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IRL3103STRLPBF from IR,International Rectifier

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15.625ms

IRL3103STRLPBF

Manufacturer: IR

30V Single N-Channel HEXFET Power MOSFET in a D2-Pak package

Partnumber Manufacturer Quantity Availability
IRL3103STRLPBF IR 5900 In Stock

Description and Introduction

30V Single N-Channel HEXFET Power MOSFET in a D2-Pak package **IRL3103STRLPBF Manufacturer: Infineon Technologies**  

### **Specifications:**  
- **Type:** N-Channel HEXFET Power MOSFET  
- **Drain-Source Voltage (VDSS):** 30V  
- **Continuous Drain Current (ID):** 64A (at 25°C)  
- **Pulsed Drain Current (IDM):** 260A  
- **Gate-Source Voltage (VGS):** ±20V  
- **On-Resistance (RDS(on)):**  
  - 3.7mΩ (at VGS = 10V, ID = 32A)  
  - 5.0mΩ (at VGS = 4.5V, ID = 16A)  
- **Power Dissipation (PD):** 200W (at 25°C)  
- **Operating Junction Temperature (TJ):** -55°C to +175°C  
- **Package:** D2PAK (TO-263)  

### **Descriptions:**  
The IRL3103STRLPBF is a high-performance N-Channel MOSFET designed for power management applications. It features low on-resistance, high current handling, and fast switching capabilities, making it suitable for DC-DC converters, motor control, and power switching circuits.  

### **Features:**  
- **Low RDS(on)** for reduced conduction losses.  
- **High current capability** for robust power handling.  
- **Fast switching speed** for efficient operation.  
- **Avalanche energy rated** for improved reliability.  
- **Lead-free and RoHS compliant.**  

(Source: Infineon Technologies datasheet)

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