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IRL3103-IRL3103PBF
30V Single N-Channel HEXFET Power MOSFET in a TO-220AB package
International
TOR, Rectifier
PD - 91337
|RL3103
HEXFET© Power MOSFET
0 Advanced Process Technology D
o Ultra Low On-Resistance VDSS = 30V
0 Dynamic dv/dt Rating
. 175°C Operating Temperature =
0 Fast Switching " RDS(on) 12mn
. Fully Avalanche Rated I - 64A
Description
Advanced HEXFETD Power MOSFETs from International
Rectiher utilize advanced processing techniques to achieve
extremely low on-resistance per silicon area. This benefit,
combined with the fast switching speed and ruggedized
device design that HEXFET power MOSFETs are well
known for, provides the designerwith an extremely ethcient
and reliable device for use in a wide variety ofapplications.
The TO-220 package is universally preferred for all
commercial-industrial applications at power dissipation
levels to approximately 50 watts. The low thermal
resistance and low package cost of the TO-220 contribute TO-220AB
to its wide acceptance throughout the industry.
Absolute Maximum Ratings
Parameter Max. Units
ID @ TC = 25°C Continuous Drain Current, VGS @ 10V 64
ID @ Tc = 100°C Continuous Drain Current, VGS @ 10V 45 A
IDM Pulsed Drain Current co 220
PD @Tc = 25°C Power Dissipation 94 W
Linear Derating Factor 0.63 Wl°C
VGS Gate-to-Source Voltage 1 16 V
IAR Avalanche CurrentCD 34 A
EAR Repetitive Avalanche EnergyCD 22 mJ
dv/dt Peak Diode Recovery dv/dt © 5.0 V/ns
To Operating Junction and -55 to + 175
Tsrs Storage Temperature Range ''C
Soldering Temperature, for 10 seconds 300 (1.6mm from case )
Mounting torque, 6-32 or M3 srew 10 Ibf-in (1.1N'm)
Thermal Resistance
Parameter Typ. Max. Units
Rac Junction-to-Case - 1 .6
Recs Case-to-Sink, Flat, Greased Surface 0.50 - "C/W
ReJA Junction-to-Ambient - 62
1
3/16/01
IRL3103
International
TOR Rectifier
Electrical Characteristics @ T J = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
V(BR)Dss Drain-to-Source Breakdown Voltage 30 - - V I/tss = 0V, ID = 250pA
AV
. . . - - 12 V68: 10V, ID=34A ©
RDS(Dn) Static Drain-to-Source On-Resistance _ _ 16 mn I/ss = 4.5V, ID = 28A ©
VGS(th) Gate Threshold Voltage 1.0 - - V Vros = VGs, ID = 250pA
9ts Forward Transconductance 22 - - S Ws = 25V, ID = 34/WD
l Drain-to-Source Leaka e Current - - 25 PA I/rss = 30V, VGS = 0V
DSS g - - 250 l/DS = 24V, Vss = OV, T: = 150°C
Gate-to-Source Forward Leakage - - 100 VGS = 16V
IGSS Gate-to-Source Reverse Leakage - - -100 nA VGS = -16V
09 Total Gate Charge - - 33 ID = 34A
Qgs Gate-to-Source Charge - - 5.9 nC Vros = 24V
di Gate-to-Drain ("Miller") Charge - - 17 VGS = 4.5V, See Fig. 6 and 13
td(on) Turn-On Delay Time - 8.9 - VDD = 15V
tr Rise Time - 120 - ID = 34A
td(off) Turn-Off Delay Time - 14 - Rs = 1.89
k Fall Time - 9.1 - VGS = 4.5V, See Fig. 10 ©
Lo Internal Drain Inductance - 4.5 - Between Isad, D
6mm (0.25in.) ,
nH from package GE )
Ls Intemal Source Inductance - 7.5 - and center of die contact s
Ciss Input Capacitance - 1650 - VGS = 0V
Coss Output Capacitance - 650 - Vos = 25V
Crss Reverse Transfer Capacitance - 110 - pF f = 1.0MHz, See Fig. 5
EAS Single Pulse Avalanche Energy© - 1320S130© mJ IAS-- 34A, L = 0.22mH
Source-Drain Ratings and Characteristics
Parameter Min. Typ. Max. Units Conditions
Is Continuous Source Current - - 64 MOSFET symbol D
(Body Diode) A showing the
ISM Pulsed Source Current - - 220 integral reverse G
(Body Diode)C) p-n junction diode. s
VSD Diode Forward Voltage - - 1.2 V To = 25°C, ls = 34A, VGS = 0V ©
trr Reverse Recovery Time - 57 86 ns TJ = 25°C, IF = 34A
G, Reverse Recovery Charge - 110 170 nC di/dt = 100/Ups co
ton Forward Turn-On Time Intrinsic tum-on time is negligible (tum-on is dominated by L5+LD)
Notes:
co Repetitive rating; pulse width limited by
max. junction temperature. (See fig. 11)
C) Starting Tu-- 25°C, L = 220pH
RG = 259, IAS-- 34A, VGS=10V (See Figure 12)
© ISD S 34A, di/dt S 120A/ps, VDD S V(sRVss,
T J f 175°C
© Pulse width S 400ps; duty cycle f 2%.
s This is a typical value at device destruction and represents
operation outside rated limits.
© This is a calculated value limited to To = 175°C .
