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IRL3202
20V Single N-Channel HEXFET Power MOSFET in a TO-220AB package
PD 9.1695A
International IRL3202
I523 Rectifier PRELIMINARY
HEXFET® Power MOSFET
0 Advanced Process Technology D
0 Optimized for 4.5V-7.0V Gate Drive VDSS = 20V
o Ideal for CPU Core DC-DC Converters
0 Fast Switching G RDS(0n) = 0.016W
Description I - 48A
These HEXFET Power MOSFETs were designed S D -
specifically to meet the demands of CPU core DC-DC
converters in the PC environment. Advanced
processing techniques combined with an optimized
gate oxide design results in a die sized specifically to
offer maximum efficiency at minimum cost.
The TO-220 package is universally preferred for all
commercial-industrial applications at power
dissipation levels to approximately 50 watts. The low
thermal resistance and low package cost of the TO-
220 contribute to its wide acceptance throughout the
industry.
Absolute Maximum Ratings
Parameter Max. Units
ID @ Tc = 25°C Continuous Drain Current, I/ss @ 4.5V 48
ID @ To = 100°C Continuous Drain Current, Ves @ 4.5V 30 A
G, Pulsed Drain Current (D 190
PD @Tc = 25°C Power Dissipation 69 W
Linear Derating Factor 0.56 W/°C
I/ss Gate-to-Source Voltage i 10 V
VGSM Gate-to-Source Voltage 14 V
(Start Up Transient, tp = 100ys)
EAS Single Pulse Avalanche Energy© 270 m]
IAR Avalanche Current0) 29 A
EAR Repetitive Avalanche EnergyC) 6.9 nt)
dv/dt Peak Diode Recovery dv/dt © 5.0 V/ns
TJ Operating Junction and -55 to + 150
TSTG Storage Temperature Range (
Soldering Temperature, for 10 seconds 300 (1.6mm from case )
Mounting torque, 6-32 or M3 srew 10 Ibf-in (1.1N-m)
Thermal Resistance
Parameter Typ. Max. Units
Ric Junction-to-Case - 1.8
Rios Case-to-Sink, Flat, Greased Surface 0.50 - "C/W
ROSA Junction-to-Ambient - 62
11/18/97
lRL.3202
International
TOR Rectifier
Electrical Characteristics @ Tu = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
V(BR)DSS Drain-to-Source Breakdown Voltage 20 - - V N/ss = 0V, ID = 250PA
DV(BR)Dss/DTJ Breakdown Voltage Temp. CoefMient - 0.029 - V/°C Reference to 25°C, ID = 1mA
. . . - - 0.019 VGS = 4.5V, ID = 29A (4)
RDS(on) Static Drain-to-Source On-Resistance - - 0.016 W VGS = 7.0V, ID = 29 A CO
VGS(th) Gate Threshold Voltage 0.70 - - V 1hos = VGS, ID = 250pA
gm Forward Transconductance 28 - - S Vos = 16V, ID = 29A
loss Drain-to-Source Leakage Current - - 25 PA Vros = 20V, I/ss = 0V
- - 250 VDS = 10V, VGS = 0V, TJ = 150°C
Gate-to-Source Forward Leakage - - 100 VGs = 10V
IGSS Gate-to-Source Reverse Leakage - - -100 nA VGS = -10V
ck, Total Gate Charge - - 43 ID = 29A
Q95 Gate-to-Source Charge - - 12 nC Vos = 16V
di Gate-to-Drain ("Miller") Charge - - 13 I/ss = 4.5V, See Fig. 6 co
td(on) Turn-On Delay Time - 9.8 - VDD = 10V
tr Rise Time - 100 - ns ID = 29A
td(ott) Turn-Off Delay Time - 63 - RG = 9.5W, I/ss = 4.5V
tf FallTime - 82 - Ro = 0.3W, co
. Between lead, D
LD Internal Drain Inductance - 4.5 - 6mm (0.25in.)
nH from package G )
Ls Internal Source Inductance - 7.5 - and center of die contact s
Ciss Input Capacitance - 2000 -- VGs = 0V
Coss Output Capacitance - 800 - pF VDs = 15V
Crss Reverse Transfer Capacitance - 290 - f = 1.0MHz, See Fig. 5
Source-Drain Ratings and Characteristics
Parameter Min. Typ. Max. Units Conditions
ls Continuous Source Current - - 48 MOSFETsymbol D
(Body Diode) A showing the Lt
ISM Pulsed Source Current - - 190 integral reverse G (tLl
(Body Diode) C) p-n junction diode. s
VSD Diode Forward Voltage - - 1.3 V Tu = 25°C, ls = 29A, VGS = 0V ©
trr Reverse Recovery Time - 68 100 ns Tu = 25°C, IF = 29A
Qrr Reverse Recovery Charge - 130 190 nC di/dt = 100A/ps ©
ton Forward Turn-On Time Intrinsic turn-on time is negligible (tum-on is dominated by LS+LD)
Notes:
C) Repetitive rating; pulse width limited by
© kg f 29A, di/dt L 63A/ps, VDD f V(BR)DSS,
TJ L 150°C
GD Pulse width L 300ps; duty cycle £ 2%.
max. junction temperature.
C) Starting TJ = 25°C, L = 0.64mH
RG = 25W, IAS = 29A.
