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IRL3103D1
30V FETKY
PD 9.1608C
IRL3103D1
FETKYTM MOSFET & SCHOTTKY RECTIFIER
. Copackaged HEXFET® Power MOSFET D
and Schottky Diode
International
TOR Rectifier
VDSS = 30V
Generation 5 Technology
Logic Level Gate Drive
Minimize Circuit Inductance
Ideal For Synchronous Regulator Application
RDS(on) = 0.0149
ID = 64A
Description
The FETKY family of copackaged HEXFET power
MOSFETs and Schottky Diodes offer the designer an
innovative board space saving solution for switching
regulator applications. A low on resistance Gen 5
MOSFET with a low forward voltage drop Schottky
diode and minimized component interconnect
inductance and resistance result in maximized
converter efficiencies.
The TO-220 package is universally preferred for all
commercial-industrial applications at powerdissipation
levels to approximately 50 watts. The low thermal
resistance and low package cost of the TO-220
contribute to its wide acceptance throughout the
industry.
Absolute Maximum Ratings
Parameter Max.
ID @ TC = 25°C
Continuous Drain Current, VGS @ 10V©
ID @ TC = 100°C
Continuous Drain Current, VGS @ 10V©
Pulsed Drain Current COO)
PD @TA = 25°C
Power Dissipation
Pro @Tc = 25°C
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Operating Junction and
Storage Temperature Range
-55 to + 150
Soldering Temperature, for 10 seconds
300 (1.6mm from case )
Mounting torque, 6-32 or M3 srew
10 Ibf-in (1.1N-m)
Thermal Resistance
Parameter
Typ. Max.
Junction-to-Case
Junction-to-Ambient
12/16/97
IRL3103D1
MOSFET Electrical Characteristics @ T J = 25°C (unless otherwise specified)
International
TOR Rectifier
Parameter Min. Typ. Max. Units Conditions
V(BR)DSS Drain-to-Source Breakdown Voltage 30 - - V VGS = 0V, ID = 250pA
AWBRDSSIATJ Breakdown Voltage Temp. Coemcient - 0.037 - V/°C Reference to 25°C, ID = 1mA@
. . . - - 0.014 Vss =10V,lro = 34A ©
RDSM Static Drain-to-Source On-Resistance - - 0.019 Q VGS = 4.5V, ln = 28A ©
VGS(lh) Gate Threshold Voltage 1.0 - - V VDS = VGs, ID = 250pA
gfs Forward Transconductance 23 - - S Vos = 25V, ID = 32A©
loss Drain-to-Source Leakage Current _- _- 0;; mA x3: , 1232x212: , tf, To = 125°C
Gate-to-Source Forward Leakage - - 100 VGS = 16V
IGSS Gate-to-Source Reverse Leakage - - -100 nA I/ss = -16V
Qg Total Gate Charge - - 43 ID = 32A
Qgs Gate-to-Source Charge - - 14 n0 Vos = 24V
di Gate-to-Drain ("Miller") Charge - - 23 I/ss = 4.5V, See Fig. 6 ©
tdwn) Turn-On Delay Time - 9.0 - VDD = 15V
t, Rise Time - 210 - ns ID = 32A
tam) Turn-Off Delay Time - 20 - Rs = 3.49, VGS =4.5V
tr Fall Time - 54 - RD = 0.43 n, ©©
Lo Internal Drain Inductance - 4.5 _ nH Between lead, - D
6mm (0.25m.) _ L, 9.
LS Internal Source Inductance - 7.5 - from package G\\W. /
and center of die contact s
Ciss Input Capacitance - 1900 - VGS = OV
Coss Output Capacitance - 810 - V93 = 25V
Crss Reverse Transfer Capacitance - 240 - pF f = 1.0MHz, See Fig. 5
Ciss Input Capacitance - 3500 - VGs = 0V, l/DS = 0V
Body Diode & Schottky Diode Ratings and Characteristics
Parameter Min. Typ. Max. Units Conditions
IF (AV) ( Schottky) MOSFET symbol 3
- - 2.0 A showing the
ISM Pulsed Source Current integral reverse 6
(Body Diode) C) - - 220 p-n junction and Schottky diode. s
V301 Diode Forward Voltage - - 1.3 V TJ = 25°C, Is = 32A, l/ss = 0V ©
Vsoz Diode Forward Voltage - - 0.50 V TJ = 25°C, IS = 1.0A, Veg = 0V ©
tn Reverse Recovery Time - 51 77 ns TJ = 25''C, IF = 32A
Qrr Reverse Recovery Charge - 49 73 nC di/dt = 100A/ps ©
ton Forward Turn-On Time Intrinsic tum-on time is negligible (turn-on is dominated by L5+LD)
Notes:
(D Repetitive rating; pulse width limited by
max. junction temperature. ( See fig. 10 )
© Pulse width S 300ps; duty cycle s 2%.
© Uses IRL3103 data and test conditions
