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IRL2703
30V Single N-Channel HEXFET Power MOSFET in a TO-220AB package
International
Titat, Rectifier
PD - 9.1359A
IRL2703
Logic-Level Gate Drive
Advanced Process Technology
Dynamic dv/dt Rating
175°C Operating Temperature
Fast Switching
Fully Avalanche Rated
Description
Fifth Generation HEXFETs from International Rectifier
utilize advanced processing techniques to achieve the
lowest possible on-resistance persilicon area. This benefit,
combined with the fast switching speed and ruggedized
device design that HEXFET Power MOSFETs are well
known for, provides the designer with an extremely efficient
device for use in a wide variety of applications.
The TO-220 package is universally preferred for all
commercial-industrial applications at power dissipation
levels to approximately 50 watts. The lowthermal resistance
and low package cost of the TO-220 contribute to its wide
acceptance throughout the industry.
Absolute Maximum Ratings
HEXFET® Power MOSFET
VDSS = 30V
RDS(on) = 0.049
ID = 24A
TO-220AB
Parameter
ID @ Tc = 25°C
Continuous Drain Current, I/ss @ 10V
ID @ TC =100°C
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current co
PD @Tc = 25°C
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy ©
Avalanche Current©
Repetitive Avalanche EnergyCD
Peak Diode Recovery dv/dt ©
Operating Junction and
Storage Temperature Range
-55 to + 175
Soldering Temperature, for 10 seconds
300 (1.6mm from case)
Mounting torque, 6-32 or M3 screw.
10 Ibf-in (1.1N-m)
Thermal Resistance
Parameter
Junction-to-Case
Case-to-Sink, Flat, Greased Surface
Junction-to-Ambient
8/27/97
I RL2703 International
TOR Rectifier
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
V(BR)DSS Drain-to-Source Breakdown Voltage 30 - - V VGS = 0V, ID = 250pA
AV(BR)DSS/ATJ Breakdown Voltage Temp. Coefficient - 0.030 - V/°C Reference to 25°C, ID = 1mA
RDS(on) Static Drain-to-Source On-Resistance T, T, 88:8 Q IC, =" 19;}33; 1142,12)
Vegan) Gate Threshold Voltage 1.0 - - V VDs = VGS, lo = 250pA
git Forward Transconductance 6.4 - - S VDS = 25V, ID = 14A
loss Drain-to-Source Leakage Current - - 25 pA VDS = 30V, VGS = 0V
- - 250 VDs = 24V, VGS = 0V, Tu = 150°C
less Gate-to-Source Forward Leakage - - 100 n A VGS = 16V
Gate-to-Source Reverse Leakage - - -100 VGS = -16V
Qg Total Gate Charge - - 15 ID = 14A
Qgs Gate-to-Source Charge - - 4.6 nC VDS = 24V
di Gate-to-Drain ("Miller") Charge - - 9.3 VGs = 4.5V, See Fig. 6 and 13 co
td(0n) Turn-On Delay Time - 8.5 - VDD = 15V
tr Rise Time - 140 - ns ID = 14A
td(off) Turn-Off Delay Time - 12 - Rs = 129, Ves =4.5V
tf Fall Time - 20 - RD = 1.09, See Fig. 10 CO
LD Internal Drain Inductance - 4.5 - t',t,"Cr."2e)' D
nH from package G )
LS Internal Source Inductance - 7.5 - .
and center of die contact s
Ciss Input Capacitance - 450 - I/ss = 0V
Coss Output Capacitance - 210 - pF VDS = 25V
Crss Reverse Transfer Capacitance - 110 - f = 1.0MHz, See Fig. 5
Source-Drain Ratings and Characteristics
Parameter Min. Typ. Max. Units Conditions
Is Continuous Source Current - - 24 MOSFET symbol D
(Body Diode) A showing the L,-a-:
ISM Pulsed Source Current - - 96 integral reverse G (rl-u,
(Body Diode) C) p-n junction diode. s
VSD Diode Forward Voltage - - 1.3 V Tu = 25°C, ls = 14A, VGS = 0V Cl)
tn Reverse Recovery Time - 65 97 ns TJ = 25°C, IF = 14A
er Reverse RecoveryCharge - 140 210 nC di/dt = 100A/ps (ii)
ton Forward Turn-On Time Intrinsic tum-on time is negligible (tum-on is dominated by LS+LD)
Notes:
C) Repetitive rating; pulse width limited by © Isro f 14A, di/dt S 140A/ps, V00 3 V(BR)ross,
max. junction temperature. ( See fig. 11 ) TJS 175°C
© VDD = 15V, starting Tu = 25°C, L = 570pH GD Pulse width 3 300ps; duty cycle 5 2%.
Rs = 259, lAs = 14A. (See Figure 12)
