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IRL3102
20V Single N-Channel HEXFET Power MOSFET in a TO-220AB package
International
ISER Rectifier
PRELIMINARY
PD-9.1694A
IRL3102
HEXFET® Power MOSFET
0 Advanced Process Technology D
o Optimized for 4.5V-7.0V Gate Drive VDSS = 20V
o Ideal for CPU Core DC-DC Converters
o Fast Switching RDS(on) = 00139
Description -
These HEXFET Power MOSFETs were designed s ID - 61A
specifically to meet the demands of CPU core DC-DC
converters in the PC environment. Advanced
processing techniques combined with an optimized
gate oxide design results in a die sized specifically to
offer maximum efficiency at minimum cost.
The TO-220 acka e is universall referred for all
tldue,-r'ei1lf'/eiKuas'fr'it C,tri'2ltyioT, at power
dissipation levels to approximately 50 watts. The low
thermal resistance and low package cost of the TO-
220 contribute to its wide acceptance throughout the
industry.
TO-220AB
Absolute Maximum Ratings
Parameter Max Units
ID @ To = 25°C Continuous Drain Current, VGs @ 4.5V 61
ID @ TC = 100°C Continuous Drain Current, VGS @ 4.5V 39 A
IDM Pulsed Drain Current co 240
PD @Tc = 25°C Power Dissipation 89 W
Linear Derating Factor 0.71 W/°C
Ves Gate-to-Source Voltage k 10 V
VGSM Gate-to-Source Voltage 14 V
(Start Up Transient, tp = 100ps)
EAS Single Pulse Avalanche Energy© 220 m]
IAR Avalanche CurrentCD 35 A
EAR Repetitive Avalanche Energy00 8.9 mJ
dv/dt Peak Diode Recovery dv/dt © 5.0 V/ns
Tu Operating Junction and -55 to + 150
TSTG Storage Temperature Range "C
Soldering Temperature, for 10 seconds 300 (1.6mm from case )
Mounting torque, 6-32 or M3 srew 10 Ibf-in (1.1N-m)
Thermal Resistance
Parameter Typ. Max. Units
Rac Junction-to-Case - 1 .4
Recs Case-to-Sink, Flat, Greased Surface 0.50 - "C/W
ReJA Junction-to-Ambient - 62
11/18/97
|RL3102
International
TOR Rectifier
Electrical Characteristics @ Tu = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
V(BR)DSS Drain-to-Source Breakdown Voltage 20 - - V N/ss = 0V, ID = 250pA
AV(BR)DSS/ATJ Breakdown Voltage Temp. CoefMient - 0.016 - V/°C Reference to 25°C, ID = 1mA
. . . - - 0.015 VGS = 4.5V, ID = 37A (4)
RDS(on) Static Drain-to-Source On-Resistance - - 0.013 C2 VGS = 7.0V, ID = 37A CO
VGS(th) Gate Threshold Voltage 0.70 - - V 1hos = VGS, ID = 250pA
gm Forward Transconductance 36 - - S Vos = 16V, ID = 35A
loss Drain-to-Source Leakage Current - - 25 PA Vros = 20V, I/ss = 0V
- - 250 VDS = 10V, VGS = 0V, TJ = 150°C
Gate-to-Source Forward Leakage - - 100 VGs = 10V
IGSS Gate-to-Source Reverse Leakage - - -100 nA VGS = -10V
ck, Total Gate Charge - - 58 ID = 35A
Q95 Gate-to-Source Charge - - 14 nC Vos = 16V
di Gate-to-Drain ("Miller") Charge - - 21 I/ss = 4.5V, See Fig. 6 co
td(on) Turn-On Delay Time - 10 - VDD = 10V
tr Rise Time - 130 - ns ID = 35A
td(ott) Turn-Off Delay Time - 80 - RG = 9.09, I/ss = 4.5V
tf FaIITime - 110 - RD = 0.289, G)
. Between lead, D
LD Internal Drain Inductance - 4.5 - 6mm (0.25in.)
nH from package G )
Ls Internal Source Inductance - 7.5 - and center of die contact s
Ciss Input Capacitance - 2500 -- VGs = 0V
Coss Output Capacitance - 1000 - pF Ws = 15V
Crss Reverse Transfer Capacitance - 360 - f = 1.0MHz, See Fig. 5
Source-Drain Ratings and Characteristics
Parameter Min. Typ. Max. Units Conditions
ls Continuous Source Current - - 61 MOSFETsymbol D
(Body Diode) A showing the Lt
ISM Pulsed Source Current - - 240 integral reverse G (tLl
(Body Diode) C) p-n junction diode. s
VSD Diode Forward Voltage - - 1.3 V Tu = 25°C, ls = 37A, VGS = 0V ©
trr Reverse Recovery Time - 59 88 ns Tu = 25°C, IF = 35A
Qrr Reverse Recovery Charge - 110 160 nC di/dt = 100A/ps ©
ton Forward Turn-On Time Intrinsic turn-on time is negligible (tum-on is dominated by LS+LD)
Notes:
C) Repetitive rating; pulse width limited by
max. junction temperature.
C) Starting TJ = 25°C, L = 0.36mH
RG = 259, IAS = 35A.
TJS150°C
© ISD f 35A, di/dt f 100A/ps, VDD S V(BR)DSS,
GD Pulse width f 300ps; duty cycle 3 2%.
