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IRL2203NSTRLPBF-IRL2203NSTRRPBF
30V Single N-Channel HEXFET Power MOSFET in a TO-262 package
International
TOR Rectifier
Advanced Process Technology
Ultra Low On-Resistance
PD - 95219A
IF1L2203NSPbF
lFlL2203NLPbF
H EXFET© Power MOSFET
Dynamic dv/dt Rating
175°C Operating Temperature
Fast Switching
Fully Avalanche Rated
100% Re Tested G
Lead-Free
Description
VDSS = 30V
RDS(0n) = 7.0mQ
ID =116A©
Advanced HEXFET6 Power MOSFETs from International Rectifier
utilize advanced processing techniques to achieve extremely low on-
resistance persilicon area. This benefit, combined with the fast switching
speed and ruggedized device design that HEXFET power MOSFETs
are well known for, provides the designer with an extremely efficient and
reliable device for use in a wide variety of applications.
The D2Pak is a surface mount power package capable of accommodating
die sizes up to HEX-4. It provides the highest power capability and the lowest
possible on-resistance in any existing surface mount package. The D2Pak
is suitable for high currentapplications because of its low internal connection
resistance and can dissipate up to 2.0W in a typical surface mount application.
Thethrough-hole version (IRL2203NL) is availableforlow-profile applications.
Absolute Maximum Ratings
TO-262
IRL2203NSPbF IRL2203NLPbF
Symbol Parameter Max Units
ID © Tc = 25°C Continuous Drain Current, l/ss © 10V 116 (D
ID © TC = 100°C Continuous Drain Current, VGS @ 10V 82 A
'DM Pulsed Dram Current LO 400
PD OT, = 25°C Power Dissipation 3.8 W
PD @TC = 25°C Power Dissipation 180 W
Linear Derating Factor 1.2 W/°C
vss Gate-to-Source Voltage t 16 V
|AR Avalanche Current LO 60 A
E AR Repetitive Avalanche Energy (D 18 m J
dv/dt Peak Diode Recovery dv/dt © 5.0 V/ns
TJ Operating Junction and -55 to + 175 D
Storage Temperature Range C
TSTG Soldering Temperature, for 10 seconds 300 (1 .6mm from case)
Thermal Resistance
Symbol Parameter Typ Max Units
ReJC Junction-to-Case © _ 0.85
RNA Junction-to-Ambient (PCB mount, steady state) CG) - 40 oC/W
1
10/01/10
03NS/LPbF
International
Electrical Characteristics @ T J = 25°C (unless otherwise specified) TOR Rectifier
Symbol Parameter Min Typ Max Units Conditions
V(BR)DSS Drain-to-Source Breakdown Voltage 30 - - V Vas = 0V, ID = 250pA
AV(BF1)DSS/ATJ Breakdown Voltage Temp. Coefficient - 0.029 - V/°C Reference to 25°C, ID = 1mA
Rosm Static Drain-to-Source On-Resistance - - 7.0 Vss = 10V, ID = 60A (9
- - 1O l/ss = 4.5V, ID = 48A (9
Vesoh) Gate Threshold Voltage 1.0 - 3.0 V Vos = Vss, ID = 250pA
gfs Forward Transconductance 73 - - S Vos = 25V, ID = 60A co
loss Drain-to-Source Leakage Current - - 25 Vos = 30V, I/as = 0V
- - 250 pA Vos = 24V, I/os = OV, T, = 125°C
less Gate-to-Source Forward Leakage - - 100 Vss = 16V
Gate-to-Source Reverse Leakage - - -100 nA Vss = -16V
Qg Total Gate Charge - - 60 ID = 60A
095 Gate-to-Source Charge - - 14 nC Vos = 24V
di Gate-to-Drain ("Miller") Charge - - 33 Vss = 4.5V, See Fig. 6 and 13
Re Gate Resistance 0.2 - 3.0 Q
td(on) Turn-On Delay Time - 11 - Vor, = 15V
t, Rise Time - 160 - ID = 60A
td(off) Turn-Off Delay Time .- 23 - Rs = 1.89
h Fall Time - 66 - I/ss = 4.5V, See Fig. 10 G)
u, Internal Drain Inductance - 4.5 - Between lead,
Nh 6mm (0.25in.)
Ls Internal Source Inductance - 7.5 - from package
and center of die contact
Ciss Input Capacitance - 3290 - Vss = 0V
Cass Output Capacitance - 1270 - pF Vos = 25V
Crss Reverse Transfer Capacitance - 170 - f = 1.0MHz, See Fig. 5
EAS Single Pulse Avalanche Energy C) - 1320 © 290 © mJ [AS = 60A, L = 0.16mH
Source-Drain Ratings and Characteristics
Symbol Parameter Min Typ Max Units Conditions
ls Continuous Source Current 11 © MOSFET symbol D
(Body Diode) 6 A showing the
ISM Pulsed Source Current integral reverse (3
(Body Diode) co 400 p-n junction diode. a
V3.) Diode Forward Voltage - - 1.2 V TJ = 25°C, Is = 60A, VGS = 0V (9
trr Reverse Recovery Time - 56 84 ns To = 25°C, IF = 60A
Qrr Reverse Recovery Charge - 110 170 nC di/dt = 100A/ps ©
ton Forward Turn-On Time Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Notes:
s This is a typical value at device destruction and represents
C) Repetitive rating; pulse width limited by
max. junction temperature. ( See fig. 11 )
© Starting To = 25°C, L = 0.16mH Rs = 259,
Us = 60A, VGS=1OV (See Figure 12)
© ISD S 60A, di/dt S 110A/ps, VDD S V(BR)DSS,
Tu s: 175°C
(9 Pulse width 3 400ps; duty cycle S 2%.
operation outside rated limits.
co This is a calculated value limited to To = 175°C .
C) Calculated continuous current based on maximum allowable
junction temperature. Package limitation current is 75A.
When mounted on 1" square PCB (FR-4 or G-10 Material). For
recommended footprint and soldering techniques refer to
application note #AN-994.
© Ro is measured at To approximately 90°C
