IRL2505S ,55V Single N-Channel HEXFET Power MOSFET in a D2-Pak packagePD - 91326DIRL2505S/L®HEXFET Power MOSFETl Logic-Level Gate Drivel Advanced Process TechnologyDV = ..
IRL2703 ,30V Single N-Channel HEXFET Power MOSFET in a TO-220AB packageapplications at power dissipationTO-220ABlevels to approximately 50 watts. The low thermal resista ..
IRL2703PBF ,30V Single N-Channel HEXFET Power MOSFET in a TO-220AB packageapplications at power dissipation
levelstoapproximately50vvatts. The Iowthermal resistance T0-220A ..
IRL2703S ,30V Single N-Channel HEXFET Power MOSFET in a D2-Pak packageapplications because ofDits low internal connection resistance and can dissipate upto 2.0W in a typ ..
IRL2703STRL ,30V Single N-Channel HEXFET Power MOSFET in a D2-Pak packagePD - 9.1360IRL2703SPRELIMINARY®HEXFET Power MOSFETl Logic-Level Gate DriveDl Advanced Process Techn ..
IRL2703STRLPBF ,30V Single N-Channel HEXFET Power MOSFET in a D2-Pak packageapplications
The DEPAK .s a surtat:e mounl power package capable cl
accommodatirng die slzes up ..
ISP321-1 , HIGH DENSITY MOUNTING PHOTOTRANSISTOR OPTICALLY COUPLED ISOLATORS
ISP321-1 , HIGH DENSITY MOUNTING PHOTOTRANSISTOR OPTICALLY COUPLED ISOLATORS
ISP521-4 , HIGH DENSITY MOUNTING PHOTOTRANSISTOR OPTICALLY COUPLED ISOLATORS
ISP742RI , Smart Power High-Side-Switch for Industrial Applications
ISP742RI , Smart Power High-Side-Switch for Industrial Applications
ISP752R , Smart Power High-Side-Switch for Industrial Applications
IRL2505L-IRL2505S
55V Single N-Channel HEXFET Power MOSFET in a TO-262 package
IRL2505S/L
HEXFET® Power MOSFET
PD - 91326DAdvanced Process TechnologySurface Mount (IRL2505S)Low-profile through-hole (IRL2505L)175°C Operating TemperatureFast SwitchingFully Avalanche Rated
ParameterTyp.Max.UnitsRθJCJunction-to-Case–––0.75
RθJAJunction-to-Ambient ( PCB Mounted,steady-state)**–––40
Thermal Resistance°C/W
ParameterMax.UnitsID @ TC = 25°CContinuous Drain Current, VGS @ 10V… 104†
ID @ TC = 100°CContinuous Drain Current, VGS @ 10V…74A
IDMPulsed Drain Current …360
PD @TA = 25°CPower Dissipation3.8W
PD @TC = 25°CPower Dissipation200W
Linear Derating Factor1.3W/°C
VGSGate-to-Source Voltage ±16V
EASSingle Pulse Avalanche Energy‚…500mJ
IARAvalanche Current54A
EARRepetitive Avalanche Energy20mJ
dv/dtPeak Diode Recovery dv/dt ƒ…5.0V/nsOperating Junction and-55 to + 175
TSTGStorage Temperature Range
Soldering Temperature, for 10 seconds300 (1.6mm from case )
Absolute Maximum RatingsFifth Generation HEXFETs from International Rectifier
utilize advanced processing techniques to achieve
extremely low on-resistance per silicon area. This
benefit, combined with the fast switching speed and
ruggedized device design that HEXFET Power MOSFETs
are well known for, provides the designer with an extremely
efficient and reliable device for use in a wide variety of
applications.
The D2Pak is a surface mount power package capable of
accommodating die sizes up to HEX-4. It provides the
highest power capability and the lowest possible on-
resistance in any existing surface mount package. The
D2Pak is suitable for high current applications because of
its low internal connection resistance and can dissipate
up to 2.0W in a typical surface mount application.
The through-hole version (IRL2505L) is available for low-
profile applications.
DescriptionVDSS = 55V
RDS(on) = 0.008Ω
ID = 104A† D Pak
TO-262
5/12/98Logic-Level Gate Drive
IRL2505S/L
† Caculated continuous current based on maximum allowable
junction temperature;for recommended current-handling of the
package refer to Design Tip # 93-4
ParameterMin.Typ.Max.Units Conditions
V(BR)DSSDrain-to-Source Breakdown Voltage55––––––VVGS = 0V, ID = 250μA
ΔV(BR)DSS/ΔTJBreakdown Voltage Temp. Coefficient––– 0.035–––V/°CReference to 25°C, ID = 1mA…
–––––– 0.008VGS = 10V, ID = 54A „
–––––– 0.010ΩVGS = 5.0V, ID = 54A „
–––––– 0.013VGS = 4.0V, ID = 45A „
VGS(th)Gate Threshold Voltage1.0–––2.0VVDS = VGS, ID = 250μA
gfsForward Transconductance59––––––SVDS = 25V, ID = 54A…
––––––25VDS = 55V, VGS = 0V
––––––250VDS = 44V, VGS = 0V, TJ = 150°C
Gate-to-Source Forward Leakage––––––100nAVGS = 16V
Gate-to-Source Reverse Leakage––––––-100VGS = -16VTotal Gate Charge––––––130ID = 54A
QgsGate-to-Source Charge––––––25nCVDS = 44V
QgdGate-to-Drain ("Miller") Charge––––––67VGS = 5.0V, See Fig. 6 and 13 „…
td(on)Turn-On Delay Time–––12–––VDD = 28VRise Time–––160–––ID = 54A
td(off)Turn-Off Delay Time–––43–––RG = 1.3Ω, VGS = 5.0VFall Time–––84–––RD = 0.50Ω, See Fig. 10 „…
Between lead,––––––and center of die contact
CissInput Capacitance–––5000–––VGS = 0V
CossOutput Capacitance–––1100–––pFVDS = 25V
CrssReverse Transfer Capacitance–––390–––ƒ = 1.0MHz, See Fig. 5…
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)RDS(on)Static Drain-to-Source On-ResistanceInternal Source Inductance7.5
IDSSDrain-to-Source Leakage CurrentμA
ParameterMin.Typ.Max.Units ConditionsContinuous Source CurrentMOSFET symbol
(Body Diode)––––––showing the
ISMPulsed Source Currentintegral reverse
(Body Diode) ––––––p-n junction diode.
VSDDiode Forward Voltage––––––1.3VTJ = 25°C, IS = 54A, VGS = 0V „
trrReverse Recovery Time–––140210nsTJ = 25°C, IF = 54A
QrrReverse Recovery Charge–––650970nCdi/dt = 100A/μs „…
tonForward Turn-On TimeIntrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Source-Drain Ratings and CharacteristicsA
104†
„ Pulse width ≤ 300μs; duty cycle ≤ 2%.
Notes:… Uses IRL2505 data and test conditions
** When mounted on 1" square PCB ( FR-4 or G-10 Material ).
For recommended footprint and soldering techniques refer to application note #AN-994.ISD ≤ 54A, di/dt ≤ 230A/μs, VDD ≤ V(BR)DSS,
TJ ≤ 175°C
‚ VDD = 25V, starting TJ = 25°C, L = 240μH
RG = 25Ω, IAS = 54A. (See Figure 12) Repetitive rating; pulse width limited by
max. junction temperature. ( See fig. 11 )
IGSS
IRL2505S/L
Fig 1. Typical Output Characteristics
Fig 3. Typical Transfer CharacteristicsFig 4. Normalized On-ResistanceVs. Temperature
Fig 2. Typical Output Characteristics-60-40-20020406080100120140160180T , Junction Temperature (°C)
, D
-to
(on)
V = 10V GSA
I = 90AD
I , D
t (
V , Drain-to-Source Voltage (V)DS
20μs PULSE WIDTH
T = 25°CJ
VGS
TOP 15V
12V
10V
8.0V
6.0V
4.0V
3.0V
BOTTOM 2.5V2.5V
I ,
Dr
e Cur
V , Drain-to-Source Voltage (V)DS
20μs PULSE WIDTH
T = 175°C
VGS TOP 15V
12V 10V 8.0V
6.0V 4.0V
3.0V BOTTOM 2.5V2.5V
T = 25°CJV , Gate-to-Source Voltage (V)
I
T = 175°CJ
V = 25V
20μs PULSE WIDTH
IRL2505S/L
Fig 7. Typical Source-Drain Diode Forward Voltage
Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage
Fig 8. Maximum Safe Operating Area
Fig 6. Typical Gate Charge Vs. Gate-to-Source Voltage
CapV , Drain-to-Source Voltage (V)
V = 0V, f = 1MHz
C = C + C , C SHORTED
C = C
C = C + C
iss gs gd ds
rss gd
oss ds gdissossrss4080120160200
Q , Total Gate Charge (nC)G
, G
lta
FOR TEST CIRCUIT
SEE FIGURE 13
I = 54A
V = 44V
V = 28V
T = 25°CJ
V = 0V GS
V , Source-to-Drain Voltage (V)
I , R
t (
T = 175°CJ
V , Drain-to-Source Voltage (V)DS
I , D
t (
OPERATION IN THIS AREA LIMITED
BY R
DS(on)
10μs
100μs
1ms
10ms
T = 25°C
T = 175°C
Single Pulse
IRL2505S/L
Fig 9. Maximum Drain Current Vs. Case Temperature
Fig 10a. Switching Time Test CircuitVDS
90%
10%
VGS
td(on)trtd(off)tf
Fig 10b. Switching Time Waveforms
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-CasePulse Width ≤ 1 μs
Duty Factor ≤ 0.1 %
VGS
D.U.T.
5.0V-VDD5075100125150175
T , Case Temperature( C)
I , Drain Current (A)C
LIMITED BY PACKAGE
0.000010.00010.0010.010.1 1
Notes:
1. Duty factor D =t / t
2. Peak T=Px Z+ T2DMthJCC
t , Rectangular Pulse Duration (sec)
Thermal Response
(Z )
thJC
D = 0.50
SINGLE PULSE
(THERMAL RESPONSE)
IRL2505S/L
Fig 12a. Unclamped Inductive Test Circuit
Fig 12b. Unclamped Inductive Waveforms
Fig 13a. Basic Gate Charge WaveformVDS
D.U.T.
VDD
IAS0.01Ω+
VDS
IAS
VDD
V(BR)DSS
10 V
D.U.T.VDSIG
3mA
VGS
.3μF
50KΩ
.2μF12V
CurrentRegulator
SameTypeasD.U.T.
CurrentSamplingResistors
Fig 13b. Gate Charge Test CircuitG
QGSQGDG
Charge
10 V
Fig 12c. Maximum Avalanche Energy Vs. Drain Current
, S
Starting T , Junction Temperature (°C)
V = 25V
I
TOP 22A
38A
BOTTOM 54A
