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IRL3102STRLPBF
20V Single N-Channel HEXFET Power MOSFET in a D2-Pak package
International
:raRliUctifier
PD- 95589
IRL3102SPbF
HEXFETO Power MOSFET
' Advanced Process Technology D
o Surface Mount VDSS = 20V
o Optimized for 4.5V-7.0V Gate Drive
o Ideal for CPI) Core DC-DC Converters RDS(on) = 00139
o Fast Switching
. Lead-Free s ID = 61 A
Description
These HEXFET Power MOSFEFS were designed
specifically to meet the demands of CPU core DC-DC
converters. Advanced processing techniques
combined with an optimized gate oxide design results
in a die sized specifically to offer maximum efficiency
at minimum cost.
The DZPak is a surface mount power package capable
ofaccommodating die sizes up to FliEX-4. It providesthe
highest power capability and the lowest possible on-
resistance in any existing surface mount package. The
D2Pak is suitable for high current applications because
of its low internal connection resistance and can
dissipate up to 2.0W in a typical surface mount
application.
Absolute Maximum Ratings
Parameter Max. Units
b Cl Tc = 25°C Continuous Drain Current, Vos C) 4.5V6) 61
b Cl TC = 100°C Continuous Drain Current, Vos it 4.5V® 39 A
bs, Pulsed Drain Current C06) 240
PD@TC = 25°C Power Dissipation 89 W
Linear Derating Factor 0.71 we
Veg Gate-to-Source Voltage , 10 V
Ess Single Pulse Avalanche Energy®© 220 m]
IAR Avalanche Current0) 35 A
EAR Repetitive Avalanche Energy0) 8.9 tn)
dv/dt Peak Diode Recovery dv/dt (5)3) 5.0 V/ns
Tu Operating Junction and -55 to + 150
Tsrs Storage Temperature Range "C
Soldering Temperature, for 10 seconds 300 (1.6mm from case )
Thermal Resistance
Parameter Typ. Max. Units
Rquc junction-to-Case - 1.4
Rap Junction-toAmbient ( PCB Mounted/stead/state)" - 40 TMI
1
07/20/04
IRL3102SPbF International
TOR Rectifier
Electrical Characteristics © To = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
V(BRDSS Drain-to-Source Breakdown Voltage 20 - - V Veg = 0V, ID = 250pA
DV(BR)D5$’DTJ Breakdown Voltage Temp. CoetMient .-- 0.016 - V/°C Reference to 25''C, ID = 1mA©
. . . - - 0.015 Veg = 4.5V. ID = 37A G)
R030“) Static Drain-to-Source On-Resistance - - 0.013 Q Ves = 7.0V. ID = 37A ©
VGS(th) Gate Threshold Voltage 0.70 - - V Ws = Ws, ID = 250pA
gts Forward Transconductance 36 - - S Ws = 16V, ID = 35AS
. - - 25 Ws = 20V, Veg = 0V
bss Draxn-toSource Leakage Current - - 250 pA Ws = 10V, Ves = ov, TJ = 150°C
Gate-to-Source Forward Leakage - - 100 Veg = 10V
less Gate-to-Source Reverse Leakage - - -100 nA Veg = -10V
Qg Total Gate Charge - - 58 ID = 35A
Qgs Gate-to-Source Charge - - 14 nC Ws = 16V
di Gate-to-Drain ("Miller") Charge - - 21 Veg = 4.5V, See Fig. 6 @CS)
tam) Turn-On DelayTime - 10 - Wry = 10V
tr Rise Time - 130 - ns ID = 35A
tdwm Tu rn-Off Delay Time - 80 - Rs = 9.0w, Veg = 4.5V
tr Fall Time - 110 - RD = 0.28w, ©©
Between lead,
LS Internal Source Inductance - 7.5 - nH and center of die contact
CISS Input Capacitance - 2500 - Veg = 0V
Coss Output Capacitance - 1000 - pF Ws = 15V
Cms Reverse Transfer Capacitance - 360 - f = 1.0MHz. See Fig. 5
Source-Drain Ratings and Characteristics
Parameter Min. Typ. Max. Units Conditions
Is Continuous Source Current - - 61 MOSFETsymboI D
(Body Diode) A showing the
ISM Pulsed Source Current - - 240 integral reverse G
(Body Diode) FO p-n junction diode. s
Vso Diode Forward Voltage - - 1.3 V T: = 25''C, ls = 37A, I/ss = 0V co
trr Reverse Recovery Time - 59 88 ns Tc = 25°C, IF = 35A
er Reverse Recovery Charge - 110 160 nC di/dt = 100/Vps C06)
ton Forward Turn-On Time Intrinsic tum-on time is negligible (turn-on is dominated by LS+LD)
Notes:
C) Repetitive rating; pulse width limited by Q u E 35A, di/dt 2 100/Vps, Voo E Vmvss,
max. junction temperature. T: 5 150°C
C) Starting T: = 25''C, L = 0.36mH C) Pulse width E 300ps; duty cycle E 2%.
Rs = 25N, us-- 35A. s Uses IRL3102 data ard test conditions
" When mounted on FR-4 board using minimum recommended footprint.
For recommended footprint and soldering techniques refer to application note #AN-994.
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