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IRL3103L-IRL3103S-IRL3103S.-IRL3103STRL-IRL3103STRR
30V Single N-Channel HEXFET Power MOSFET in a TO-262 package
PD - 94162
IRL3103S
IRL3103L
HEXFET© Power MOSFET
International
TOR Rectifier
Advanced Process Technology
Surface Mount (IRL3103S)
Low-profile through-hole (IRL3103L)
175°C Operating Temperature D
Fast Switching
q Fully Avalanche Rated
Description
Advanced HEXFET® Power MOSFETs from International
Rectifier utilize advanced processing techniques to
achieve extremely low on-resistance per silicon area. S
This beneht, combined with the fast switching speed and
ruggedized device design that HEXFET power MOSFETs
are well known for, provides the designer with an
extremely efficient and reliable device for use in a wide
variety of applications.
The D2Pak is a surface mount power package capable of
accommodating die sizes up to HEX-4. It provides the
highest power capability and the lowest possible on-
resistance in any existing surface mount package. The
D2Pak is suitable for high current applications because of its
VDSS = 30V
A RDS(on) = 12mf2
ID = 64A
low internal connection resistance and can dissipate up to D2Pak TO-262
2.0W in a typical surface mount application. IRL3103S IRL3103L
The through-hole version (IRL3103L) is available for low-
profile applications.
Absolute Maximum Ratings
Parameter Max. Units
ID @ Tc = 25°C Continuous Drain Current, Ves @ 10V 64
ID @ TC = 100''C Continuous Drain Current, Ves @ 10V 45 A
IDM Pulsed Drain Current OD 220
PD @Tc = 25°C Power Dissipation 94 W
Linear Derating Factor 0.63 W/°C
VGS Gate-to-Source Voltage l 16 V
IAR Avalanche Current© 34 A
EAR Repetitive Avalanche Energy00 22 mJ
dv/dt Peak Diode Recovery dv/dt © 5.0 V/ns
TJ Operating Junction and -55 to + 175
TSTG Storage Temperature Range oc
Soldering Temperature, for 10 seconds 300 (1.6mm from case )
Mounting torque, 6-32 or M3 srew 10 Ibf-in (1.1N-m)
Thermal Resistance
Parameter Typ. Max. Units
Ravc Junction-to-Case - 1 .6 o
ReJA Junction-to-Ambient (PCB mount)" - 40 C/W
1
02/ 1 4/ 02
IRL3103S/lRL3103L
International
TOR Rectifier
Electrical Characteristics @ T J = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
V(BR)DSS Drain-to-Source Breakdown Voltage 30 - - V VGS = 0V, ID = 250pA
AV(BR)Dss/ATJ Breakdown Voltage Temp. Coemcient - 0.028 - V/°C Reference to 25''C, ID = 1mA
. . . - - 12 VGs=10V,ID=34A (ii)
RDSW) Static Drain-to-Source On-Resistance - - 16 m9 VGS = 4.5V, ID = 28A @
VGS(th) Gate Threshold Voltage 1.0 - - V VDs = Kas, ID = 250uA
gfs Forward Transconductance 22 - - S Vos = 25V, ID = 34/W)
loss Drain-to-Source Leakage Current T, T, 22550 pA VS: , ::V x: =" g, To = 150°C
Gate-to-Source Forward Leakage - - 100 VGS = 16V
IGSS Gate-to-Source Reverse Leakage - - -100 nA VGS = -16V
% Total Gate Charge - - 33 ID = 34A
Qgs Gate-to-Source Charge - - 5.9 nC Vos = 24V
di Gate-to-Drain ("Miller") Charge - - 17 Vcs = 4.5V, See Fig. 6 and 13
td(on) Turn-On Delay Time .-.- 8.9 .-.- VDD = 15V
tr Rise Time - 120 - ID = 34A
td(off) Turn-Off Delay Time - 14 - Rs = 1.89
" Fall Time - 9.1 - VGS = 4.5V, See Fig. 10 ©
Lo Internal Drain Inductance - 4.5 - Between lead, D
6mm (0.25in.)
nH from package GE )
Ls Internal Source Inductance - 7.5 - and center of die contact s
Ciss Input Capacitance - 1650 - N/ss = 0V
Cass Output Capacitance - 650 - VDS = 25V
Crss Reverse Transfer Capacitance - 110 - pF f = 1.0MHz, See Fig. 5
EAS Single Pulse Avalanche Energy© - 1320C2130© mJ IAS = 34A, L = 0.22mH
Source-Drain Ratings and Characteristics
Parameter Min. Typ. Max. Units Conditions
Is Continuous Source Current _ _ 64 MOSFET symbol D
(Body Diode) A showing the
ISM Pulsed Source Current - - 220 integral reverse G
(Body Diode)© p-n junction diode. s
VSD Diode Forward Voltage - - 1.2 V TJ = 25°C, ls = 34A, VGS = 0V ©
tn Reverse Recovery Time - 57 86 ns TJ = 25°C, IF = 34A
G, Reverse Recovery Charge - 110 170 nC di/dt = 100A/ps 69
ton Forward Turn-On Time Intrinsic tum-on time is negligible (tum-on is dominated by L3+LD)
Notes:
co Repetitive rating; pulse width limited by
max. junction temperature. (See Rr 11)
© Starting To = 25°C, L = 220pH
Rs = 259, IAS = 34A, VGS=10V (See Figure 12)
Cs) la, S 34A, di/dt S 120A/ps, VDDS V(BR)DSS:
T J f 175°C
GD Pulse width S 400ps; duty cycle f 2%.
s This is a typical value at device destruction and represents
operation outside rated limits.
© This is a calculated value limited to To = 175°C .
“When mounted on 1" square PCB (FR-4 or G-10 Material). For
recommended footprint and soldering techniques refer to
application note #AN-994
