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IRL3302
20V Single N-Channel HEXFET Power MOSFET in a TO-220AB package
PD 9.1696A
International
" IRL3302
I553 Rectifi er PRELIMINARY
HEXFET*) Power MOSFET
o Advanced Process Technology
o Optimized for 4.5V Gate Drive D VDSS = 20V
o Ideal for CPU Core DC-DC Converters
o 150 C O_peretmg Temperature F'n IE RDS(on) = 0.020W
o Fast Switching
Description Iro = 39A
These HEXFET Power MOSFETs were designed S
specifically to meet the demands of CPU core DC-DC
converters in the PC environment. Advanced
processing techniques combined with an optimized
gate oxide design results in a die sized specifically to
offer maximum cost.
The TO-220 package is universally preferred for all
commercial-industrial applications at powerdissipation
levels to approximately 50 watts. The low thermal
resistance and low package cost of the TO-220
contribute to its wide acceptance throughout the
industry. TO-220AB
Absolute Maximum Ratings
Parameter Max. Units
ID @ Tc = 25°C Continuous Drain Current, VGs @ 4.5V 39
ID @ Tc = 100°C Continuous Drain Current, VGS @ 4.5V 25 A
IDM Pulsed Drain Current C) 160
PD @Tc = 25°C Power Dissipation 57 W
Linear Derating Factor 0.45 W/°C
VGS Gate-to-Source Voltage * 10 V
VGSM Gate-to-Source Voltage 14 V
(Start Up Transient, tp = 100ps)
EAs Single Pulse Avalanche Energy© 130 mJ
IAR Avalanche CurrentCD 23 A
EAR Repetitive Avalanche Energy(0 5.7 mJ
dv/dt Peak Diode Recovery dv/dt G) 5.0 V/ns
Tu Operating Junction and -55 to + 150
TSTG Storage Temperature Range ''C
Soldering Temperature, for 10 seconds 300 (1.6mm from case )
Mounting torque, 6-32 or M3 srew 10 lbf-in (1.1N-m)
Thermal Resistance
Parameter Typ. Max. Units
Roc Junction-to-Case - 2.2
chs Case-to-Sink, Flat, Greased Surface 0.50 - °CNV
' Junction-to-Ambient - 62
11/18/97
IRL3302
International
TOR Rectifier
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
V(BR)DSS Drain-to-Source Breakdown Voltage 20 - - V I/ss = 0V, ID = 250pA
DV(BR)D53/DTJ Breakdown Voltage Temp. Coefficient - 0.022 - V/°C Reference to 25°C, ID = 1mA
. . . - - 0.023 VGS = 4.5V, ID = 23A ©
RDS(on) Static Drain-to-Source On-Resistance - - 0.020 W VGS = 7.0V, ID = 23 A (il)
VGS(th) Gate Threshold Voltage 0.70 - - V VDS = VGS, ID = 250pA
gfs Forward Transconductance 21 - - S Vos = 10V, ID = 23A
I Drain-to-Source Leaka e Current - - 25 pA Vros = 20V, I/ss = 0V
DSS g - - 250 VDS = 10V, VGS = 0v, TJ = 150°C
Gate-to-Source Forward Leakage - - 100 VGs = 10V
IGSS Gate-to-Source Reverse Leakage - - -100 nA VGs = -10V
09 Total Gate Charge - - 31 ID = 23A
Qgs Gate-to-Source Charge - - 5.7 nC Vos = 16V
di Gate-to-Drain ("Miller") Charge - - 13 I/ss = 4.5V, See Fig. 6 Cl)
td(on) Turn-On Delay Time - 7.2 - VDD = 10V
tr Rise Time - 110 - ns ID = 23A
td(ott) Turn-Off Delay Time - 41 - RG = 9.5W, VGS = 4.5V
tf Fall Time - 89 - Ro = 2.4w, G)
. Between lead, D
LD Internal Drain Inductance - 4.5 - 6mm (0.25in.)
nH from package G )
Ls Internal Source Inductance - 7.5 - and center of die contact s
Ciss Input Capacitance --- 1300 - VGs = 0V
Coss Output Capacitance - 520 - pF VDs = 15V
Crss Reverse Transfer Capacitance - 190 - f = 1.0MHz, See Fig. 5
Source-Drain Ratings and Characteristics
Parameter Min. Typ. Max. Units Conditions
ls Continuous Source Current - - 39 MOSFET symbol D
(Body Diode) A showing the Lt
ISM Pulsed Source Current - _ 160 integral reverse G (tLl
(Body Diode) C) p-n junction diode. s
VSD Diode Forward Voltage - - 1.3 V Tu = 25°C, Is = 23A, VGS = 0V G)
tn Reverse Recovery Time - 62 94 ns Tu = 25°C, IF = 23A
Qrr Reverse Recovery Charge - 110 160 nC di/dt = 100A/ps ©
ton Forward Turn-On Time Intrinsic tum-on time is negligible (turn-on is dominated by LS+LD)
Notes:
C) Repetitive rating; pulse width limited by
max. junction temperature.
C) Starting To = 25°C, L = 0.49mH
Rc-- 25w,
IAS = 23A.
TJ£150°C
© kr, L 23A, di/dt L 97A/ps, VDD f V(BR)ross,
GD Pulse width L 300ps; duty cycle L 2%.
