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IRL2505
55V Single N-Channel HEXFET Power MOSFET in a TO-220AB package
International
:raRlectifier
Logic-Level Gate Drive
Advanced Process Technology
Ultra Low On-Resistance
Dynamic dv/dt Rating
175°C Operating Temperature
Fast Switching
Fully Avalanche Rated
Description
Fifth Generation HEXFETs from International Rectiherutilize
advanced processing techniques to achieve extremely low
on-resistance persilicon area. This benefit, combined with
the fast switching speed and ruggedized device design that
HEXFET Power MOSFETs are well known for, provides the
designerwith an extremely effcient and reliable device for
use in a wide variety of applications.
The TO-220 is universally preferred for all commercial-
Industrial applications at power dissipation levels to
approximately 50 watts. The low thermal resistance and
low package cost of the TO-220 contribute to its wide
acceptance throughout the industry.
Absolute Maximum Ratings
PD - 91325C
IRL2505
HEXFET0 Power MOSFET
D VDSS = 55V
RDS(on) = 0.008n
ID =104A©
TO-220AB
Parameter
Max. Units
ID @ Tc = 25°C
Continuous Drain Current, VGS @ 10V
ID @ TC = 100°C
Continuous Drain Current, Ves @ 10V
Pulsed Drain Current co
Pro @Tc = 25°C
Power Dissipation
Linear Derating Factor
1.3 W/°C
Gate-to-Source Voltage
Single Pulse Avalanche Energy©
500 mJ
Avalanche Current co
Repetitive Avalanche Energy©
Peak Diode Recovery dv/dt ©
5.0 V/ns
Operating Junction and
Storage Temperature Range
55 to + 175
Soldering Temperature, for 10 seconds
Mounting torque, 6-32 or M3 srew IO lbf-in (1.1N-m)
Thermal Resistance
300 (1.6mm from case )
Parameter Typ. Max. Units
ReJC Junction-to-Case - 0.75
Recs Case-to-Sink, Flat, Greased Surface 0.50 - ''C/W
ReJA Juction-to-Ambient - 62
1
11/19/01
IRL2505
International
TOR Rectifier
Electrical Characteristics @ T J = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
V(BR)DSS Drain-to-Source Breakdown Voltage 55 - - V I/ss = 0V, ID = 250uA
AV(BR)Dss/ATJ Breakdown Voltage Temp. Coemcient - 0.035 - V/t Reference to 25°C, ID = 1mA
- - 0.008 VGS = 10V, ID = 54A ©
Rrosom Static Drain-to-Source On-Resistance - _ 0.010 Q VGS = 5.0V, Io = 54A ©
- - 0.013 VGS = 4.0V, lo = 45A (D
VGS(th) Gate Threshold Voltage 1.0 - 2.0 V Vros = N/ss, ID = 250pA
gts Forward Transconductance 59 - - S Vros = 25V, ID = 54A
. - - 25 I/os = 55V, VGS = 0V
loss Drain-to-Source Leakage Current - - 2 50 pA Vros = 44V, VGS = 0V, To = 150°C
less Gate-to-Source Forward Leakage - - 100 nA VGS = 16V
Gate-to-Source Reverse Leakage - - -100 VGS = -16V
043 Total Gate Charge - - 130 ID = 54A
093 Gate-to-Source Charge - - 25 nC Ws = 44V
di Gate-to-Drain ("Miller") Charge - - 67 l/GS = 5.0V, See Fig. 6 and 13 (D
tam Turn-On Delay Time - 12 - VDD = 28V
tr RiseTime - 160 - ns [D = 54A
td(0ff) Turn-Off Delay Time - 43 - Rs = 1.39, Vss = 5.0V
tr FaIITime 84 RD = 0.509, See Fig. 10 ©
Ls Internal Source Inductance - 7.5 - nH Between lead, .
and center of die contact
Ciss Input Capacitance - 5000 - VGs = 0V
Coss Output Capacitance - 1100 - pF Vros = 25V
Crss Reverse Transfer Capacitance - 390 - f = 1.0MHz, See Fig. 5
Source-Drain Ratings and Characteristics
Parameter Min. Typ. Max. Units Conditions
b Continuous Source Current MOSFETsymbol D
(Body Diode) - - 1046) A showing the
ISM Pulsed Source Current integral reverse G
(Body Diode) co - - 360 p-n junction diode. s
Vso Diode Forward Voltage - - 1.3 V TJ = 25°C, Is = 54A, Vss = 0V ©
trr Reverse Recovery Time - 140 210 ns TJ = 25°C, IF = 54A
Qrr Reverse Recovery Charge - 650 970 nC di/dt = 100A/ps ©
ton Forward Turn-On Time Intrinsic tum-on time is negligible (tum-on is dominated by LS+LD)
Notes:
OD Repetitive rating; pulse width limited by
max. junction temperature. ( See fig. 11 )
© VDD = 25V, starting TJ = 25°C, L = 240pH
Rs = 259, IAS = 54A. (See Figure 12)
© ISD S 54A, di/dt S 230A/ps, VDD S V(BR)DSS:
TJs175°C
© Pulse width I 300ps; duty cycle s: 2%.
s Calculated continuous current based on maximum allowable
junction temperature;for recommended current-handling of the
package refer to Design Tip # 93-4
