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IRL2703PBF
30V Single N-Channel HEXFET Power MOSFET in a TO-220AB package
IRL2703PbF
HEXFET*) Power MOSFET
International
Tart, Rectifier
Logic-Level Gate Drive
Advanced Process Technology
Dynamic dv/dt Rating
175°C Operating Temperature
Fast Switching
Fully Avalanche Rated
. Lead-Free
Description
Fifth Generation HEXFETs from International Rectifier
utilize advanced processing techniques to achieve the
lowestpossible on-resistance persiliconarea. This benefit,
combined with the fast switching speed and ruggedized
device design that HEXFET Power MOSFETs are well
known for, providesthe designerwith an extremely efficient
device for use in a wide variety of applications.
VDSS = 30V
RDS(on) = 0.049
ID = 24A
The TO-220 package is universally preferred for all
commerciaI-industrial applications at power dissipation
levelstoapproximately50watts. The lowthermal resistance
and low package cost of the TO-220 contribute to its wide
acceptance throughout the industry.
Absolute Maximum Ratings
Parameter Max.
TO-220AB
ID C) Tc = 25°C
Continuous Drain Current, Vss Cl 10V 24
b Cl TC =100''C
Continuous Drain Current, V63 Cl 10V
Pulsed Drain Current CO
PD @Tc = 25°C
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy C)
Avalanche Current©
Repetitive Avalanche Energy®
Peak Diode Recovery dv/dt ©
Operating Junction and
Storage Temperature Range
-55 to + 175
Soldering Temperature, for 10 seconds
300 (1.6mm from ca
Mounting torque, 6-32 or M3 screw.
10 lbf-in (1,1N-m)
Thermal Resistance
Parameter
Junction-to-Case
Case-to-Sink, Flat, Greased Surface
1 ''C/W
Junction-to-Ambient
6/17/04
IRL2703PbF International
TOR Rectifier
Electrical Characteristics @ TJ = 25''C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
V(Bppsg Drain-to-Source Breakdown Voltage 30 - - V Vss = OV, lo = 250uA
AwBRmss/ATJ Breakdown Voltage Temp. Coefficient - 0.030 - NCC Reference to 25''C, ID = 1mA
' . . - - 0.040 Q Veg =10V, lo = 14A G)
RDS10n) Static Drah-ttrStNrce on-Resistance - - 0.060 l/ss = 4, 5V, ID = 12A ©
Vsam) Gate Threshold Voltage 1.0 - - V Ws = Veg, ID = 250PA
ge Forward Transconductance 6.4 - - S l/cs = 25V, lo = 14A
loss Drain-toSource Leakage Current - - 25 PA Vos = 30V, Vss = 0V
--- - 250 Vos = 24V, Ws = OV, Tu = 150°C
less Gate-to-Source Forward Leakage - - 100 n A l/ss = 16V
Gate-tty-Source Reverse Leakage - - -100 Veg = -16V
Qg Total Gate Charge - - 15 b = 14A
Qgs Gate-toSource Charge - - 4.6 nC 1 Vos = 24V
di Gate-toDrain ("Miller") Charge - - 9.3 Veg = 4.5V, See Fig. 6 and 13 (f)
tdwn) Turn-On Delay Time - 8.5 - VDD = 15V
' Rise Time - 140 - ns 1 ID =14A
thott) Turn-Off Delay Time - 12 - 1 Rs = 129, Vss =4.5V
t, Fall Time - 20 - Ro = 1.02 See Fig. 10 Q4)
. Between lead, C)
k Internal Drain Inductance - 4.5 - 1 6mm (0.25in.) £3
Ls Internal Source lnductance - 7.5 - 1 from package .
and center of die contact 9
CISS Input Capacitance - 450 - Veg = 0V
Coss Output Capacitance - 210 - pF 1 Vos = 25V
Crss Reverse Transfer Capacitance - 110 - 1 f = 1.0MHz, See Fig. 5
Source-Drain Ratings and Characteristics
Parameter Min. Typ. Max. Units Conditions
Is Continuous Source Current MOSFET symbol J
(Body Diode) - - 24 A showing the
bu Pulsed Source Current - - 96 integral reverse C)
(Body Diode) (O p-n junction diode. s
V30 Diode Forward Voltage - - 1.3 V T: = 25''C, ls = 14A, l/ss = 0V 0)
1” Reverse Recovery Time - 65 97 ns T: = 25t'C, V =14A
er Reverse RecoveryCharge - 140 210 nC di/dt = 100A/ps®
ton Forward Turn-On Time lntn'nsic turn-on time is negligible (turn-on is dominated by LS+LD)
Notes:
C) Repetitive rating; pulse width limited by Q ISC) s 14A, di/dt f MONUS' VDD s: Verve,
max. junction temperature, ( See flg. 11 ) Tcs 175°C
© VDD = 15V, starting Tu = 25°C, L = 570PH (9 Pulse width f 300ps; duty cycle E 2%.
Rs = 259. IAS =14A.(See Figure 12)
2
