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IRL2910-IRL2910PBF
100V Single N-Channel HEXFET Power MOSFET in a TO-220AB package
PD - 91375B
IRL2910
HEXFET© Power MOSFET
International
Tart, Rectifier
Logic-Level Gate Drive
Advanced Process Technology
Ultra Low On-Resistance
Dynamic dv/dt Rating
175°C Operating Temperature G
Fast Switching
q Fully Avalanche Rated s
Description
Fifth Generation HEXFETs from International Rectifier
utilize advanced processing techniques to achieve
extremely low on-resistance per silicon area. This
benefit, combined with the fast switching speed and
ruggedized device design that HEXFET Power MOSFETs
are well known for, provides the designerwith an extremely
efficient and reliable device for use in a wide variety of
applications.
D VDSS = 100V
" RDS(on) = 0.026Q
ID = 55A
The TO-220 package is universally preferred for all
commercial-industrial applications at power dissipation
levels to approximately 50 watts. The low thermal TO-220AB
resistance and low package cost of the TO-220 contribute
to its wide acceptance throughout the industry.
Absolute Maximum Ratings
Parameter Max. Units
ID @ Tc = 25°C Continuous Drain Current, VGS @ 10V 55
ID @ Tc = 100°C Continuous Drain Current, Vss @ 10V 39 A
IDM Pulsed Drain Current 0) 190
Po @Tc = 25°C Power Dissipation 200 W
Linear Derating Factor 1.3 W/°C
VGS Gate-to-Source Voltage , 16 V
EAS Single Pulse Avalanche Energy© 520 mJ
IAR Avalanche CurrentC)S 29 A
EAR Repetitive Avalanche Energy0) 20 mJ
dv/dt Peak Diode Recovery dv/dt © 5.0 V/ns
Tu Operating Junction and -55 to + 175
TSTG Storage Temperature Range "C
Soldering Temperature, for 10 seconds 300 (1.6mm from case )
Mounting torque, 6-32 or M3 srew 10 Ibf-in (1.1 N-m)
Thermal Resistance
Parameter Typ. Max. Units
Rsuc Junction-to-Case - 0.75 "C/VV
Recs Case-to-Sink, Flat, Greased Surface 0.50 - ''CA/V
ReJA Junction-to-Ambient - 62 "C/W
5/13/98
IRL2910
International
TOR Rectifier
Electrical Characteristics @ T J = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
V(BR)DSS Drain-to-Source Breakdown Voltage 100 - - V VGS = 0V, ID = 250PA
AV(BR)DSSIATJ Breakdown Voltage Temp. Coemcient - 0.12 - V/°C Reference to 25°C, ID = 1mA
- - 0.026 VGS =10N/,ID = 29A ©
RDS(on) Static Drain-to-Source On-Resistance _ - 0.030 Q I/cs = 5.0V, ID = 29A ©
- - 0.040 VGS = 4.0V, ID = 24A co
Vegan) Gate Threshold Voltage 1.0 - 2.0 V Vros = VGs, ID = 250pA
9ts Forward Transconductance 28 - - S Vros = 50V, ID = 29A
. - - 25 I/rss = 100V, VGS = 0V
loss Drain-to-Source Leakage Current _ - 250 HA VDs = 80V, VGs = 0V, T: = 150°C
less Gate-to-Source Forward Leakage - - 100 n A l/ss = 16V
Gate-to-Source Reverse Leakage - - -100 VGs = -16V
q, Total Gate Charge - - 140 ID = 29A
Qgs Gate-to-Source Charge - - 20 nC Ws = 80V
di Gate-to-Drain ("Miller") Charge - - 81 I/ss = 5.0V, See Fig. 6 and 13 C4)
tdwn) Turn-On Delay Time - 11 - VDD = 50V
tr Rise Time - 100 - ns ID = 29A
td(off) Turn-Off Delay Time - 49 - RG = 1.49, VGS = 5.0V
tf Fall Time 55 RD = 1.79, See Fig. 10 ©
. Between lead, D
u, Internal Drain Inductance - 4.5 - 6mm (0.25in.) E )
Ls Internal Source Inductance - 7.5 --.- nH from package . G
and center of die contact s
Ciss Input Capacitance - 3700 - VGS = 0V
Coss Output Capacitance - 630 - pF Vos = 25V
Crss Reverse Transfer Capacitance - 330 - f = 1.0MHz, See Fig. 5
Source-Drain Ratings and Characteristics
Parameter Min. Typ. Max. Units Conditions
ls Continuous Source Current MOSFET symbol D
(Body Diode) - - 55 A showing the
ISM Pulsed Source Current integral reverse G
(Body Diode) C) - - 190 p-n junction diode. s
I/sro Diode Forward Voltage - - 1.3 V To = 25°C, Is = 29A, VGS = 0V ©
trr Reverse Recovery Time - 240 350 ns To = 25°C, IF = 29A
G, Reverse RecoveryCharge - 1.8 2.7 pC di/dt = 100A/ps G)
ton Forward Turn-On Time Intrinsic tum-on time is negligible (tum-on is dominated by Ls+LD)
Notes:
co Repetitive rating; pulse width limited by
max. junction temperature. (See fig. 11 )
© VDD= 25V, starting To = 25°C, L = 1.2mH
RG = 259, IAS= 29A. (See Figure 12)
© Isro 3 29A, di/dt s 490Alps, VDD S V(BRpss.
T J s: 175°C
© Pulse width S 300ps; duty cycle 3 2%.
