IRL2910STRLPBF ,100V Single N-Channel HEXFET Power MOSFET in a D2-Pak packageapplications.Absolute Maximum RatingsParameter Max. UnitsI @ T = 25°C Continuous Drain Current, V @ ..
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of its low internal connection resistance and can
dissipate up to 2.0W in a ..
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IRL2910STRLPBF
100V Single N-Channel HEXFET Power MOSFET in a TO-262 package
International
TOR Rectifier
Logic-Level Gate Drive
Surface Mount
Advanced Process Technology
Ultra Low On-Resistance
Dynamic dv/dt Rating
Fast Switching
Fully Avalanche Rated
0 Lead-Free
Description
Fifth Generation HEXFETs from International Rectifier
utilize advanced processing techniques to achieve
extremely low on-resistance per silicon area. This
benefit, combined with the fast switching speed and
ruggedized device design that H EXFET Power MOSFETs
are well known for, providesthe designerwith an extremely
efficient and reliable device for use in a wide variety of
applications.
The D2Pak is a surface mount power package capable of
accommodating die sizes up to HEX-4. It provides the
PD - 95149
IRL2910S/LPbF
HEXFET6 Power MOSFET
VDSS = 100V
A RDS(on) = 0.0269
ID = 55A
highest power capability and the lowest possible on- D 2 Pak T0262
resistance in any existing surface mount package. The
D2Pak is suitable for high current applications because of
its low internal connection resistance and can dissipate up
to 2.0W in a typical surface mount application.
The through-hole version (IRL2910L) is available for low-
profile applications.
Absolute Maximum Ratings
Parameter Max. Units
ID @ To = 25°C Continuous Drain Current, Vas @ 10V© 55
ID @ To = 100°C Continuous Drain Current, Vas @ 10V© 39 A
IDM Pulsed Drain Current (D6) 190
PD @TA = 25°C Power Dissipation 3.8 W
PD @Tc = 25°C Power Dissipation 200 W
Linear Derating Factor 1.3 W/°C
I/es Gate-to-Source Voltage 1 16 V
EAS Single Pulse Avalanche Energy©© 520 mJ
IAR Avalanche Current0) 29 A
EAR Repetitive Avalanche Energy0) 2O mJ
dv/dt Peak Diode Recovery dv/dt SS 5.0 V/ns
To Operating Junction and -55 to + 175
TSTG Storage Temperature Range °C
Soldering Temperature, for 10 seconds 300 (1.6mm from case )
Thermal Resistance
Parameter Typ. Max. Units
Fkuc Junction-to-Case - 0.75 0
Ram Junction-to-Ambient ( PCB Mounted,steady-state)** - 40 C/W
04/19/04
IRL2910S/LPbF
International
TOR Rectifier
Electrical Characteristics © Tg = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
V(Bmpss Drain-to-Source Breakdown Voltage 100 - - V Vas = 0V, ID = 250pA
AV(BR,DSS/ATJ Breakdown Voltage Temp. Coefficient - 0.12 - V/°C Reference to 25°C, ID = 1mA©
- - 0.026 Vss = 10V, ID = 29A GD
Roam) Static Drain-to-Source On-Resistance - - O.030 g Vss = 5.0V, ID = 29A co
- - 0.040 VGs = 4.0V, ID = 24A @
VGS(th) Gate Threshold Voltage 1.0 - 2.0 V Vos = Vas, ID = 250pA
gfs Forward Transconductance 28 - - S Vos = 50V, ID = 29A©
. - - 25 Vos = 100V, l/ss = 0V
'Dss Drain-to-Source Leakage Current - - 250 HA Vos = 80V, VGS = 0V, To = 150°C
less Gate-to-Source Forward Leakage - - 100 n A VGS = 16V
Gate-to-Source Reverse Leakage - - -1OO l/tss = -16V
Qg Total Gate Charge - - 140 ID = 29A
095 Gate-to-Source Charge - - 20 nC Vos = 80V
di Gate-to-Drain ("Miller") Charge - - 81 Vas = 5.0V, See Fig. 6 and 13 ©©
tdwn) Turn-On Delay Time - 11 - l/oo = 50V
t, Rise Time - 100 - ns ID = 29A
tum) Turn-Off Delay Time - 49 - Rs = IAQ, l/ss = 5.0V
tf Fall Time 55 RD =1.7§2,See Fig. 10 ©©
LS Internal Source Inductance _ 7.5 _ Between lead,
nH and center of die contact
Ciss Input Capacitance - 3700 - Vas = 0V
Cass Output Capacitance - 630 - pF Vos = 25V
Crss Reverse Transfer Capacitance - 330 - f = 1.0MHz, See Fig. 5©
Source-Drain Ratings and Characteristics
Parameter Min. Typ. Max. Units Conditions
Is Continuous Source Current - - 55 MOSFET symbol D
(Body Diode) A showing the
ISM Pulsed Source Current integral reverse G
(Body Diode) C)6) - - 190 p-n junction diode. s
VSD Diode Forward Voltage - - 1.3 V TJ = 25°C, ls = 29A, VGS = 0V ©
trr Reverse Recovery Time - 240 350 ns Tu = 25°C, IF = 29A
Qrr Reverse RecoveryCharge - 1.8 2.7 pC di/dt = 100A/ps © (9
ton Forward Turn-On Time Intrinsic tum-on time is negligible (tum-on is dominated by LS+LD)
Notes:
C) Repetitive rating; pulse width limited by
max. junction temperature. ( See fig. 11 )
© VDD = 25V, starting TJ = 25°C, L = 1.2mH
Re = 259, lAs = 29A. (See Figure 12)
© ISD S 29A, di/dt S 490Alps, VDD S V(BR)DSSI
T JS 175°C
** When mounted on 1" square PCB ( FR-4 or G-10 Material ).
For recommended footprint and soldering techniques refer to application note #AN-994.
co Pulse width S 300ps; duty cycle 5 2%.
s Uses IRL2910 data and test conditions
