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IRL3103D1S-IRL3103D1STRL
30V FETKY
PD-9.1558A
International |RL3103D1S
Tart, 'keifier
FETKYTM MOSFET & SCHOTTKY RECTIFIER
o Co-packagedHEXFET®PowerMOSFET D
and Schottky Diode VDSS = 30V
GenerationSTechnology I
Logic Level Gate Drive
Minimize Circuit Inductance 2
Ideal ForSynchronous RegulatorApplication G
RDS(0n) = 0.0149
ID = 64A
Description
The FETKY family of co-packaged HEXFET power
MOSFETs and Schottky Diodes offer the designer an
innovative board space saving solution for switching
regulatorapplications. Alowon resistance Gen5 MOSFET
with a low forward voltage drop Schottky diode and
minimized component interconnect inductance and
resistance result in maximized converter efMiencies.
The D2Pak is a surface mount power package capable of
accommodating die sizes up to HEX-4. It provides the D 2 Pak
highest power capability and the lowest possible on-
resistance in any existing surface mount package. The
D2Pak is suitable for high current applications because
of its low internal connection resistance and can dissipate
up to 2.0W in a typical surface mount application.
Absolute Maximum Ratings
Parameter Max. Units
ID @ Tc = 25''C Continuous Drain Current, VGs @ 10VS 64
ID @ TC = 100°C Continuous Drain Current, l/ss @ 10V© 45 A
IDM Pulsed Drain Current C)(3) 220
Pro @TA = 25''C Power Dissipation 3.1 W
Pro @Tc = 25°C Power Dissipation 89 W
Linear Derating Factor 0.56 W/°C
VGS Gate-to-Source Voltage i 16 V
To Operating Junction and -55 to + 150
TSTG Storage Temperature Range (
Soldering Temperature, for 10 seconds 300 (1.6mm from case )
Thermal Resistance
Parameter Typ. Max. Units
ReJC Junction-to-Case - 1.4
Ram Junction-to-Ambient ( PCB Mounted/steady-state)" - 40 "CA/V
4/2/98
IRL3103ly1S International
IDR Rectifier
MOSFET Electrical Characteristics @ T J = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
V(BR)DSS Drain-to-Source Breakdown Voltage 30 - - V VGs = 0V, ID = 250PA
AV(BR)DsS/ATJ Breakdown Voltage Temp. Coefhcient - 0.037 - V/°C Reference to 25°C, ID = 1mA©
. . . - - 0.014 VGS =10V,ID = 34A ©
RDSM Static Drain-to-Source On-Resistance - _ 0.019 n VGS = 4.5V, ID = 28A ©
VGS(th) Gate Threshold Voltage 1.0 - - V Vos = VGs, ID = 250pA
gig Forward Transconductance 23 - - S Ws = 25V, ID = 34A©
loss Drain-to-Source Leakage Current : T, 0:20 mA V: =" elf,' 5:: J g( TJ = 125°C
Gate-to-Source Forward Leakage - - 100 VGS = 16V
IGSS Gate-to-Source Reverse Leakage - - -100 nA VGS = -16V
A Total Gate Charge - - 43 ID = 32A
(ks Gate-to-Source Charge - - 14 nC Ws = 24V
(Ars Gate-to-Drain ("Miller") Charge - - 23 VGS = 4.5V, See Fig. 6 ©
tam”) Turn-On Delay Time - 9.0 - VDD = 15V
tr RiseTime - 210 - ns ID = 32A
Gon Turn-Off Delay Time - 20 - Rs = 3.49, VGS =4.5V
tf FalITime - 54 - RD = 0.43 Q, ©©
Ls Internal Source Inductance - 7.5 - nH Between lead, .
and center of die contact
Ciss Input Capacitance - 1900 - VGS = 0V
Coss Output Capacitance - 810 - VDS = 25V
Crss Reverse Transfer Capacitance - 240 - f = 1.0MHz, See Fig. 5
Ciss Input Capacitance - 3500 - VGs = 0V, Vos = 0V
Body Diode & Schottky Diode Ratings and Characteristics
Parameter Min. Typ. Max. Units Conditions
V (AV) ( Schottky) MOSFETsymbol ,
- - 2.0 A showing the
ISM Pulsed Source Current - - 220 integral reverse G 5
(Body Diode) C) p-n junction and Schottky diode.
V301 Diode Forward Voltage - - 1.3 V TJ = 25°C, Is = 32A, VGS = 0V ©
V302 Diode Forward Voltage - - 0.50 V Tu = 25°C, Is = 1.0A, VGS = 0V ©
trr Reverse Recovery Time - 51 77 ns Tu = 25°C, IF = 32A
Qrr Reverse Recovery Charge - 49 73 nC di/dt = 100A/ps ©
ton Forward Turn-On Time Intrinsic tum-on time is negligible (tum-on is dominated by LS+LD)
Notes:
CD Repetitive rating; pulse width limited by ** When mounted on 1" square PCB ( FR-4 or G-10 Material ).
max. junction temperature. ( See fig. 10 ) For recommended footprint and soldering techniques refer
© Pulse width s: 300ps; duty cycle f 2%. to application note #AN-994.
©Uses IRL3103D1 data and test conditions
