL3303
HEXFET® Power MOSFET
o Logic-Level Gate Drive
0 Advanced Process Technology D
o Dynamic dv/dt Rating VDSS = 30V
o 175°C Operating Temperature _
o Fast Switching H- A RDS(on) = 0.0269
0 Fully Avalanche Rated
ID = 38A
Description s
Fifth Generation HEXFETs from International Rectifier
utilize advanced processing techniques to achieve the
lowest possible on-resistance persilicon area. This benefit,
combined with the fast switching speed and ruggedized (si/jd),),,,,,":.'."...;.:.,.-:.
device desi n that HEXFET Power MOSFETs are well
known for, pgovides the designer with an extremely efficient "1(5jiiiiiiia'si-ii).
device for use in a wide variety of applications. _/bi''''''';''
The TO-220 package is universally preferred for all
commercial-industrial applications at power dissipation
levels to approximately 50 watts. The Iowthermal resistance TO-220AB
and low package cost of the TO-220 contribute to its wide
acceptance throughout the industry.
Absolute Maximum Ratings
Parameter Max. Units
ID @ To = 25''C Continuous Drain Current, VGS @ 10V 38
ID @ To = 100°C Continuous Drain Current, VGS @ 10V 27 A
IDM Pulsed Drain Current C) 140
PD @Tc = 25°C Power Dissipation 68 IN
Linear Derating Factor 0.45 W/°C
I/ss Gate-to-Source Voltage :16 V
EAs Single Pulse Avalanche Energy © 130 ml
IAR Avalanche Current© 20 A
EAR Repetitive Avalanche Energy(0 6.8 nt)
dv/dt Peak Diode Recovery dv/dt © 5.0 V/ns
Tu Operating Junction and -55 to + 175
TSTG Storage Temperature Range ''C
Soldering Temperature, for 10 seconds 300 (1.6mm from case)
Mounting torque, 6-32 or M3 screw. 10 lbf-in (1.1N-m)
Thermal Resistance
Parameter Min. Typ. Max. Units
Rac Junction-to-Case - - 2.2
Recs Case-to-Sink, Flat, Greased Surface - 0.50 - ''ClW
Rua Junction-to-Ambient - - 62
8/25/97
IRL3303
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
International
TOR liectifier
Parameter Min. Typ. Max. Units Conditions
V(BR)DSS Drain-to-Source Breakdown Voltage 30 - - V VGS = 0V, ID = 250pA
AV(BR)DSS/ATJ Breakdown Voltage Temp. Coefficient - 0.035 - V/°C Reference to 25°C, ID = 1mA
RDs(on) Static Drain-to-Source On-Resistance - - 0.026 Q VGS = 10V, ID = 20A co
- - 0.040 VGs = 4.5V, ID = 17A co
VGS(th) Gate Threshold Voltage 1.0 - - V VDs = I/ss, lo = 250p A
git Forward Transconductance 12 - - S VDS = 25V, ID = 20A
loss Drain-to-Source Leakage Current - - 25 pA VDS = 30V, VGS = 0V
- - 250 VDs = 24V, VGS = 0V, Tu = 150°C
less Gate-to-Source Forward Leakage - - 100 n A VGS = 16V
Gate-to-Source Reverse Leakage - - -100 VGS = -16V
Qg Total Gate Charge - - 26 ID = 20A
Qgs Gate-to-Source Charge - - 8.8 nC VDS = 24V
di Gate-to-Drain ("Miller") Charge - - 15 Kas = 4.5V, See Fig. 6 and 13 co
td(0n) Turn-On Delay Time - 7.4 - VDD = 15V
tr Rise Time - 200 - ns ID = 20A
td(off) Turn-Off Delay Time - 14 - Rs = 6.59, VGS = 4.5V
tf Fall Time - 36 - RD = 0.7n, See Fig. 10 CO
LD Internal Drain Inductance - 4.5 - t',t,"Cr."2e)' D
nH from package G )
LS Internal Source Inductance - 7.5 - .
and center of die contact s
Ciss Input Capacitance - 870 - I/ss = 0V
Coss Output Capacitance - 340 - pF VDS = 25V
Crss Reverse Transfer Capacitance - 170 - f = 1.0MHz, See Fig. 5
Source-Drain Ratings and Characteristics
Parameter Min. Typ. Max. Units Conditions
Is Continuous Source Current - - 38 MOSFET symbol D
(Body Diode) A showmg the L-u--,
ISM Pulsed Source Current - - 140 integral reverse G (tLl
(Body Diode) co p-n Junction diode. s
VSD Diode Forward Voltage - - 1.3 V TJ = 25°C, Is = 20A, VGS = ov co
trr Reverse Recovery Time - 72 110 ns TJ = 25°C, IF = 20A
Qrr Reverse RecoveryCharge - 180 280 nC di/dt = 100A/ps ©
ton Forward Turn-On Time Intrinsic turn-on time is negligible (tum-on is dominated by LS+LD)
Notes:
co Repetitive rating; pulse width limited by
max. junction temperature. ( See fig. 11 )
© l/DD = 25V, starting Tu = 25°C, L = 470pH
Rs = 25n, bus = 20A. (See Figure 12)
TJs175°C
© ISD 3 20A, di/dt s 140/Ups, VDD s V(BRmss,
GD Pulse width 5 300ps; duty cycle s: 2%.
