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IRL2703S-IRL2703STRL
30V Single N-Channel HEXFET Power MOSFET in a D2-Pak package
International PD-9.1360
Titat Rectifier PRELIMINARY IRL2703S
HEXFET© Power MOSFET
o Logic-Level Gate Drive
0 Advanced Process Technology D
o Dynamic dv/dt Rating VDSS = 30V
o 175°C Operating Temperature _
o Fast Switching G H- A RDS(on) = 0.049
0 Fully Avalanche Rated
ID = 24A
Description s
Fifth Generation HEXFETs from International Rectiher
utilize advanced processing techniques to achieve the
lowest possible on-resistance persilicon area. This benefit,
combined with the fast switching speed and ruggedized
device design that HEXFET Power MOSFETs are well
known for, provides the designer with an extremely efficient
device for use in a wide variety of applications.
The D2PAK is a surface mount power package capable of
accommodating die sizes up to HEX-4. It provides the
highest power capability and the lowest possible on-
resistance in any existing surface mount package. The
D2PAK is suitable for high current applications because of
its low internal connection resistance and can dissipate up
to 2.0W in a typical surface mount application.
Absolute Maximum Ratings
Parameter Max. Units
ID @ Tc = 25°C Continuous Drain Current, I/ss @ 10VS 24
ID @ Tc = 100°C Continuous Drain Current, VGS @ 10VS 17 A
IDM Pulsed Drain Current OD 96
Pro @Tc = 25°C Power Dissipation 45 W
Linear Derating Factor 0.30 W/°C
I/ss Gate-to-Source Voltage :16 V
EAS Single Pulse Avalanche Energy ©OD 77 mJ
IAR Avalanche CurrentC0 14 A
EAR Repetitive Avalanche Energy0) 4.5 mJ
dv/dt Peak Diode Recovery dv/dt ss 3.5 V/ns
TJ Operating Junction and -55 to + 175
TSTG Storage Temperature Range ''C
Soldering Temperature, for 10 seconds 300 (1.6mm from case)
Thermal Resistance
Parameter Min. Typ. Max. Units
ReJC Junction-to-Case - - 3.3 °C/W
ReJA Junction-to-Ambient (PCB Mount,steady-state)** - - 40
11/18/96
IRL2703S International
TOR Recfifier
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
V(BR)DSS Drain-to-Source Breakdown Voltage 30 - - V VGS = 0V, ID = 250pA
AV(BR)DSS/ATJ Breakdown Voltage Temp. Coefficient - 0.030 - V/°C Reference to 25°C, ID = 1mA©
RDS(on) Static Drain-to-Source On-Resistance T, T, 88:8 Q IC, =" 19;}33; 1142,12)
Vegan) Gate Threshold Voltage 1.0 - - V VDs = VGS, lo = 250pA
git Forward Transconductance 6.4 - - S VDS = 25V, ID = 14AS
loss Drain-to-Source Leakage Current - - 25 pA VDS = 30V, VGS = 0V
- - 250 VDs = 24V, VGS = 0V, Tu = 150°C
less Gate-to-Source Forward Leakage - - 100 n A VGS = 16V
Gate-to-Source Reverse Leakage - - -100 VGS = -16V
Qg Total Gate Charge - - 15 ID = 14A
Qgs Gate-to-Source Charge - - 4.6 nC VDS = 24V
di Gate-to-Drain ("Miller") Charge - - 9.3 VGs = 4.5V, See Fig. 6 and 13 cos
td(0n) Turn-On Delay Time - 8.5 - VDD = 15V
tr Rise Time - 140 - ns ID = 14A
td(off) Turn-Off Delay Time - 12 - Rs = 129, VGS = 4.5V
tf Fall Time - 20 - RD = 1.0n, See Fig. 10 coco
Between lead,
Ls Internal Source Inductance - 7.5 - nH and center of die contact
Ciss Input Capacitance 450 VGs = 0V
Cass Output Capacitance - 210 - pF VDs = 25V
Crss Reverse Transfer Capacitance - 110 - f = 1.0MHz, See Fig. 5S
Source-Drain Ratings and Characteristics
Parameter Min. Typ. Max. Units Conditions
Is _ Continuous Source Current _ - - 24 MOSFET symbol D
(Body Diode) A showmg the L-a--,,
ISM . Pulsed Source Current . - - 96 integral reverse G E
(Body Diode) C) p-n junction diode. s
Vso Diode Forward Voltage - - 1.3 V TJ = 25°C, ls = 14A, l/ss = 0V G)
trr Reverse Recovery Time - 65 97 ns To = 25°C, IF = 14A
er Reverse RecoveryCharge - 140 210 nC di/dt = 100A/ps ©G)
ton Forward Turn-On Time Intrinsic turn-on time is negligible (tum-on is dominated by LS+LD)
Notes:
C) Repetitive rating; pulse width limited by © Isro S 14A, di/dt S 140A/ps, VDD S V(BR)DSS,
max. junction temperature. ( See fig. 11 ) Tos: 175°C
© VDD = 15V, starting To = 25°C, L = 570pH © Pulse width 3 300ps; duty cycles 2%.
Rs = 250, IAs = 14A. (See Figure 12) s Uses IRL2703 data and test conditions.
** When mounted on l" square PCB ( FR-4 or G-10 Material ).
For recommended footprint and soldering techniques refer to application note #AN-994.
