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IRL3215PBF
150V Single N-Channel HEXFET Power MOSFET in a TO-220AB package
International
TOR Rectifier
Description
Fifth Generation HEXFETs from International Rectifier utilize advanced
processing techniquesto achieve extremely low on-resistance per silicon area.
This benefit, combined with the fast switching speed and ruggedized device
design that HEXFET Power MOSFETs are well known for, provides the
designer with an extremely efficient and reliable device for use in a wide variety
of applications.
The TO-220 package is universally preferred for all commercial-industrial
applications at power dissipation levels to approximately 50 watts. The low
Advanced Process Technology
Ultra Low On-Resistance
Dynamic dv/dt Rating
175°C Operating Temperature
Fast Switching
Fully Avalanche Rated
PD- 95405A
IRL3215PbF
HEXFET© Power MOSFET
VDSS = 150V
" Roam) = 0.166 Q
ID =12AS
thermal resistance and low package cost of the TO-220 contribute to its wide TO-22OAB
acceptance throughout the industry.
Absolute Maximum Ratings
Parameter Max. Units
ID @ To = 25°C Continuous Drain Current, Vas @ 10V 12 (9
ID @ To = 100°C Continuous Drain Current, l/ss @ 10V 8.5 A
IDM Pulsed Drain Current 0) 48
Po @TC = 25°C Power Dissipation 80 W
Linear Derating Factor 0.53 W/°C
l/tss Gate-to-Source Voltage tl6 V
EAs Single Pulse Avalanche Energy© 130 mJ
IAR Avalanche Current© 7.2 A
EAR Repetitive Avalanche Energy® 8.0 mJ
dv/dt Peak Diode Recovery dv/dt © 5.0 V/ns
Tu Operating Junction and -55 to + 175
TSTG Storage Temperature Range °C
Soldering Temperature, for 10 seconds 300 (1.6mm from case )
Mounting torque, 6-32 or M3 srew IO Ibf-in (1 .1N-m)
Thermal Resistance
Parameter Typ. Max. Units
ReJC Junction-to-Case -.-.- 1 .9
Recs Case-to-Sink, Flat, Greased Surface 0.50 - °C/W
ROJA Junction-to-Ambient - 62
1
07/22/11
|RL3215PbF
International
TOR Rectifier
Electrical Characteristics © Tu = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
V(BR)DSS Drain-to-Source Breakdown Voltage 150 __- __- V Ves = 0V, ID = 250pA
AV(BR)DSS/ATJ Breakdown VoltageTemp. Coefficient - 0.20 - V/°C Reference to 25°C, ID = 1mA
- - 0.166 l/ss =10V, ID = 7.2A ©
Roswn) Static Drain-to-Source On-Resistance - _ 0.184 Q Vss = 5.0V, Ir) = 7.2A ©
- - 0.208 I/ss = 4.0V, Io = 6A (9
VGS(th) Gate Threshold Voltage 1.0 -- 2.0 V Vros = Vas, ID = 250pA
gfs Forward Transconductance 8.3 __- --.- S VDS = 25V, ID = 7.2ACO
loss Drain-to-Source Leakage Current _- _- 225: pA "t: : 123$ t: : g, To = 1 50°C
lass Gate-to-Source Forward Leakage - - 100 n A Vss = 16V
Gate-to-Source Reverse Leakage - - -100 Ves = -16V
09 Total Gate Charge -- - 35 ID = 7.2A
Qgs Gate-to-Source Charge --.- --.- 4.1 no Vros = 120V
di Gate-to-Drain ("Miller")Charge - - 21 VGS = 5.0V, See Fig. 6 and 13 (MD
tdon) Turn-On Delay Time - 7.4 - VDD = 75V
1, Rise Time - 45 - ns ID = 7.2A
td(oit) Turn-Off Delay Time - 38 - Rs = 129, Vas = 5.0V
tf FaIITime 36 RD = 10.29, See Fig. 10 (POD
u, Internal Drain Inductance - 4.5 - nH Eggigglgif) E D)
LS IntemaISourcelnductanoe - 7.5 - from package . G
and center of die contact© s
Ciss InputCapacitance - 775 - Vss = 0V
Coss OutputCapacitance - 140 - pF Vos = 25V
Crss Reverse TransferCapacitance --.- 7O --- f = 1.0MHz, See Fig. 50)
Source-Drain Ratings and Characteristics
Parameter Min. Typ. Max. Units Conditions
Is Continuous Source Current MOSFET symbol D
(Body Diode) _ - 12S A showing the
ISM Pulsed Source Current - - 48 integral reverse G
(Body Diode) (D p-n junction diode. s
VSD Diode Forward Voltage - - 1.3 V To = 25°C, Is = 7.2A, VGS = 0V ©
tr, Reverse RecoveryTime - 160 240 ns TI, = 25°C, IF = 7.2A
Qrr Reverse RecoveryCharge - 810 1210 nC di/dt = 100A/ps ©
tbn Forward Turn-On Time Intrinsic tum-on time is negligible (tum-on is dominated by LS+LD)
Notes:
co Repetitive rating; pulse width limited by
max. junction temperature. ( See fig. 11 )
© Starting TJ = 25°C, L = 4.9mH
Rs = 259, lAs = 7.2A. (See Figure 12)
© ISD S 7.2A, di/dt S 1OOA/ps, VDD S V(BR)DSSu
TJs175°C
© Pulse width f 300ps; duty cycle f 2%.
© Caculated continuous current based on maximum allowable
junction temperature;for recommended current-handling of the
package refer to Design Tip # 93-4
