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IRL2703STRLPBF
30V Single N-Channel HEXFET Power MOSFET in a D2-Pak package
International
:raRIectifier
PD- 95586
IRL2703SPbF
HEXFETW Power MOSFET
o Logic-Level Gate Drive D
o Advanged Process Technology Voss = 30V
. Dynamic dv/dt Rating
o 175°C Operating Temperature G RDs(on, = 0.04:2
q Fast Switching
q Fully Avalanche Rated s 'D = 24A
. Lead-Free
Description
Fifth Generation HEXFETs from International Rectifier
utilize advanced processing techniques to achieve the
lowest possible oo-resistance persilicon area. This benefit,
combined with the fast switching speed and ruggedized
device design that HEXFET Power MOSFETS are well
known tor, provides the designer with an extremely efficient
device for use in a wide variety of applications.
The D2PAK is a surface mount power package capable of
accommodating die sizes up to HEX-4. It provides the
highest power capability and the lowest possible on-
resistance in any existing surface mount package. The
DZPAK is suitable1or high current applications because of
its low internal connection resistance and can dissipate up
to 2.0W in a typical surface mount application.
Absolute Maximum Ratings
' Parameter Max. Units
b e TC = 25'0 Continuous Drain Current. Vss (t 10VIS 24
b (t Tc =100=C Continuous Drain Current. V63 tt 10V 17 A
[W Pulsed Drain Current c, 96
P0 @TC = 25% Power Dissipation 45 W
Linear Derating Factor 0.30 W/'0
hr, Gate-to-Source Voltage :16 V
Exs Single Pulse Avalanche Energy 'i) S 77 ml
Lu: Avalanche Current@ M A
EAR Repetitive Avalanche Energy$ 4.5 m,)
dv/dt Peak Diode Recovery dv/dt Ci') S, 3.5 V/ns
T J Operating Junction and -55 to + 175
Tsms Storage Temperature Range ''0
Soldering Temperature, for IO seconds 300 (1.6mm from case)
Thermal Resistance
Parameter Min. Typ. Max. Units
ch Junction-to-Case - - 3.3 'O/W
Rm Junction-to-Ambient (PCB Mount.steady-state)" - - 40
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07/20/04
IRL2703SPbF International
TOR Rectifier
Electrical Characteristics (ii) To = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
V(BR)DSS Drain-to-Source Breakdown Voltage 30 - - V Veg = OV, ID = 250uA
AV(BR)Dss/ATJ Breakdown Voltage Temp. CoetMient - 0.030 - V/°C Reference to 25''C, ID = 1mA6)
R St . . . - - 0.040 n Veg =10V, b =14A G)
DS(on) atlc (yain4tySthrce Cn-Resistance - - 0.060 Ves = VN, lo = 12A (4)
Vssith) Gate Threshold Voltage 1.0 - - V l/cs = Vos, b = 250pA
gt, Forward Transconductance 6.4 - - S Vos = 25V, ID =14AO)
loss Drain-toSource Leakage Current --.- - 25 PA l/cs = 30V, Vss = 0V
- - 250 VDS = 24V, Vos = OV, T: = 150''C
Csss Gate-to-Source Forward Leakage - - 100 n A Veg = 16V
Gate-tty-Source Reverse Leakage - - -100 Vss = -16V
A Total Gate Charge - - 15 ID = 14A
As Gate-to-Source Charge - - 4.6 nC l Vos = 24V
' Gate-to-Drain ("Miller") Charge - - 9.3 l/ss = 4.5V. See Fig. 6 and 13 @CS)
tam) Tum-On Delay Time - 8.5 - VDD = 15V
tr Rise Time - 140 - ns l ID =14A
tam) Turn-Off Delay Time - 12 - l Rs = 12n, Vss = 4.5V
t, Fall Time - 20 - Ro =1.0Q See Fig, 10 ©©
Between lead,
Ls Internal Source Inductance - 7.5 - nH _
and center of die contact
Ciss Input Capacitance 450 Vss = 0V
Coss Output Capacitance - 210 - pF l I/cs = 25V
Crss Reverse Transfer Capacitance - 110 - l f = 1.0MHz, See Fig. "
Source-Drain Ratings and Characteristics
Parameter Min. Typ. Max. Units Conditions
Is Continuous Source Current . _ - 24 MOSFET symbol D
(Body Diode) A showmg the
lsu Pulsed Source Current _ - - 96 integral reverse G
(Body Diode) CO p-n Junction diode. s
VSD Diode Forward Voltage - - 1.3 V T: = 25''C, ls = 14A, Vss = 0V (l)
tn Reverse Recovery Time - 65 97 ns T: = 25''C, IF = 14A
Q, Reverse RecoveryCharge .r.-r.r.. 140 210 nC di/dt = 100/Vps "
ton Forward Turn-On Time Intrinsic tum-on time is negligible (tum-an is dominated by LS+LD)
Notes:
C) Repet1tive rating: pulse width limited by (39 Iso CMA, di/dt S140A/HS.VDD s Vissvss,
max. junction temperature. ( See M. 11 ) TJS 175°C
C) Voo = IW, starting Tu = 25''C, L = 570pH @ Pulse width E 300ps; duty cycle E 2%.
Rs = 259. IAS =14A. (See Figure 12) co Uses IRL2703 data and test conditions.
** When mounted on 1" square PCB ( FR-4 or G-10 Material ).
For recommended footprint and soldering techniques refer to application note #AN-994.
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